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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Resist/UVresist click here]'''
==UV resist comparison table==
==UV resist comparison table==
Comparison of specifications and feature space of UV photoresists.
Comparison of specifications and feature space of the standard UV photoresists available at DTU Nanolab.


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{| class="wikitable"  
|-
|-
 
! scope=row| Resist
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/5214E|AZ 5214E]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/MiR|AZ MiR 701]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/nLOF|AZ nLOF 2020]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/4562|AZ 4562]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/SU-8|SU-8]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/TIspray|TI Spray]]
|-
|-
|-style="background:silver; color:black"
! scope=row| Resist tone
!Resist
|  
|'''[[Specific_Process_Knowledge/Lithography/5214E|AZ 5214E]]'''
*Positive
|'''[[Specific_Process_Knowledge/Lithography/MiR|AZ MiR 701]]'''
*Negative (image reversal)
|'''[[Specific_Process_Knowledge/Lithography/nLOF|AZ nLOF 2020]]'''
| Positive
|'''[[Specific_Process_Knowledge/Lithography/4562|AZ 4562]]'''
| Negative
|'''[[Specific_Process_Knowledge/Lithography/SU-8|SU-8]]'''
| Positive
|-
| Negative
 
|  
|-
|-style="background:WhiteSmoke; color:black"
!Resist tone
|
*Positive
*Positive
*Negative (image reversal)
*Negative (image reversal)
|Positive
|Negative
|Positive
|Negative
|-
|-
! scope=row| Thickness range
| 1.5 - 4.2 µm || 1.5 - 4 µm || 1.5 - 4 µm  || 5 - 10 µm || 1 - 200 µm || 0.5 - 5 µm
|-
! scope=row| Coating tool
|
Automatic spin coaters:
*Spin coater: Gamma UV lithography
*Spin coater: Gamma E-beam & UV


|-style="background:silver; color:black"
Manual spin coaters:
!Thickness range
* Spin coater: Labspin 02
|1.5 - 4.2 µm
* Spin coater: Labspin 03
|1.5 - 4 µm
* Spin coater: RCD8
|1.5 - 4 µm
|5 - 10 µm
|1 - 200 µm
|-


|-
Spray coater
|-style="background:WhiteSmoke; color:black"
|  
!Coating tool
Automatic spin coaters:
|
Automatic coaters:<br>
*Spin coater: Gamma UV lithography
*Spin coater: Gamma UV lithography
*Spin coater: Gamma ebeam & UV
*Spin coater: Gamma E-beam & UV  


Manual coaters:<br>
Manual spin coaters:
*Spin coater: Labspin 2
* Spin coater: Labspin 02
*Spin coater: Labspin 3
* Spin coater: Labspin 03
*Spin coater: RCD8
* Spin coater: RCD8
*Spray coater
 
|
Spray coater
Automatic coaters:<br>
|  
Automatic spin coaters:
*Spin coater: Gamma UV lithography
*Spin coater: Gamma UV lithography
*Spin coater: Gamma ebeam & UV


Manual coaters:<br>
Manual spin coaters:
*Spin coater: Labspin 2
* Spin coater: Labspin 02
*Spin coater: Labspin 3
* Spin coater: Labspin 03
*Spin coater: RCD8
* Spin coater: RCD8
*Spray coater
|
Automatic coaters:<br>
*Spin coater: Gamma UV lithography


Manual coaters:<br>
Spray coater
*Spin coater: Labspin 2
|  
*Spin coater: Labspin 3
Automatic spin coaters:
*Spin coater: RCD8
*Spin coater: Gamma E-beam & UV  
*Spray coater
|
Automatic coaters:<br>
*Spin coater: Gamma ebeam & UV


Manual coaters:<br>
Manual spin coaters:
*Spin coater: Labspin 2
* Spin coater: Labspin 02
*Spin coater: Labspin 3
* Spin coater: Labspin 03
*Spin coater: RCD8
* Spin coater: RCD8
|
|  
Manual coaters:<br>
Manual spin coaters:
*Spin coater: RCD8
* Spin coater: Labspin 02
* Spin coater: Labspin 03
* Spin coater: RCD8
|
Spray coater
|-
|-
 
! scope=row| Spectral sensitivity
| 310 - 420 nm || 310 - 445 nm || 310 - 380 nm || 310 - 445 nm || 300 - 375 nm || 310 - 440 nm
|-
|-
|-style="background:Silver; color:black"
! scope=row| Exposure tool
!Spectral sensitivity
|
|310 - 420 nm
* Maskless aligners
|310 - 445 nm
* Mask aligners
|310 - 380 nm
|  
|310 - 445 nm
* Maskless aligners
|300 - 375 nm
* Mask aligners
|  
* Maskless aligners
* Mask aligners
|  
* Maskless aligners
* Mask aligners
|  
* Maskless aligners
* Mask aligners
|  
* Maskless aligners
* Mask aligners
|-
|-
 
! scope=row| Developer
|
* AZ 726 MIF (2.38% TMAH)
* AZ 351 B (NaOH)
|
* AZ 726 MIF (2.38% TMAH)
* AZ 351 B (NaOH)
|
* AZ 726 MIF (2.38% TMAH)
* [[Specific_Process_Knowledge/Lithography/nLOF#Development|Solvent development possible]]
|
AZ 726 MIF (2.38% TMAH)
|
mr-DEV 600 (PGMEA)
|
AZ 726 MIF (2.38% TMAH)
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| Development rinse agent
!Exposure tool
| DIW || DIW || DIW || DIW || IPA || DIW
|align="center" colspan="5"|Mask aligner or Maskless aligner
|-
|-
 
! scope=row| Remover
|
* Acetone
* Remover 1165 (NMP)
|
* Acetone
* Remover 1165 (NMP)
|
* Acetone
* Remover 1165 (NMP)
|
Remover 1165 (NMP)
|
* Cross-linked SU-8 is practically insoluble
* Oxygen plasma ashing can remove cross-linked SU-8
|
* Acetone
* Remover 1165 (NMP)
|-
|-
|-style="background:silver; color:black"
! scope=row| Comments
!Developer
| Good adhesion for wet etch
| High selectivity for dry etch
| Negative sidewalls for lift-off
| For processes with resist thickness between 6 µm and 25 µm
|
|
*AZ 351B
* High aspect ratio
*AZ 726 MIF
* Resist thickness 1 µm to hundreds of µm
|
* Available in cleanroom: 2005, 2035, and 2075. Considering discontinuation of the SU-8 2000 series we need to move to another product SU8 3000 and SU8 XTF series.
*AZ 351B
* New formulation will be available in cleanroom and tested: 3005 instead of 2005, 3035 instead of 2035, XTF75 instead of 2075 and new 3025.
*AZ 726 MIF
| TI spray resist is an image reversal resist, similar to AZ 5214E. The process flow will be similar to the process flows for 5214, except for the coating step. The exposure dose and development will depend on the specific process.
|AZ 726 MIF
|}
|AZ 726 MIF
|mr-DEV 600 (PGMEA)
|-


|-
<br clear="all" />
|-style="background:WhiteSmoke; color:black"
!Rinse
|DIW
|DIW
|DIW
|DIW
|IPA
|-


|-
==Process flow examples==
|-style="background:silver; color:black"
Comparison of specifications and feature space of the standard UV photoresists available at DTU Nanolab. These are just examples and may contain obsolete information regarding exposure dose, etc.
!Remover
|
*Acetone
*Remover 1165
|
*Acetone
*Remover 1165
|
*Acetone
*Remover 1165
|
Remover 1165
|
Cured SU-8 is practically insoluble


Plasma ashing can remove crosslinked SU-8
{| class="wikitable"
|-
|-
 
! scope=row| Resist
! style="width: 15%;"| AZ 5214E
! style="width: 15%;"| AZ MIR 701
! style="width: 15%;"| AZ nLOF 2020
! style="width: 15%;"| AZ 4562
! style="width: 15%;"| SU-8
! style="width: 15%;"| Ti Spray
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| Maskless aligner
!Comments
|
|
*Can be used for both positive and image reversed (negative) processes with resist thickness between 1 and 4 µm.
* [[media:‎process_flow_AZ_5214E_positive_MLA_-_2023-02.docx‎ |Process flow AZ 5214E positive‎ MLA]]
*Good adhesion for wet etch.
* [[media:process_flow_AZ_5214E_IR_MLA_-_2023-02.docx‎ |Process flow AZ 5214E image reversal MLA]]
|
|
High selectivity for dry etch
[[media:process_flow_AZ_MiR_701_MLA_-_2023-02.docx‎|Process flow AZ MiR 701‎ MLA]]
|
|
Negative sidewalls for lift-off
[[media:process_flow_AZ_nLOF_2020_MLA_-_2023-02.docx‎|Process flow AZ nLOF 2020‎ MLA‎]]
|
|
For processes with resist thickness between 6 µm and 25 µm
[[media:process_flow_AZ_4562_MLA_-_2023-02.docx‎|Process flow AZ 4562 MLA]]
|
|
*High aspect ratio
[[media:process_flow_SU-8_MLA_-_2023-02.docx‎|Process flow SU-8 MLA‎]]
*Resist thickness 1 µm to several 100 µm
|-


NB! Most of the process knowledge about SU-8 is based in research groups
|
|-
|-
|-style="background:silver; color:black"
! scope=row| Mask aligner
!Process flow examples
|
|
Mask aligner:
* [[media:‎process_flow_AZ_5214E_positive_MA6_-_2023-02.docx‎ |Process flow AZ 5214E positive‎ MA6]]
[[media:‎Process_Flow_AZ5214E_pos_vers2.docx‎ |Process_Flow_AZ5214_pos.docx‎]]
* [[media:process_flow_AZ_5214E_IR_MA6_-_2023-02.docx‎ |Process flow AZ 5214E image reversal MA6]]
[[media:Process_Flow_AZ5214E_rev_vers2.docx‎ |Process_Flow_AZ5214_rev.docx‎]]
|
 
[[media:process_flow_AZ_MiR_701_MA6_-_2023-02.docx‎|Process flow AZ MiR 701‎ MA6]]
Maskless aligner:
[[media:‎Process_Flow_AZ5214E_MLA_pos.docx‎ |Process_Flow_AZ5214_MLA_pos.docx‎]]
[[media:Process_Flow_AZ5214E_MLA_rev.docx‎ |Process_Flow_AZ5214_MLA_rev.docx‎]]
|
|
Mask aligner:
[[media:process_flow_AZ_nLOF_2020_MA6_-_2023-02.docx‎|Process flow AZ nLOF 2020‎ MA6‎]]
[[media:Process_Flow_AZ_MiR701.docx‎|Process_Flow_AZ_MiR701.docx‎]]
 
Maskless aligner:
[[media:Process_Flow_AZ_MiR701_MLA.docx‎|Process_Flow_AZ_MiR701_MLA.docx‎]]
|
|
Mask aligner:
[[media:process_flow_AZ_4562_MA6_-_2023-02.docx‎|Process flow AZ 4562 MA6‎]]
[[media:Process_Flow_AZ_nLOF_2020.docx‎|Process_Flow_AZ_nLOF_2020.docx‎]]
 
Maskless aligner:
[[media:Process_Flow_AZ_nLOF_2020_MLA.docx‎|Process_Flow_AZ_nLOF_2020_MLA.docx‎]]
|
|
Mask aligner:
[[media:process_flow_SU-8_MA6_-_2023-02.docx‎|Process flow SU-8 MA6‎]]
[[media:Process_Flow_thick_AZ4562_vers2.docx‎|Process_Flow_thick_AZ4562.docx‎]]


Maskless aligner:
NB! Most of the process knowledge about SU-8 is based in research groups
[[media:Process_Flow_thick_AZ4562_MLA.docx‎|Process_Flow_thick_AZ4562_MLA.docx‎]]
|
|
[[media:Process_Flow_SU8_70um.docx‎|Process_Flow_SU8_70um.docx‎]]
|}


Most of the process knowledge on SU-8 is based in research groups
'''Other process flows:'''
|-
[[Media:process_flow_chip_on_carrier_-_2023-02.docx|Chip on carrier]]: A procedure for UV lithography on a chip using automatic coater and developer.


|}
<br clear="all" />
<br clear="all" />


==Exposure dose==
==Exposure dose==
[[Image:AZ photoresists spectral sensitivity - remake v1.png|400x400px|thumb|Spectral sensitivity of AZ resists represented as optical absorption.]]
[[Image:resistSensitivity_UV.png|400px|thumb|Spectral sensitivity of AZ resists represented as optical absorption coefficient.]]


During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction that makes the resist develop in the developer.
During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction which makes the resist develop in the developer.


In a positive resist, it makes the resist become soluble in the developer. In a negative resist, usually assisted by thermal energy in the post-exposure bake, it makes the resist ''in''soluble in the developer. The amount of light required to fully develop the resist in the development process, is the exposure dose.
In a positive resist, it makes the resist become soluble in the developer. In a negative resist, usually assisted by thermal energy in the post-exposure bake (PEB), it makes the resist ''in''soluble in the developer. The amount of light required to fully develop the resist in the development process, is the exposure dose.


The optimal exposure dose is a function of many parameters, including the type of resist, the resist thickness, and the sensitivity of the resist.
The optimal exposure dose is a function of many parameters, including the type of resist, the resist thickness, and the sensitivity of the resist.
Line 221: Line 227:
In the maskless aligners, the dose is set directly as a process parameter in the job. In mask aligners, on the other hand, the parameter that is set is the exposure time, i.e. how long the shutter is open during the exposure.
In the maskless aligners, the dose is set directly as a process parameter in the job. In mask aligners, on the other hand, the parameter that is set is the exposure time, i.e. how long the shutter is open during the exposure.


The exposure dose, ''D'' [J/m<sup>2</sup>], is given by:
The exposure dose, ''D'' [J/m<sup>2</sup>], in terms if exposure light intensity ''I'' [W/m<sup>2</sup>] and exposure time ''t'' [s], is given by:


''D'' = ''I'' x ''t'' ,
<math>D=I \sdot t</math>


where ''I'' [W/m<sup>2</sup>] is the intensity of the exposure light, and ''t'' [s] is the exposure time. As the intensity is specific to the spectral sensitivity of the sensor used to measure the exposure light, and the exposure time is specific to the spectral distribution of the exposure light (cf. spectral sensitivity), this dose is specific to the combination of exposure source and optical sensor.
Since the intensity is specific to the spectral sensitivity of the sensor used to measure the exposure light, and the exposure time is specific to the spectral distribution of the exposure light (cf. spectral sensitivity), this dose is specific to the combination of exposure source and optical sensor.


Given an exposure dose, the exposure time, ''t'', is calculated as:
Given an exposure dose, the exposure time, ''t'', is calculated as:


''t'' = ''D'' / ''I''
<math>t = D \sdot I^{-1}</math>


It is important to keep in mind that this exposure time is valid only for a specific combination of exposure source and optical sensor, as well as for a specific development process.
It is important to keep in mind that this exposure time is valid ''only'' for a specific combination of exposure source and optical sensor, as well as for a specific development process.


==Exposure dose for mask aligners==
==Exposure dose for mask aligners==
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners|Information about the exposure dose for mask aligners can be found here.]]
 
All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH.
 
===KS Aligner===
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.
 
{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
|
!Date
!Thickness
!Dose
!Development
!Comments
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="3"|AZ 5214E<br><span style="color:red">Old German version</span>
|Long ago
|1.5 µm
|72 mJ/cm<sup>2</sup>
|rowspan="3"|Single puddle, 60 s
|rowspan="3"|Positive process
|-style="background:WhiteSmoke; color:black"
|Long ago
|2.2 µm
|80 mJ/cm<sup>2</sup>
|-style="background:WhiteSmoke; color:black"
|Long ago
|4.2 µm
|160 mJ/cm<sup>2</sup>
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ 4562<br><span style="color:red">Old German version</span>
|Long ago
|10 µm
|510 mJ/cm<sup>2</sup>
|Multiple puddle, 4 x 60 s
|Multiple exposure with 10-15 s pauses is recommended.
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="3"|AZ MiR 701<br><span style="color:red">Old PFOA containing version</span>
|Long ago
|1 µm
|180 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="2"|PEB: 60 s at 110°C
|-style="background:WhiteSmoke; color:black"
|Long ago
|2 µm
|200 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|-style="background:WhiteSmoke; color:black"
|Long ago
|4 µm
|400 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="1"|PEB: 90 s at 110°C
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ nLOF 2020
|Long ago
|2 µm
|110 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|PEB: 60 s at 110°C
Side wall angle ~15°
 
For smaller angle (~5°), develop 30 seconds instead
|}
 
===Aligner: MA6 - 2===
The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.
 
{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
|
!Date
!Thickness
!Dose
!Development
!Comments
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="2"|AZ 5214E<br><span style="color:red">Old German version</span>
|Long ago
|1.5 µm
|72 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="2"|Positive process
|-style="background:WhiteSmoke; color:black"
|Long ago
|2.2 µm
|90 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|-
 
|-
|-style="background:LightGrey; color:black"
!rowspan="2"|AZ 5214E Image Reversal<br><span style="color:red">Old German version</span>
|Long ago
|1.5 µm
|22 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="2"|Image reversal process.<br>Reversal bake: 120 s at 110°C.<br>Flood exposure: 200 mJ/cm<sup>2</sup>
|-style="background:LightGrey; color:black"
|Long ago
|2.2 µm
|25 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="3"|AZ MiR 701<br><span style="color:red">Old PFOA containing version</span>
|Long ago
|1.5 µm
|169 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="2"|PEB: 60 s at 110°C
|-style="background:WhiteSmoke; color:black"
|Long ago
|2 µm
|200 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|-style="background:WhiteSmoke; color:black"
|Long ago
|4 µm
|280 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="1"|PEB: 60 s at 110°C<br>Process adopted from process logs
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ nLOF 2020
|Long ago
|1.5 µm
|104 mJ/cm<sup>2</sup>
|Single puddle, 30 s
|PEB: 60 s at 110°C<br>Use 60 s development for lift-off
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ 5214E<br><span style="color:green">New Japanese version</span>
|2023-01-11<br>jehem
|1.5 µm
|70 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ 5214E Image Reversal<br><span style="color:green">New Japanese version</span>
|2023-01-11<br>jehem
|2.2 µm
|22 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|Image reversal process.<br>Reversal bake: 60 s at 110°C.<br>Flood exposure: 500 mJ/cm<sup>2</sup>
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ 4562<br><span style="color:green">New Japanese version</span>
|2021-12-08<br>jehem
|10 µm
|550 mJ/cm<sup>2</sup>
|Multiple puddles, 5 x 60 s
|Priming: HMDS<BR>Rehydration after SB: 1 hour (may not be necessary)<br>Exposure: Multiple exposures with pauses, 5 x (10 s exposure + 10 s pause)<br>Degassing after exposure: 1 hour (may not be necessary)
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ MiR 701<br><span style="color:green">New PFOA free version</span>
|2021-06-23<br>elkh
|1.5 µm
|150 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|PEB: 60 s at 110°C
|-
|}


==Exposure dose for maskless aligners==
==Exposure dose for maskless aligners==
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners|Information about the exposure dose for maskless aligners can be found here.]]
 
All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH.
 
===Aligner: Maskless 01===
The Aligner: Maskless 01 has a 365 nm LED light source with a FWHM of 8 nm.
 
{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
|
!Date
!Thickness
!Exposure mode
!Dose
!Defoc
!Resolution
!Comments
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="2"| AZ 5214E<br><span style="color:red">Old German version</span>
| 2021-08-19<br>jehem
| 1.5 µm
| Fast
| 80 mJ/cm<sup>2</sup>
| -4
| 2 µm
| Dev: SP60s
|-style="background:WhiteSmoke; color:black"
| 2021-08-19<br>jehem
| 1.5 µm
| Quality
| 80 mJ/cm<sup>2</sup>
| -4
| 1.25 µm
| Dev: SP60s
|-
 
|-
|-style="background:LightGrey; color:black"
!rowspan="2"| AZ 5214E image reversal<br><span style="color:red">Old German version</span>
| 2020-03-01<br>taran
| 2.2 µm
| Fast
| 43 mJ/cm<sup>2</sup>
| 0
| >2 µm (a lot of stitching)
| Reversal bake: 120s@110°C, Flood exposure: 200mJ/cm<sup>2</sup>, Dev: SP60s
|-style="background:LightGrey; color:black"
| 2021-08-25<br>jehem
| 2.2 µm
| Quality
| 26 mJ/cm<sup>2</sup>
| -4
| 1.75 µm
| Reversal bake: 120s@110°C, Flood exposure: 200mJ/cm<sup>2</sup>, Dev: SP60s
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ MiR 701<br><span style="color:red">Old PFOA containing version</span>
| 2021-08-25<br>jehem
| 1.5 µm
| Fast
| 225 mJ/cm<sup>2</sup>
| -4
| 1.25 µm<br>Tested using dehydration reducing measures
| PEB: 60s@110°C, Dev: SP60s
|-style="background:WhiteSmoke; color:black"
|-
 
|-
|-style="background:LightGrey; color:black"
!rowspan="2"| AZ nLOF 2020
| 2020-02-01<br>jehem
| 2.0 µm
| Fast
| 300 mJ/cm<sup>2</sup>
| 0
| 2 µm (due to stitching)
| PEB: 60s@110°C, Dev: SP60s
|-style="background:LightGrey; color:black"
| 2020-03-01<br>taran
| 2.0 µm
| Quality
| 180-200 mJ/cm<sup>2</sup>
| 0
| 1 µm
| PEB: 60s@110°C, Dev: SP60s
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ 5214E<br><span style="color:green">New Japanese version</span>
| 2023-01-06<br>jehem
| 1.5 µm
| Fast
| 80 mJ/cm<sup>2</sup>
| -2
| 1.75 µm
| Dev: SP60s
|-style="background:WhiteSmoke; color:black"
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ 5214E image reversal<br><span style="color:green">New Japanese version</span>
| 2023-01-11<br>jehem
| 2.2 µm
| Fast
| 42 mJ/cm<sup>2</sup>
| -2
| 1.75 µm
| Reversal bake: 60s@110°C, Flood exposure: 500mJ/cm<sup>2</sup>, Dev: SP60s
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ MiR 701<br><span style="color:green">New PFOA free version</span>
| 2021-08-25<br>jehem
| 1.5 µm
| Fast
| 225 mJ/cm<sup>2</sup>
| -4
| 1.25 µm (due to stitching)<br>Tested using dehydration reducing measures
| PEB: 60s@110°C, Dev: SP60s
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ 4562<br><span style="color:green">New Japanese version</span>
| 2021-12-07<br>jehem
| 10 µm
| Fast
| 750 mJ/cm<sup>2</sup>
| 0
| ≤5 µm
| Priming: HMDS<BR>Rehydration after SB: 1 hour (may not be necessary)<br>Exposure: Multiple exposures with pauses, 5 x (10 s exposure + 10 s pause)<br>Degassing after exposure: 1 hour (may not be necessary)<br>Development: Multiple puddles, 5 x 60 s
|-
 
|}
<br>
'''Dehydration reducing measures used for testing AZ MiR 701:'''<br>
The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure.
 
===Aligner: Maskless 02===
The Aligner: Maskless 02 has a 375 nm laser light source, and a 405 nm laser light source, each with a FWHM of ~1 nm.
 
{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
|
!Date
!Thickness
!Laser
!Exposure mode
!Dose
!Defoc
!Resolution
!Comments
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="2"| AZ 5206E<br>(AZ5214E diluted with PGMEA 1:1 per volume)<br><span style="color:red">Old German version</span>
| Long ago
|rowspan="2"| 0.5 µm
|rowspan="2"| 375 nm
| Fast
| 60 mJ/cm<sup>2</sup>
| -6
| 1 µm (not optimized)
| Dev: 2xSP30s
|-style="background:WhiteSmoke; color:black"
| Long ago
| Quality
| 60 mJ/cm<sup>2</sup>
| -6
| ~750 nm (not optimized)
| Dev: 2xSP30s
|-
 
|-
|-style="background:LightGrey; color:black"
!rowspan="3"| AZ 5214E<br><span style="color:red">Old German version</span>
| Long ago
|rowspan="3"| 1.5 µm
| 405 nm
| Fast
| 90 mJ/cm<sup>2</sup>
| -2
| 1-2 µm
| Dev: SP60s
|-style="background:LightGrey; color:black"
| Long ago
|rowspan="2"| 375 nm
| Fast
| 65 mJ/cm<sup>2</sup>
| 2
| ~1 µm
| Dev: SP60s
|-style="background:LightGrey; color:black"
| Long ago
| Quality
| 65 mJ/cm<sup>2</sup>
| 2
| ~750 nm
| Dev: SP60s
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="3"| AZ MiR 701<br><span style="color:red">Old PFOA containing version</span>
| Long ago
|rowspan="3"| 1.5 µm
| 405 nm
| Fast
| 200 mJ/cm<sup>2</sup>
| -5
| ~1 µm (not optimized)
| PEB: 60s@110°C, Dev: SP60s
|-style="background:WhiteSmoke; color:black"
| Long ago
|rowspan="2"| 375 nm
| Fast
| 170 mJ/cm<sup>2</sup>
| -5
| 1 µm
| PEB: 60s@110°C, Dev: SP60s
|-style="background:WhiteSmoke; color:black"
| Long ago
| Quality
| 180 mJ/cm<sup>2</sup>
| -6 (Feb 2019) <br> -2 (Apr 2019)
| <750 nm
| PEB: 60s@110°C, Dev: SP60s <br> Large structures probably over-exposed
|-
 
|-
|-style="background:LightGrey; color:black"
!rowspan="2"| AZ nLOF 2020
| 2021-02-22<br>jehem
|rowspan="2"| 2 µm
|rowspan="2"| 375 nm
| Fast
| 350 mJ/cm<sup>2</sup>
| 0
| 1 µm
| PEB: 120s@110°C, Dev: SP60s
|-style="background:LightGrey; color:black"
| 2021-02-22<br>jehem
| Quality
| 350 mJ/cm<sup>2</sup>
| 0
| 1 µm
| PEB: 120s@110°C, Dev: SP60s
|-
 
|}
 
<br>
 
{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
|
!Date
!Thickness
!Laser
!Autofocus
!Exposure mode
!Dose
!Defoc
!Resolution
!Comments
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ 5214E<br><span style="color:green">New Japanese version</span>
| 2021-08-20<br>jehem
| 1.5 µm
| 375
| Optical
| Fast
| 70 mJ/cm<sup>2</sup>
| -4
| 1 µm
| Dev: SP60s
|-style="background:WhiteSmoke; color:black"
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ 5214E image reversal<br><span style="color:green">New Japanese version</span>
| 2021-11-25<br>jehem
| 2.2 µm
| 375
| Optical
| Fast
| <s>16 mJ/cm<sup>2</sup></s>
| <s>-4</s>
| <s>1.75 µm</s>
| Reversal bake: 60s@110°C, Flood exposure: 500mJ/cm<sup>2</sup>, Dev: SP60s
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ MiR 701<br><span style="color:green">New PFOA free version</span>
| 2021-08-20<br>jehem
| 1.5 µm
| 375
| Optical
| Fast
| 200 mJ/cm<sup>2</sup>
| -6
| 1 µm<br>Tested using dehydration reducing measures
| PEB: 60s@110°C, Dev: SP60s
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ 4562<br><span style="color:green">New Japanese version</span>
| 2021-12-08<br>jehem
| 10 µm
| 375
| Optical
| Fast
| 750 mJ/cm<sup>2</sup>
| 0
| ≤5 µm
| Priming: HMDS<BR>Rehydration after SB: 1 hour (may not be necessary)<br>Exposure: Multiple exposures with pauses, 5 x (10 s exposure + 10 s pause)<br>Degassing after exposure: 1 hour (may not be necessary)<br>Development: Multiple puddles, 5 x 60 s
|-
 
|}
<br>
'''Dehydration reducing measures used for testing AZ MiR 701:'''<br>
The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure.
 
===Aligner: Maskless 03===
The Aligner: Maskless 03 has a 405 nm laser light source with a FWHM of ~1 nm.
 
{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
|
!Date
!Thickness
!Exposure mode
!Dose
!Defoc
!Resolution
!Comments
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="2"| AZ 5214E<br><span style="color:red">Old German version</span>
| 2020-10-01<br>jehem
|rowspan="2"| 1.5 µm
| Fast
| 70 mJ/cm<sup>2</sup>
| 0
| 2 µm (due to stitching)
| Dev: SP60s
|-style="background:WhiteSmoke; color:black"
| 2021-03-23<br>jehem
| Quality
| 65 mJ/cm<sup>2</sup>
| -2
| 1 µm
| Dev: SP60s
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="2"| AZ MiR 701<br><span style="color:red">Old PFOA containing version</span>
| 2020-02-01<br>jehem
|rowspan="2"| 1.5 µm
| Fast
| 300 mJ/cm<sup>2</sup>
| 0
| 2 µm (due to stitching)<br>Non optimized dehydration reduction
| PEB: 60s@110°C, Dev: SP60s
|-style="background:WhiteSmoke; color:black"
| 2021-08-25<br>jehem
| Quality
| 175 mJ/cm<sup>2</sup>
| -2
| 1 µm<br>Tested using dehydration reducing measures
| PEB: 60s@110°C, Dev: SP60s
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="2"| AZ 5214E image reversal<br><span style="color:red">Old German version</span>
| 2020-10-01<br>jehem
|rowspan="2"| 2.2 µm
| Fast
| 43 mJ/cm<sup>2</sup>
| 0
| >2 µm (a lot of stitching)
| Reversal bake: 120s@110°C, Flood exposure: 200mJ/cm<sup>2</sup>, Dev: SP60s
|-style="background:WhiteSmoke; color:black"
| 2021-08-25<br>jehem
| Quality
| 32 mJ/cm<sup>2</sup>
| -1
| 1 µm
| Reversal bake: 120s@110°C, Flood exposure: 200mJ/cm<sup>2</sup>, Dev: SP60s
|-
 
|}
 
 
'''AZ nLOF 2020''' has also been tested. It seems to work even at 405nm, but the dose is so high (>10000) that exposure would be slower than Aligner: Maskless 02.
<br>
<br>
 
{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
|
!Date
!Thickness
!Laser
!Autofocus
!Exposure mode
!Dose
!Defoc
!Resolution
!Comments
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ 5214E<br><span style="color:green">New Japanese version</span>
| 2023-01-06<br>taran
| 1.5 µm
| 405
| Pneumatic
| Quality
| 70 mJ/cm<sup>2</sup>
| -2
| 1 µm
| Dev: SP60s
|-style="background:WhiteSmoke; color:black"
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ 5214E image reversal<br><span style="color:green">New Japanese version</span>
| 2023-01-06<br>taran
| 2.2 µm
| 405
| Pneumatic
| Quality
| 50 mJ/cm<sup>2</sup>
| -2
| 1 µm
| Reversal bake: 60s@110°C, Flood exposure: 500mJ/cm<sup>2</sup>, Dev: SP60s
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ MiR 701<br><span style="color:green">New PFOA free version</span>
| 2021-08-25<br>jehem
| 1.5 µm
| 405
| Pneumatic
| Quality
| 175 mJ/cm<sup>2</sup>
| -2
| 1 µm<br>Tested using dehydration reducing measures
| PEB: 60s@110°C, Dev: SP60s
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ 4562<br><span style="color:green">New Japanese version</span>
| 2021-12-08<br>jehem
| 10 µm
| 405
| Pneumatic
| Quality
| 550 mJ/cm<sup>2</sup>
| 1
| ≤5 µm
| Priming: HMDS<BR>Rehydration after SB: 1 hour (may not be necessary)<br>Exposure: Multiple exposures with pauses, 5 x (10 s exposure + 10 s pause)<br>Degassing after exposure: 1 hour (may not be necessary)<br>Development: Multiple puddles, 5 x 60 s
|-
 
|}
<br>
'''Dehydration reducing measures used for testing AZ MiR 701:'''<br>
The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure.


==Exposure dose when using AZ 351B developer (NaOH)==
==Exposure dose when using AZ 351B developer (NaOH)==
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseNaOH|Information about the exposure dose when using AZ 351B developer can be found here.]]
 
All doses are for standard silicon wafers, unless otherwise stated. Development is done using AZ 351B developer (NaOH).
 
===KS Aligner (351B)===
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.
 
{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
|
!Date
!Thickness
!Dose
!Development]
!Comments
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="3"|AZ 5214E
|Long ago
|1.5 µm
|70mJ/cm<sup>2</sup>
|60 s
|rowspan="3"|Positive process
|-style="background:WhiteSmoke; color:black"
|Long ago
|2.2 µm
|72 mJ/cm<sup>2</sup>
|70 s
|-style="background:WhiteSmoke; color:black"
|Long ago
|4.2 µm
|160 mJ/cm<sup>2</sup>
|180 s
|-
 
|-
|-style="background:LightGrey; color:black"
!rowspan="2"|AZ 5214E
|Long ago
|1.5 µm
|30 mJ/cm<sup>2</sup>
|60 s
|rowspan="2"|Image reversal process.
 
Reversal bake: 100s at 110°C.<br>Flood exposure after reversal bake: 210 mJ/cm<sup>2</sup>
|-style="background:LightGrey; color:black"
|Long ago
|2.2 µm
|35 mJ/cm<sup>2</sup>
|70 s
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ 4562
|Long ago
|10 µm
|320 mJ/cm<sup>2</sup>
|5 minutes
|Multiple exposure with 10-15 s pauses is recommended.
|-
|}
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