Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE process trends: Difference between revisions
| (4 intermediate revisions by the same user not shown) | |||
| Line 2: | Line 2: | ||
=Some general process trends= | =Some general process trends= | ||
This page is | This page is gathering some general process trends and good advice for designing IBE recipes. So far these trends have been developed etching Si with resist as masking material and by etching some multilayered films. The work has been done by ''Kristian Hagsted Rasmussen @ nanolab before 2012.'' In the lower section you find optimization tips from Oxford Instruments. | ||
==Etch rate== | ==Etch rate== | ||
| Line 81: | Line 81: | ||
<br clear="all" /> | <br clear="all" /> | ||
=General tips for finding etching parameters (given by Oxford Instruments)= | =General tips for finding etching parameters (given by Oxford Instruments [https://plasma.oxinst.com/products/ion-beam/ionfab], used with permission)= | ||
One thing to remember is that the etch rate varies linearly with beam current while it varies exponentially with beam voltage. | One thing to remember is that the etch rate varies linearly with beam current while it varies exponentially with beam voltage. | ||
*Beam voltage – depends on application, 200-800eV. | *Beam voltage – depends on application, 200-800eV. | ||
| Line 98: | Line 98: | ||
#Set beam energy —a rough guide is, the higher the energy the rougher the surface as seen on an SEM. 500 eV is considered medium energy.<br> | #Set beam energy —a rough guide is, the higher the energy the rougher the surface as seen on an SEM. 500 eV is considered medium energy.<br> | ||
#Then starting with beam current of 300mA increase the value until you reach the value where the PR is getting burnt.<br> | #Then starting with beam current of 300mA increase the value until you reach the value where the PR is getting burnt.<br> | ||
#Adjust beam current to give optimum etch rate without overheating the sample.< | #Adjust beam current to give optimum etch rate without overheating the sample.<br> | ||
#Adjust Accelerator voltage to get uniformity. Note that as this will change beam divergence, the sample temperature will change. | #Adjust Accelerator voltage to get uniformity. Note that as this will change beam divergence, the sample temperature will change. | ||