Specific Process Knowledge/Thin film deposition/Deposition of Palladium: Difference between revisions

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<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


===Palladium deposition===
Palladium can be deposited by e-beam evaporation or DC sputtering at DTU Nanolab.


Palladium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment:  
==Sputtering of Palladium==
 
Palladium may be sputter deposited in the sputter-system (Lesker). See process results here:
 
 
*[[/Pd sputtering in Sputter System (Lesker) |Pd sputtering in Sputter System (Lesker)]]
 
==Equipment comparison==
In the chart below you can compare the different deposition equipment:  




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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific_Process_Knowledge/Thin_film_deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific_Process_Knowledge/Thin_film_deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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| E-beam deposition of Pd
| E-beam deposition of Pd
| E-beam deposition of Pd
| E-beam deposition of Pd
| Sputter deposition of Pd
| Sputter deposition of Pd
|-
|-
|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
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|Ar ion source
|Ar ion source
|none
|none
|RF Ar clean
|RF Ar clean
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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|10 Å - 600 nm*
|10 Å - 600 nm*
|10 Å - 600 nm*
|10 Å - 600 nm*
|10 Å - 600 nm*
|10 Å - ? ''discuss with staff''
|-
|-
|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
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|0.5 Å/s to 10Å/s
|0.5 Å/s to 10Å/s
|2 Å/s to 10Å/s
|2 Å/s to 10Å/s
|Up to 4.3 Å/s
| Not yet known - discuss with staff
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Batch size
! Batch size
|
|
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*Up to 6x4" wafers (deposition on one wafer at the time)
*Up to 6x4" wafers (deposition on one wafer at the time)
*smaller wafers and pieces
*smaller wafers and pieces
|
*1x4" wafer or
*1x6" wafer or
*several small samples
|
*Up to 10x4" or 6" wafers
*Many smaller pieces
|-
|-
|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
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*Metals
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
*Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
| Almost any that do not degas


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|
|
|
|
|
|

Latest revision as of 10:10, 9 June 2023

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal

Palladium deposition

Palladium can be deposited by e-beam evaporation or DC sputtering at DTU Nanolab.

Sputtering of Palladium

Palladium may be sputter deposited in the sputter-system (Lesker). See process results here:


Equipment comparison

In the chart below you can compare the different deposition equipment:


E-beam evaporation (Temescal) E-beam evaporation (Wordentec) Sputter deposition (Sputter-System (Lesker)) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Pd E-beam deposition of Pd Sputter deposition of Pd Sputter deposition of Pd
Pre-clean Ar ion source none RF Ar clean RF Ar clean
Layer thickness 10 Å - 600 nm* 10 Å - 600 nm* 10 Å - 600 nm* 10 Å - ? discuss with staff
Deposition rate 0.5 Å/s to 10Å/s 2 Å/s to 10Å/s Up to 4.3 Å/s Not yet known - discuss with staff
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller wafers and pieces
  • Up to 6x6" wafers (deposition on one wafer at the time)
  • Up to 6x4" wafers (deposition on one wafer at the time)
  • smaller wafers and pieces
  • 1x4" wafer or
  • 1x6" wafer or
  • several small samples
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed materials Almost any that do not degas
Comment

* If depositing more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.