Specific Process Knowledge/Etch/DRIE-Pegasus/DREM: Difference between revisions

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= DREM 2kW micro =
= DREM 2kW micro =


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|PriorProcessSteps=  Pump to base, Clamp Substrate, home platen matching unit, stabilisation
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|Keywords=  
|PlatenPosition=U          |PlatenFrequency=HF          |StabilisationTime=          |StartCycleEndCycle=D/E
|PlatenPosition=U          |PlatenFrequency=HF          |StabilisationTime=          |StartCycleEndCycle=D/E
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|PressureDepDelay=          |PressureDepBoost=          |PressureDepMain=100%
|PressureDepDelay=          |PressureDepBoost=          |PressureDepMain=100%
|PressureEtchDelay=        |PressureEtchBoost=          |PressureEtchMain=100%
|PressureEtchDelay=        |PressureEtchBoost=          |PressureEtchMain=100%
|C4F8DepDelay=0.3@5        |C4F8DepBoost= 0.5@50        |C4F8DepMain=200
|C4F8DepDelay=0.3@5        |C4F8DepBoost= 0.5@ 50        |C4F8DepMain=200
|C4F8EtchDelay=0.5@100      |C4F8EtchBoost=              |C4F8EtchMain=5
|C4F8EtchDelay=0.5@ 100      |C4F8EtchBoost=              |C4F8EtchMain=5
|SF6DepDelay=0.3@200        |SF6DepBoost=0.5@200        |SF6DepMain=15
|SF6DepDelay=0.3@ 200        |SF6DepBoost=0.5@ 200        |SF6DepMain=15
|SF6EtchDelay=2@15          |SF6EtchBoost=0.3@100        |SF6EtchMain=200
|SF6EtchDelay=2@ 15          |SF6EtchBoost=0.3@ 100        |SF6EtchMain=200
|O2Dep=                    |O2Etch=                    |ArDep=150                        |ArEtch=150
|O2Dep=                    |O2Etch=                    |ArDep=150                        |ArEtch=150
|WCoilDep=2                |WCoilEtch=2                |WPlatenDep=1  
|WCoilDep=2                |WCoilEtch=2                |WPlatenDep=1  
|WPlatenEtchDelay=1@1      |WPlatenEtchBoost=1@100      |WPlatenEtchMain=1
|WPlatenEtchDelay=1@1      |WPlatenEtchBoost=1@ 100      |WPlatenEtchMain=1
|WClaritasDep=              |WClaritasEtch=       
|WClaritasDep=              |WClaritasEtch=       
|%CoilDepLoad=40            |%CoilDepTune=50            |%CoilEtchLoad=40                  |%CoilEtchTune=50
|%CoilDepLoad=40            |%CoilDepTune=50            |%CoilEtchLoad=40                  |%CoilEtchTune=50
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|Link2RecipeRun=[[Specific Process Knowledge/Etch/DRIE-Pegasus/DREM/DREM 2kW micro | '''8''']]
|Link2RecipeRun=[[Specific Process Knowledge/Etch/DRIE-Pegasus/DREM/DREM 2kW micro | '''8''']]
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|PriorProcessSteps=  Pump to base, Clamp Substrate, home platen matching unit, stabilisation
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|PlatenPosition=U          |PlatenFrequency=HF          |StabilisationTime=          |StartCycleEndCycle=D/E
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|PressureDepDelay=          |PressureDepBoost=          |PressureDepMain=100%
|PressureDepDelay=          |PressureDepBoost=          |PressureDepMain=100%
|PressureEtchDelay=        |PressureEtchBoost=          |PressureEtchMain=100%
|PressureEtchDelay=        |PressureEtchBoost=          |PressureEtchMain=100%
|C4F8DepDelay=0.3@5        |C4F8DepBoost= 0.5@50        |C4F8DepMain=200
|C4F8DepDelay=0.3 @5        |C4F8DepBoost= 0.5@ 50        |C4F8DepMain=200
|C4F8EtchDelay=0.5@100      |C4F8EtchBoost=              |C4F8EtchMain=5
|C4F8EtchDelay=0.5@ 100      |C4F8EtchBoost=              |C4F8EtchMain=5
|SF6DepDelay=0.3@200        |SF6DepBoost=0.5@200        |SF6DepMain=15
|SF6DepDelay=0.3@ 200        |SF6DepBoost=0.5@ 200        |SF6DepMain=15
|SF6EtchDelay=2@15          |SF6EtchBoost=0.3@100        |SF6EtchMain=200
|SF6EtchDelay=2@ 15          |SF6EtchBoost=0.3@ 100        |SF6EtchMain=200
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|WCoilDep=2                |WCoilEtch=2                |WPlatenDep=1  
|WCoilDep=2                |WCoilEtch=2                |WPlatenDep=1  
|WPlatenEtchDelay=1@1      |WPlatenEtchBoost=1@100      |WPlatenEtchMain=1
|WPlatenEtchDelay=1@1      |WPlatenEtchBoost=1@ 100      |WPlatenEtchMain=1
|WClaritasDep=              |WClaritasEtch=       
|WClaritasDep=              |WClaritasEtch=       
|%CoilDepLoad=40            |%CoilDepTune=50            |%CoilEtchLoad=40                  |%CoilEtchTune=50
|%CoilDepLoad=40            |%CoilDepTune=50            |%CoilEtchLoad=40                  |%CoilEtchTune=50
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}}
}}
|}
|}
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==Overview of micro and nano fabrication steps - a guide to where you can find fabrication information in LabAdviser==
{| style="color: black;vertical-align:top" width="100%" border=0 cellpadding="4" cellspacing="0"
| colspan="2" |
|-
| style="width: 50%; vertical-align:top;"|
{| id="linkTable" border="1" cellpadding="0" cellspacing="0" style="text-align:center;"
! class="hideImage" style="display:none"| Front Image
|-
! class="hideImage" width="150" | Dope your sample [[file:jehanDope.png|10px|frameless ]]
|-
|}
| style="color:black; width: 50%; vertical-align: top;"|
| style="color:black; width: 50%; vertical-align: top"|
{| class="wikitable hideable hidden" border="1" cellspacing="0" cellpadding="0"  align="left" width="430px"
! colspan="3" style="text-align:left;" | [[image:Clean your sample.png|x100px|Clean your sample]] Clean your sample
|-
!Entry page in LabAdviser
!Techniques
!Materials
|-
|rowspan="5" valign="top" |[[Specific Process Knowledge/Wafer cleaning|Wafer cleaning]]
|Soap Sonic
|Removes dust and particles
|-
|7-up & Piranha
|Removes traces of organics and alkali ions
|-
|RCA
|Two step process to remove traces of organics and metals
|-
|5% HF
|Removes native oxide
|-
|IMEC
|Removing dust, traces of organics and alkali ions and slightly polish the surface.
Make the surface hydrophillic
|-
|}
{| class="wikitable hideable hidden" border="1" cellspacing="1" cellpadding="2"  align="left" width="430px"
!colspan="3" style="text-align:left;" | [[image:Dope your sample.png|x100px|Dope your sample]] Dope your sample
|-
|-
!Entry page in LabAdviser
!Techniques
!Materials
|-
|rowspan="5" valign="top"| [[Specific Process Knowledge/Doping|Doping]]
|Ion implant
|e.g. P, B, As 
|-
|[[Specific Process Knowledge/Thin film deposition/PECVD| PECVD]]
|Deposition of SiO2 or Si3N4 doped with P,B and Ge
|-
|[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|LPCVD ]]
|Deposition of PolySi doped with B or P
|-
|[[Specific Process Knowledge/Thermal Process/Dope with Boron|Predeposition and drive-in]]
|Doping Silicon wafers with boron
|-
|[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Predeposition and drive-in]]
|Doping Silicon wafers with phosphorus
|-
|}
|-
|}
----
<br>

Latest revision as of 09:20, 20 November 2024

The DREM processes

DREM 2kW micro

DREM 2kW micro
Recipe General Pressure Gases Generators Matching Results
C4F8 SF6 Coil Platen Coil Platen
T S/E Dp D B M D B M D B M Dp Dep L T L T Pressure Runs
H/L Cyc Et D B M D B M D B M Et D B M L T L T Keywords
DREM 2kW micro Pump to base, Clamp Substrate, home platen matching unit, stabilisation 8
0 D/E 1.2 100% 0.3@5 0.5@ 50 200 0.3@ 200 0.5@ 200 15 2 1 40 50 32.5 51.9
HF 3 100% 0.5@ 100 5 2@ 15 0.3@ 100 200 2 1@1 1@ 100 1 40 50 32.5 51.9
DREM 2kW micro Pump to base, Clamp Substrate, home platen matching unit, stabilisation 1
-19 D/E 1.2 100% 0.3 @5 0.5@ 50 200 0.3@ 200 0.5@ 200 15 2 1 40 50 32.5 51.9
HF 3 100% 0.5@ 100 5 2@ 15 0.3@ 100 200 2 1@1 1@ 100 1 40 50 32.5 51.9
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