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{{cc-nanolab}}
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Nickel click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Nickel click here]'''


'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
'''All links to Labmanager Including APV and QC requires login.'''


== Nickel deposition ==
== Nickel deposition ==
Nickel can be deposited by e-beam evaporation, sputtering or electroplating. In the chart below you can compare the different deposition equipment.
Nickel can be deposited by e-beam evaporation or sputtering at DTU Nanolab. For electroplating you will have to contact other institutes at DTU, e.g., DTU Mechanical Engineering.  
 
*[[/Electroplating of nickel|Electroplating of nickel]]
*[[/Stress Wordentec Ni films|Stress in Wordentec Ni films: study here]].


Some process information is available here for e-beam evaporated films:
<!--*[[/Electroplating of nickel|Electroplating of nickel]]-->
*[[/Stress Wordentec Ni films|Stress in e-beam evaporated Ni films: study here]] ''(from the now decommissioned Wordentec deposition tool - basic trends in results should be transferable to other e-beam evaporators).''


In the chart below you can compare the different deposition equipment:


{| border="1" cellspacing="0" cellpadding="3"  
{| border="1" cellspacing="0" cellpadding="3"  
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Ni|Electroplating-Ni]])
|-  
|-  


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! General description
! General description
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|Sputter deposition of Nickel
|Sputter deposition of Nickel
|Sputter deposition of Nickel
|Sputter deposition of Nickel
|Electroplating of Nickel
|-
|-


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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|Ar ion bombardment
|Ar ion etch (only in E-beam evaporator Temescal)
|
|
|RF Ar clean
|RF Ar clean
|RF Ar clean
|None
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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! Layer thickness
! Layer thickness
|10 Å to 1 µm *
|10 Å to 1 µm *
|10 Å to 1 µm *
|10 Å to 500 nm **
|10 Å to 5000 Å **
|10 Å to 500 nm **
|10 Å to 5000 Å **
|~ 20 µm to ~ 1000 µm
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"


! Deposition rate
! Deposition rate
|2-10 Å/s
|1-10 Å/s
|10-15 Å/s
|Depends on process parameters, about 1 Å/s  
|Depends on process parameters, about 1 Å/s  
|Depends on process parameters, at least ~ 4 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|Depends on process parameters, at least ~ 4 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|~ 10-250 Å/s


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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*Up to 3x8" wafers (ask for holder)
*Up to 3x8" wafers (ask for holder)
*Many smaller pieces
*Many smaller pieces
|
*24x2" wafers or
*6x4" wafers or
*6x6" wafers
|
|
* Pieces or
* Pieces or
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*Up to 10x4" or 6" wafers
*Up to 10x4" or 6" wafers
*Many smaller pieces
*Many smaller pieces
|
*1x2" wafer or
*1x4" wafer or
*1x6" wafer


|-
|-
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|
|
* Silicon
*Almost any that does not degas at your intended substrate temperature. See also the [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
*Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
|
* Silicon
* Almost any that do not degas. See also the [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=244 cross-contamination sheet]
* Silicon oxide
* Silicon nitride
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
|
|
* Almost any that do not outgas.
*Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
|
 
*Almost any that do not outgas. Check the cross-contamination sheet in Labmanager.
|
Base materials:<br>
*Silicon
*Polymers with Tg > 75°C
*Metals (bulk)
*Cross-linked or hard baked resists supported by one of the above mentioned materials
Seed metals:<br>
* NiV (75 - 100 nm recommended)
* Ti (~5 nm) + Au (75-100 nm recommended)
* Cr (~5 nm) + Au (75-100 nm recommended)
* TiW
* Cr
|-
|-
|-
|-
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! Comment
! Comment
|
|
|
*[[/Stress Wordentec Ni films|Stress in Wordentec Ni films: study here]].
|
|
*May use high-strength magnet for deposition.  
*May use high-strength magnet for deposition.  
|
|
*May use high-strength magnet for deposition
*May use high-strength magnet for deposition
|
*Sample must be compatible with plating bath (pH = 3,65 and T = 52°C). Seed metal necessary.
|-
|-


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==Quality control of e-beam evaporated Ni films==
==Quality control of e-beam evaporated Ni films==
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality control (QC) for Wordentec'''
|bgcolor="#98FB98" |'''Quality control (QC) for the E-beam Evaporator (Temescal) and the E-beam Evaporator (10-pockets)'''
|-
|-
|
|
*[http://labmanager.dtu.dk/d4Show.php?id=3736&mach=167 QC procedure for Wordentec in labmanager]<br>
Nickel deposition is tested occasionally, around 1 time per year in each machine. You are welcome to contact staff to request an extra test of the material.  
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=167 The newest QC data for Wordentec in labmanager]<br>


{| {{table}}
'''LabManager links to procedures and data''' (require login):
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"


! QC Recipe:
*[http://labmanager.dtu.dk/d4Show.php?id=5862&mach=429 QC procedure for the E-beam Evaporator (Temescal)]<br>
! Process 5
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=429 The newest QC data for the E-beam Evaporator (Temescal)]<br>
|-
|Deposition rate
|10 Å/s
|-
|Thickness
|100 nm
|-
|Pressure
|Below 4*10<sup>-6</sup> mbar
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:440px"
!QC limits
!Wordentec
|-
|Measured average thickness (Å)
|± 10 %
|-
|Lowest accepted deposition rate (Å/s)
|6 Å/s
|-
|}
|-
|}
Thickness is measured in 5 points with a stylus profiler.
|}


*[http://labmanager.dtu.dk/d4Show.php?id=5862&mach=511 QC procedure for the E-beam Evaporator (10-pockets)]<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=511 The newest QC data for the E-beam Evaporator (10-pockets)]<br>


{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality control (QC) for the Temescal'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5862&mach=429 QC procedure for the Temescal in labmanager]<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=429 The newest QC data for the Temescal in labmanager]<br>


{| {{table}}
{| {{table}}
| align="center" |  
| align="left" valign="top"|
{| border="1" cellspacing="1" cellpadding="2" align="center" style="width:400px"
{| border="2" cellspacing="1" cellpadding="2" align="left" style="width:400px"
 
! QC Recipe:
! QC Recipe:
! Standard recipes/Ni  
! Standard recipes/Ni  
|-  
|-  
|Deposition rate
|Deposition rate
|10 Å/s
|2 Å/s
|-
|-
|Thickness
|Thickness
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|-
|-
|}
|}
| align="center" valign="top"|
|-
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:440px"
|}
 
 
{| {{table}}
| align="left" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="left" style="width:400px"
!QC limits
!QC limits
!Temescal
!Both E-beam Evaporators
|-
|-
|Deposition rate deviation
|Deposition rate deviation
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|-
|-
|}
|}
Thickness is measured in 5 points with a stylus profiler. <br>
 
Additionally we examine the newly deposited films for particles using the particle scanner (if available, otherwise we use the Jenatech microscope in darkfield mode) and we monitor the sheet resistance of the Ti/Au films.
Thickness is measured in 5 points with a stylus profiler (usually DektakXT). <br>
|}
|}

Latest revision as of 23:56, 7 July 2025

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

Feedback to this page: click here


Nickel deposition

Nickel can be deposited by e-beam evaporation or sputtering at DTU Nanolab. For electroplating you will have to contact other institutes at DTU, e.g., DTU Mechanical Engineering.

Some process information is available here for e-beam evaporated films:

In the chart below you can compare the different deposition equipment:

E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Nickel Sputter deposition of Nickel Sputter deposition of Nickel
Pre-clean Ar ion etch (only in E-beam evaporator Temescal) RF Ar clean
Layer thickness 10 Å to 1 µm * 10 Å to 500 nm ** 10 Å to 500 nm **
Deposition rate 1-10 Å/s Depends on process parameters, about 1 Å/s Depends on process parameters, at least ~ 4 Å/s, see conditions here
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • Many smaller pieces
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed materials
  • Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for PC1 and PC3
Comment
  • May use high-strength magnet for deposition.
  • May use high-strength magnet for deposition

* To deposit a cumulative thickness above 600 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine


** To deposit a cumulative thickness above 200 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine

Quality control of e-beam evaporated Ni films

Quality control (QC) for the E-beam Evaporator (Temescal) and the E-beam Evaporator (10-pockets)

Nickel deposition is tested occasionally, around 1 time per year in each machine. You are welcome to contact staff to request an extra test of the material.

LabManager links to procedures and data (require login):


QC Recipe: Standard recipes/Ni
Deposition rate 2 Å/s
Thickness 100 nm
Pressure Below 1*10-6 mbar


QC limits Both E-beam Evaporators
Deposition rate deviation ± 20 %
Measured average thickness ± 10 %
Thickness deviation across a 4" wafer ± 5 %

Thickness is measured in 5 points with a stylus profiler (usually DektakXT).

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