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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Resist/UVresist click here]'''
==UV resist comparison table==
Comparison of specifications and feature space of the standard UV photoresists available at DTU Nanolab.


'''This section is under construction [[Image:section under construction.jpg|70px]]'''
{| class="wikitable"
|-
! scope=row| Resist
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/5214E|AZ 5214E]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/MiR|AZ MiR 701]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/nLOF|AZ nLOF 2020]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/4562|AZ 4562]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/SU-8|SU-8]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/TIspray|TI Spray]]
|-
! scope=row| Resist tone
|
*Positive
*Negative (image reversal)
| Positive
| Negative
| Positive
| Negative
|
*Positive
*Negative (image reversal)
|-
! scope=row| Thickness range
| 1.5 - 4.2 µm || 1.5 - 4 µm || 1.5 - 4 µm  || 5 - 10 µm || 1 - 200 µm || 0.5 - 5 µm
|-
! scope=row| Coating tool
|
Automatic spin coaters:
*Spin coater: Gamma UV lithography
*Spin coater: Gamma E-beam & UV
 
Manual spin coaters:
* Spin coater: Labspin 02
* Spin coater: Labspin 03
* Spin coater: RCD8
 
Spray coater
|
Automatic spin coaters:
*Spin coater: Gamma UV lithography
*Spin coater: Gamma E-beam & UV
 
Manual spin coaters:
* Spin coater: Labspin 02
* Spin coater: Labspin 03
* Spin coater: RCD8


= UV resist comparison table =
Spray coater
Comparison of specifications and feature space of UV photoresists.
|
Automatic spin coaters:
*Spin coater: Gamma UV lithography


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
Manual spin coaters:
* Spin coater: Labspin 02
* Spin coater: Labspin 03
* Spin coater: RCD8
 
Spray coater
|  
Automatic spin coaters:
*Spin coater: Gamma E-beam & UV
 
Manual spin coaters:
* Spin coater: Labspin 02
* Spin coater: Labspin 03
* Spin coater: RCD8
|
Manual spin coaters:
* Spin coater: Labspin 02
* Spin coater: Labspin 03
* Spin coater: RCD8
|
Spray coater
|-
! scope=row| Spectral sensitivity
| 310 - 420 nm || 310 - 445 nm || 310 - 380 nm || 310 - 445 nm || 300 - 375 nm || 310 - 440 nm
|-
! scope=row| Exposure tool
|
* Maskless aligners
* Mask aligners
|
* Maskless aligners
* Mask aligners
|
* Maskless aligners
* Mask aligners
|
* Maskless aligners
* Mask aligners
|
* Maskless aligners
* Mask aligners
|
* Maskless aligners
* Mask aligners
|-
|-
 
! scope=row| Developer
|
* AZ 726 MIF (2.38% TMAH)
* AZ 351 B (NaOH)
|
* AZ 726 MIF (2.38% TMAH)
* AZ 351 B (NaOH)
|
* AZ 726 MIF (2.38% TMAH)
* [[Specific_Process_Knowledge/Lithography/nLOF#Development|Solvent development possible]]
|
AZ 726 MIF (2.38% TMAH)
|
mr-DEV 600 (PGMEA)
|
AZ 726 MIF (2.38% TMAH)
|-
! scope=row| Development rinse agent
| DIW || DIW || DIW || DIW || IPA || DIW
|-
! scope=row| Remover
|
* Acetone
* Remover 1165 (NMP)
|
* Acetone
* Remover 1165 (NMP)
|
* Acetone
* Remover 1165 (NMP)
|
Remover 1165 (NMP)
|
* Cross-linked SU-8 is practically insoluble
* Oxygen plasma ashing can remove cross-linked SU-8
|
* Acetone
* Remover 1165 (NMP)
|-
|-
|-style="background:silver; color:black"
! scope=row| Comments
!Resist
| Good adhesion for wet etch
|
| High selectivity for dry etch
|
| Negative sidewalls for lift-off
|
| For processes with resist thickness between 6 µm and 25 µm
|
|
|
* High aspect ratio
* Resist thickness 1 µm to hundreds of µm
* Available in cleanroom: 2005, 2035, and 2075. Considering discontinuation of the SU-8 2000 series we need to move to another product SU8 3000 and SU8 XTF series.
* New formulation will be available in cleanroom and tested: 3005 instead of 2005, 3035 instead of 2035, XTF75 instead of 2075 and new 3025.
| TI spray resist is an image reversal resist, similar to AZ 5214E. The process flow will be similar to the process flows for 5214, except for the coating step. The exposure dose and development will depend on the specific process.
|}
<br clear="all" />
==Process flow examples==
Comparison of specifications and feature space of the standard UV photoresists available at DTU Nanolab. These are just examples and may contain obsolete information regarding exposure dose, etc.
{| class="wikitable"
|-
|-
 
! scope=row| Resist
! style="width: 15%;"| AZ 5214E
! style="width: 15%;"| AZ MIR 701
! style="width: 15%;"| AZ nLOF 2020
! style="width: 15%;"| AZ 4562
! style="width: 15%;"| SU-8
! style="width: 15%;"| Ti Spray
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| Maskless aligner
!Resist tone
|
|
* [[media:‎process_flow_AZ_5214E_positive_MLA_-_2023-02.docx‎ |Process flow AZ 5214E positive‎ MLA]]
* [[media:process_flow_AZ_5214E_IR_MLA_-_2023-02.docx‎ |Process flow AZ 5214E image reversal MLA]]
|
|
[[media:process_flow_AZ_MiR_701_MLA_-_2023-02.docx‎|Process flow AZ MiR 701‎ MLA]]
|
|
[[media:process_flow_AZ_nLOF_2020_MLA_-_2023-02.docx‎|Process flow AZ nLOF 2020‎ MLA‎]]
|
|
[[media:process_flow_AZ_4562_MLA_-_2023-02.docx‎|Process flow AZ 4562 MLA]]
|
|
|-
[[media:process_flow_SU-8_MLA_-_2023-02.docx‎|Process flow SU-8 MLA‎]]


|-style="background:silver; color:black"
NB! Most of the process knowledge about SU-8 is based in research groups
!Thickness range
|
|
|
|
|
|
|-
|-
 
! scope=row| Mask aligner
|-
|-style="background:WhiteSmoke; color:black"
!Coating tool
|
|
* [[media:‎process_flow_AZ_5214E_positive_MA6_-_2023-02.docx‎ |Process flow AZ 5214E positive‎ MA6]]
* [[media:process_flow_AZ_5214E_IR_MA6_-_2023-02.docx‎ |Process flow AZ 5214E image reversal MA6]]
|
|
[[media:process_flow_AZ_MiR_701_MA6_-_2023-02.docx‎|Process flow AZ MiR 701‎ MA6]]
|
|
[[media:process_flow_AZ_nLOF_2020_MA6_-_2023-02.docx‎|Process flow AZ nLOF 2020‎ MA6‎]]
|
|
[[media:process_flow_AZ_4562_MA6_-_2023-02.docx‎|Process flow AZ 4562 MA6‎]]
|
|
|-
[[media:process_flow_SU-8_MA6_-_2023-02.docx‎|Process flow SU-8 MA6‎]]


NB! Most of the process knowledge about SU-8 is based in research groups
|
|}
|}
'''Other process flows:'''
[[Media:process_flow_chip_on_carrier_-_2023-02.docx|Chip on carrier]]: A procedure for UV lithography on a chip using automatic coater and developer.
<br clear="all" />
<br clear="all" />


= Exposure dose =
==Exposure dose==
[[Image:AZ photoresists spectral sensitivity - remake v1.png|400x400px|thumb|Spectral sensitivity of AZ resists represented as optical absorption.]]
[[Image:resistSensitivity_UV.png|400px|thumb|Spectral sensitivity of AZ resists represented as optical absorption coefficient.]]


During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction that makes the resist develop in the developer.
During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction which makes the resist develop in the developer.


In a positive resist, it makes the resist become soluble in the developer. In a negative resist, usually assisted by thermal energy in the post-exposure bake, it makes the resist ''in''soluble in the developer. The amount of light required to fully develop the resist in the development process, is the exposure dose.
In a positive resist, it makes the resist become soluble in the developer. In a negative resist, usually assisted by thermal energy in the post-exposure bake (PEB), it makes the resist ''in''soluble in the developer. The amount of light required to fully develop the resist in the development process, is the exposure dose.


The optimal exposure dose is a function of many parameters, including the type of resist, the resist thickness, and the sensitivity of the resist.
The optimal exposure dose is a function of many parameters, including the type of resist, the resist thickness, and the sensitivity of the resist.
Line 71: Line 224:
Due to the process of bleaching, where the absorption of the resist changes during exposure, the exposure dose is unfortunately not always constant at different intensities of the exposure light. The exposure time is thus not always a linear function of the exposure intensity.
Due to the process of bleaching, where the absorption of the resist changes during exposure, the exposure dose is unfortunately not always constant at different intensities of the exposure light. The exposure time is thus not always a linear function of the exposure intensity.


= Calculate exposure time =
==Calculate exposure time==
In the maskless aligners, the dose is set directly as a process parameter in the job. In mask aligners, on the other hand, the parameter that is set is the exposure time, i.e. how long the shutter is open during the exposure.
In the maskless aligners, the dose is set directly as a process parameter in the job. In mask aligners, on the other hand, the parameter that is set is the exposure time, i.e. how long the shutter is open during the exposure.


The exposure dose, ''D'' [J/m<sup>2</sup>], is given by:
The exposure dose, ''D'' [J/m<sup>2</sup>], in terms if exposure light intensity ''I'' [W/m<sup>2</sup>] and exposure time ''t'' [s], is given by:


''D'' = ''I'' x ''t'' ,
<math>D=I \sdot t</math>


where ''I'' [W/m<sup>2</sup>] is the intensity of the exposure light, and ''t'' [s] is the exposure time. As the intensity is specific to the spectral sensitivity of the sensor used to measure the exposure light, and the exposure time is specific to the spectral distribution of the exposure light (cf. spectral sensitivity), this dose is specific to the combination of exposure source and optical sensor.
Since the intensity is specific to the spectral sensitivity of the sensor used to measure the exposure light, and the exposure time is specific to the spectral distribution of the exposure light (cf. spectral sensitivity), this dose is specific to the combination of exposure source and optical sensor.


Given an exposure dose, the exposure time, ''t'', is calculated as:
Given an exposure dose, the exposure time, ''t'', is calculated as:


''t'' = ''D'' / ''I''
<math>t = D \sdot I^{-1}</math>
 
It is important to keep in mind that this exposure time is valid only for a specific combination of exposure source and optical sensor, as well as for a specific development process.
 
=Exposure dose for mask aligners=
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.
 
All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH.
 
==KS Aligner==
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.
 
{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
|
!Date
!Thickness
!Dose
!Development
!Comments
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="3"|AZ 5214E<br><span style="color:red">Old German version</span>
|Long ago
|1.5 µm
|72 mJ/cm<sup>2</sup>
|rowspan="3"|Single puddle, 60 s
|rowspan="3"|Positive process
|-style="background:WhiteSmoke; color:black"
|Long ago
|2.2 µm
|80 mJ/cm<sup>2</sup>
|-style="background:WhiteSmoke; color:black"
|Long ago
|4.2 µm
|160 mJ/cm<sup>2</sup>
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ 4562<br><span style="color:red">Old German version</span>
|Long ago
|10 µm
|510 mJ/cm<sup>2</sup>
|Multiple puddle, 4 x 60 s
|Multiple exposure with 10-15 s pauses is recommended.
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="3"|AZ MiR 701<br><span style="color:red">Old PFOA containing version</span>
|Long ago
|1 µm
|180 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="2"|PEB: 60 s at 110°C
|-style="background:WhiteSmoke; color:black"
|Long ago
|2 µm
|200 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|-style="background:WhiteSmoke; color:black"
|Long ago
|4 µm
|400 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="1"|PEB: 90 s at 110°C
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ nLOF 2020
|Long ago
|2 µm
|110 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|PEB: 60 s at 110°C
Side wall angle ~15°
 
For smaller angle (~5°), develop 30 seconds instead
|}
 
==Aligner: MA6 - 2==
The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.


{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
It is important to keep in mind that this exposure time is valid ''only'' for a specific combination of exposure source and optical sensor, as well as for a specific development process.
|-


|-
==Exposure dose for mask aligners==
|-style="background:silver; color:black"
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners|Information about the exposure dose for mask aligners can be found here.]]
|
!Date
!Thickness
!Dose
!Development
!Comments
|-


|-
==Exposure dose for maskless aligners==
|-style="background:WhiteSmoke; color:black"
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners|Information about the exposure dose for maskless aligners can be found here.]]
!rowspan="2"|AZ 5214E<br><span style="color:red">Old German version</span>
|Long ago
|1.5 µm
|72 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="2"|Positive process
|-style="background:WhiteSmoke; color:black"
|Long ago
|2.2 µm
|90 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|-


|-
==Exposure dose when using AZ 351B developer (NaOH)==
|-style="background:LightGrey; color:black"
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseNaOH|Information about the exposure dose when using AZ 351B developer can be found here.]]
!rowspan="2"|AZ 5214E Image Reversal<br><span style="color:red">Old German version</span>
|Long ago
|1.5 µm
|22 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="2"|Image reversal process.<br>Reversal bake: 120 s at 110°C.<br>Flood exposure: 200 mJ/cm<sup>2</sup>
|-style="background:LightGrey; color:black"
|Long ago
|2.2 µm
|25 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="3"|AZ MiR 701<br><span style="color:red">Old PFOA containing version</span>
|Long ago
|1.5 µm
|169 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="2"|PEB: 60 s at 110°C
|-style="background:WhiteSmoke; color:black"
|Long ago
|2 µm
|200 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|-style="background:WhiteSmoke; color:black"
|Long ago
|4 µm
|280 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="1"|PEB: 60 s at 110°C<br>Process adopted from process logs
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ nLOF 2020
|Long ago
|1.5 µm
|104 mJ/cm<sup>2</sup>
|Single puddle, 30 s
|PEB: 60 s at 110°C<br>Use 60 s development for lift-off
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ 5214E<br><span style="color:green">New Japanese version</span>
|2023-01-11<br>jehem
|1.5 µm
|70 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ 5214E Image Reversal<br><span style="color:green">New Japanese version</span>
|2023-01-11<br>jehem
|2.2 µm
|22 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|Image reversal process.<br>Reversal bake: 60 s at 110°C.<br>Flood exposure: 500 mJ/cm<sup>2</sup>
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ 4562<br><span style="color:green">New Japanese version</span>
|2021-12-08<br>jehem
|10 µm
|550 mJ/cm<sup>2</sup>
|Multiple puddles, 5 x 60 s
|Priming: HMDS<BR>Rehydration after SB: 1 hour (may not be necessary)<br>Exposure: Multiple exposures with pauses, 5 x (10 s exposure + 10 s pause)<br>Degassing after exposure: 1 hour (may not be necessary)
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ MiR 701<br><span style="color:green">New PFOA free version</span>
|2021-06-23<br>elkh
|1.5 µm
|150 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|PEB: 60 s at 110°C
|-
|}
 
=Exposure dose for maskless aligners=
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.
 
All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH.
 
==Aligner: Maskless 01==
 
 
==Aligner: Maskless 02==
 
 
==Aligner: Maskless 03==
 
=Exposure dose when using AZ 351B developer (NaOH)=
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.
 
All doses are for standard silicon wafers, unless otherwise stated. Development is done using AZ 351B developer (NaOH).
 
==KS Aligner (351B)==
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.
 
{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
|
!Date
!Thickness
!Dose
!Development]
!Comments
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="3"|AZ 5214E
|Long ago
|1.5 µm
|70mJ/cm<sup>2</sup>
|60 s
|rowspan="3"|Positive process
|-style="background:WhiteSmoke; color:black"
|Long ago
|2.2 µm
|72 mJ/cm<sup>2</sup>
|70 s
|-style="background:WhiteSmoke; color:black"
|Long ago
|4.2 µm
|160 mJ/cm<sup>2</sup>
|180 s
|-
 
|-
|-style="background:LightGrey; color:black"
!rowspan="2"|AZ 5214E
|Long ago
|1.5 µm
|30 mJ/cm<sup>2</sup>
|60 s
|rowspan="2"|Image reversal process.
 
Reversal bake: 100s at 110°C.<br>Flood exposure after reversal bake: 210 mJ/cm<sup>2</sup>
|-style="background:LightGrey; color:black"
|Long ago
|2.2 µm
|35 mJ/cm<sup>2</sup>
|70 s
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ 4562
|Long ago
|10 µm
|320 mJ/cm<sup>2</sup>
|5 minutes
|Multiple exposure with 10-15 s pauses is recommended.
|-
|}
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