Specific Process Knowledge/Etch/Titanium Oxide: Difference between revisions

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 *[[/ICP metal|Titanium Oxide etch using ICP metal]]
+*Titanium Oxide etch using BHF
+==Comparison of Titanium Oxide (ALD) etch Methods ==
+{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
+|-
+|-
+|-style="background:silver; color:black"
+!
+!BHF
+!ICP Metal Etcher
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+!Generel description
+|Wet etch of TiO2 (ALD)
+|Dry etch of TiO2
+|-
+|-
+|-style="background:LightGrey; color:black"
+!Etch rate range
+|2,5 nm/min
+|
+*It has not been explored
+*current recipe ~8 nm/min
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+!Etch profile
+|
+*Isotropic
+|
+*Anisotropic
+|-
+|-
+|-style="background:LightGrey; color:black"
+!Substrate size
+|
+*
+*Any size (in beaker)
+|
+*Samples < 150 mm wafers on carrier
+*one 150 mm wafer at a time
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+!'''Allowed materials'''
+|In beaker:
+*Any material
+|
+*silicon, silicon oxides and nitrides
+*Al, Cr, Ti (incl. oxides and nitrides)
+*Ta, W, Nb (incl. oxides and nitrides)
+|-
+|}