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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Descum click here]'''
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[[Category: Equipment |Lithography descum]]
[[Category: Equipment|Lithography descum]]
[[Category: Lithography|Descum]]
[[Category: Lithography|Descum]]


==Descum results==
__TOC__
 
=Plasma asher 1=
[[image:Descum Results aug 2019.png|right|frame|400x400px| Descum results plasma asher 1. September 2019]]
 
'''The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager].'''
 
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.
 


'''Recipe 1:'''<br>
= Descum Comparison Table =
Note: Plasma asher was cold before use
{| class="wikitable"
*O2 flow: 70 ml/min
*N2 flow: 70 ml/min
*Power: 150 W
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="left"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 5 || 7 || 10 || 10 
|-
|'''Etched Thickness (nm)'''|| 14.2 || 16.3 || 47.6 || 123.2 || 854.3 || 862.1
|-
|-
|}
!
|}
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
 
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher 4|Plasma Asher 4 (Clean)]]
 
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
'''Recipe 2:'''<br>
Note: Plasma asher was cold before use
*O2 flow: 500 ml/min
*N2 flow: 0 ml/min
*Power: 500 W
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="left"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 5 || 7 || 10 || 10 
|-
|'''Etched Thickness (nm)'''||  || 8.1 || 32.9 || 271.1 || 495.6 || 446.2
|-
|-
|}
! scope=row style="text-align: left;" | Purpose
|}
| Resist descum
 
|
 
*Resist stripping
==Descum tests on various resists==
*Resist descum
''Conny Hjort & Jesper Hanberg, September 2019''
|
 
*Resist stripping
[[image:PA1_descum.jpg|right|frameless|400x400px| Different resist descum results plasma asher 1. August 2021]]
*Resist descum
 
Descum of different resists, AZ5214E, AZ701 MiR and AZ2020 nLOF, on a single 100mm wafer was tested. Wafer was placed vertically in the middle of glass carrier.
Recipe setting was the same as in previous test in September 2019: 70ml/min O2, 70 ml/min N2, power 150W, different ashing time 1, 2, 3, 5 and 7 min run. Plasma Asher was cold before use, we observed minor temperature rise during processing, but not more than 5 degrees. Starting chambers pressure was around 0, 5 mbar.
 
'''1,5 um AZ5214E resist'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
|-
|'''Etched Thickness (nm)'''|| 6,28 || 102,99 || 76,92 || N/A || N/A
|-
|-
|}
! scope=row style="text-align: left;" | Method
|}
| Plasma ashing
 
| Plasma ashing
'''1,5 um AZ5214E resist placed horizontally in the carrier'''
| Plasma ashing
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
|-
|'''Etched Thickness (nm)'''|| 63,03 || 143,32 || 304,29  || 372,59 || N/A
|-
|-
|}
! scope=row style="text-align: left;" | Process gasses
|}
| O<sub>2</sub> (50 sccm)
 
|
'''1,5 um AZ701MiR resist'''
*O<sub>2</sub> (0-500 sccm)
{| {{table}}
*N<sub>2</sub> (0-500 sccm)
| align="center" |  
|
{| border="1" cellspacing="1" cellpadding="2"  align="center"
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
|- style="background:LightGrey"
*CF<sub>4</sub> (0-200 sccm)
|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
|-  
|'''Etched Thickness (nm)'''|| 268,88 || 199,54 || 219,03 || 200,86 || 292,15
|-
|-
|}
! scope=row style="text-align: left;" | Process power
|}
| 10-100 W (10-100%)
 
| 150-1000 W
'''1,5 um AZ 2020nLOF resist'''
| 150-1000 W
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
|-  
|'''Etched Thickness (nm)'''|| 1,68 || 76,51 || 169,72 || 481,96 || 272,59
|-
|-
|}
! scope=row style="text-align: left;" | Substrate batch
|}
|
<br clear="all" />
*Chips: several
 
*50 mm wafer: several
===[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_2 Plasma asher 2]===
*100 mm wafer: 1
[[image:descum_graf.jpg|right|frame|355x355px|Descum results plasma asher 2 - recipe 1]]
|
 
*Chips: several
Descum of AZ  Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.
*50 mm wafer: several
 
*100 mm wafer: 1-25
Experiment parameters:
*150 mm wafer: 1-25
{| {{table}}
*200 mm wafer: 1-25
| align="center" |
|
{| border="1" cellspacing="1" cellpadding="2"  align="center"
*Chips: several
|- style="background:LightGrey"
*50 mm wafer: several
| ||O2 flow|| N2 flow || Power
*100 mm wafer: 1-25
|-  
*150 mm wafer: 1-25
|'''recipe 1''' || 100 || 100 || 150
*200 mm wafer: 1-25
|-
|'''recipe 2''' || 500 || 0 || 200
|-
|-
|}
! scope=row style="text-align: left;" | Substrate materials
|}
|
 
*<span style="color:red">'''No polymer substrates'''</span><br>
 
*Silicon substrates
 
*III-V substrates
'''recipe 1'''
*Glass substrates
{| {{table}}
*Films, or patterned films, of any material except type IV (Pb, Te)
| align="center" |  
|
{| border="1" cellspacing="1" cellpadding="2"  align="center"
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
|- style="background:LightGrey"
*<span style="color:red">'''No III-V materials'''</span><br>
|'''Ashing time (min)'''|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20
*Silicon substrates
|-  
*Glass substrates
|'''Etched Thickness (nm)'''|| 8,7 || 5,1 || 12,5 || 6,2 || 31,8 || 86,0 || 25,7 || 46,8 || 38,3 || 49,7 || 59,4 || 140,1 || 360,7
*Polymer substrates
|-
*Films, or patterned films, of resists/polymers
|'''Initial temperature (°C)'''|| 28 || 21 || 31 || 21 || 22 || 28 || 25 || 24 || 21 || 24 || 24 || 22 || 22
|
|-
*Silicon substrates
|}
*III-V substrates
|}
*Glass substrates
 
*Polymer substrates
 
*Films, or patterned films, of any material except type IV (Pb, Te)
 
[[image:graf_descum-recipe2.png|right|frame|355x355px|Descum results plasma asher 2 - recipe 2]]
 
'''recipe 2'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1 ||2 ||3 ||4 ||5 ||6 ||7 ||8 ||10 ||12 ||15 ||20
|-
|'''Etched Thickness (nm)'''||8,1 ||9,4 ||16,8 ||55,2 ||44,0 ||47,5 ||42,5 ||55,1 ||85,3 ||122,4 ||184,8 ||305,9
|-  
|'''Initial temperature (°C)'''||22 ||21 ||21 ||22 ||22 ||22 ||21 ||21 ||20 ||21 ||21 ||22
|-
|}
|}
 
We can observe linear dependance of etched material on time after etching 7 minutes and more (recipe 2).
 
 
Jitka Urbánková & Jesper Hanberg
December 2019
 
<br clear="all" />
 
===[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_3: Plasma asher 3]===
 
Plasma Asher 3 is specially used for control descum process after lithography. Please notice that you only can process one 4 inch wafer or one small sampel at a time.
Machine is equipped with 2 gaslines: oxygen and nitrogen, but all tests run with oxygen as recommended by Diener.
 
'''Ashing of AZ MiR701 resist'''
 
You can use different strategy planing your descum: you can change power settings or you can vary chamber pressure during descum.
 
''Testing different power settings''
 
[[image:AZMIR701_power_settings.png|right|frame|400x400px| Descum results for different power settings]]
 
Recipe settings:
Kept oxygen and pressure settings constant at Oxygen: 5 sccm under process; Pressure: 0,2mbar and vary power.
 
Experiment parameters:
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Power
|-
|'''recipe 1''' || 50/0 || 52/31 || 50%
|-
|'''recipe 2''' || 100/0 || 53/31 || 100%
|-
|'''recipe 3''' || 20/0 || 51/34 || 20%
|-
|}
|}
|}
<br clear="all" />
<br clear="all" />


''Testing different pressure settings''
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher03}}


Recipe settings:
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher04}}
Kept power setting constant at Power: 100% and vary oxygen flow during process.


[[image:AZMIR701_pressure_settings.png|right|frame|400x400px| Descum results for different pressure settings]]
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher05}}


=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


Experiment parameters:
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 5 || 0,2
|-
|'''recipe 2''' || 100/0 || 37/38 || 45 || 0,8
|-
|}
|}


<br clear="all" />


'''Ashing of AZ5214E resist'''
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>


[[image:AZ5214E_pressure_settings.png|right|frame|400x400px| Descum results for different pressure settings]]
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
 
Recipe settings:
Kept power setting constant at Power: 100% and vary oxygen flow during process.
 
 
Experiment parameters:
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 17 || 0,4
|-
|'''recipe 2''' || 100/0 || 37/39 || 45 || 0,8
|-
|}
|}
<br clear="all" />
<br clear="all" />
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