Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions
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!style="background:silver; color:black" align="center"|Performance | !style="background:silver; color:black" align="center"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |style="background:LightGrey; color:black"|Film thickness and quality||style="background:WhiteSmoke; color:black"| | ||
*Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide) | *Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide) | ||
*Wet oxide: ~ 0 nm - 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers) | *Wet oxide: ~ 0 nm - 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers) | ||
* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/A1 furnace break-down voltage measurement results|Break-down voltage measurement results]] | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
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*1 atm (no vacuum) | *1 atm (no vacuum) | ||
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|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Gases on the system | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*N<sub>2</sub> | *N<sub>2</sub> | ||