Specific Process Knowledge/Thermal Process/Oxidation/Dry oxidation C1 furnace: Difference between revisions
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=Dry Oxidation in the C1 furnace= | |||
The C1 furnace can be used for dry oxidation of 4" and 6" wafers. | The C1 furnace can be used for dry oxidation of 4" and 6" wafers. | ||
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==Dry Oxidation uniformity for 4" wafers== | |||
A dry oxidation has been done with 30 | A dry oxidation has been done with 30 4" wafers in the quartz boat in the furnace to get an idea of how uniform the oxide layer is from wafer to wafer over the boat. | ||
The following parameters were used for the oxidation: | The following parameters were used for the oxidation: | ||
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After the oxidation, the oxide thickness was measured on all the wafers. | After the oxidation, the oxide thickness was measured on all the wafers. | ||
The graph below shows the measured oxide thickness as function of the wafer slot. Slot 1 is furthest inside the furnace, towards the service area. For each wafer the oxide thickness has been measured in 49 points, and the average oxide thickness has been calculated. | |||
[[image:C1thickness-vs-slot.jpg|450x450px|left|thumb|xxx]] | |||
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[[image:C1thickness.jpg|500x500px|left|thumb|xxx]] | |||
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''The oxidation and measurements were done by Martin Ommen (former DTU Nanotech).'' | ''The oxidation and measurements were done by Martin Ommen (former DTU Nanotech).'' | ||