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Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec: Difference between revisions

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'''<p style="color:red;">The Wordentec has been decomissioned in 2025. These results are kept for reference.</p>'''


= Silicon sputtering in the Wordentec=
= Silicon sputtering in the Wordentec=
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In November 2018 Rebecca Ettlinger and Patama Pholprasit tested Si sputter deposition in the Wordentec at '''500 W with a low sputter pressure of 2*10<sup>-3</sup> mbar''' together with Yannick Seis. The aim was a better uniformity of the sputtered film. See details in the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=167 Wordentec Process log].
It is thus possible to use a higher power together with a lower pressure, but please do not do this without consulting the [[mailto:thinfilm@nanolab.dtu.dk Thin Film group]].

Latest revision as of 22:21, 20 June 2025

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

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The Wordentec has been decomissioned in 2025. These results are kept for reference.

Silicon sputtering in the Wordentec

Silicon can be sputter deposited in the Wordentec as well as in the Sputter-System(Lesker) (details on sputtering Si in the Sputter-System Lesker here) and in the new Cluster Lesker (results here and here).


Parameters

Listed below are tried parameters, that can be used during Si deposition in the Wordentec. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness.

Do not use the power more than 180 W without consulting staff, since the Si target could break into a lot of small pieces.

Settings 1 Settings 2
Process type Sputtering Sputtering
Power 130W 170W
Sputter pressure 5*10-3 mbar 1*10-2 mbar
Rate About 0.7 Å/s About 0.6 Å/s
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