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[[Category: Equipment |Etch DRIE]]
[[Category: Equipment |Etch DRIE]]
[[Category: Etch (Dry) Equipment|DRIE]]
[[Category: Etch (Dry) Equipment|DRIE]]
<!--Checked for updates on 28/6-2023 - ok/jmli -->
<!--Checked for updates on 4/9-2025 - ok/jmli -->
{{contentbydryetch}}


=== Past configurations ===
=== Past configurations ===
==== Configuration valid from June 13 2022 to May 17 2023====
{{Template:Peg2configheader1
|TableHeader= 6: Currently valid June 13 2022 to May 17 2023
}}
{{Template:Peg2configcontent1
|ItemName= Available gasses and gas chemistry
|ItemConfiguration= '''Available gasses:'''
* SF<sub>6</sub>: 50 sccm
* O<sub>2</sub>: 50 sccm
* Ar: 283
* N<sub>2</sub>: 500 sccm
* He: 11 sccm
'''Not available:'''
* C<sub>4</sub>F<sub>8</sub> (H<sub>2</sub> currently fitted but closed) : 0 sccm
* CO<sub>2</sub>: (It is not in the software)
|ItemComment=OnlySF<sub>6</sub> and O<sub>2</sub> are used for Si, PR, and Cr etch. The rest is only make-up
}}
{{Template:Peg2configcontent1
|ItemName= Plasma source heaters
|ItemConfiguration=The following heaters in the plasma source are off:
* Plenum Heater
* Inner Heater
* Magnetic Confinement Heater
* Chamber Heater
|ItemComment= The temperature on the heaters in the plasma source are set to 20 degrees with a high tolerance. This essentially corresponds to powered off compared to default Pegasus temperatures which are in the 120-140 degrees range. The absence of fluorocarbons in the plasma makes it unnecessary to maintain a high temperature on the chamber walls in order to reduce polymer condensation (see below).
Always make sure that the temperature settings in the recipes are ''not'' enabled. Click [[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/TemperatureSettings |'''here''']] to have more information.
}}
{{Template:Peg2configcontent1
|ItemName= Carbon free plasmas
|ItemConfiguration= The process chamber does not have any carbon containing etch gasses. Therefore, polymer build-up on the chamber walls is not an issue. The 'carbon free' policy does not, however, apply to the choice of masking materials and CSAR, AZ and DUV resists are allowed.
|ItemComment=
}}
{{Template:Peg2configcontent1
|ItemName= Chamber conditioning and cleaning
|ItemConfiguration= Running long oxygen cleans is not necessary and must be avoided. Neither are shorter cleans between wafers.
|ItemComment= The absence of carbon containing etch gasses ensures that the process chamber is kept clean.
}}
{{Template:Peg2configcontent1
|ItemName= Recipes
|ItemConfiguration= In the past, only recipes in the 'std' folder were allowed to run. Now, you can develop your own recipes '''as long as they don't violate any of the limitations/restrictions and rules in this table.'''
|ItemComment= Be extremely careful with recipes in other folders than your own or the 'std' folder as they may no longer be safe to run because of hardware changes.
}}
{{Template:Peg2configcontent1
|ItemName= Etch of chromium and silicon nitrides
|ItemConfiguration= Recipes for etching chromium and silicon nitrides have been developed.
|ItemComment= Etching the two materials is only allowed for processes in combination with other Pegasus 2 specific recipes such as the CORE recipe. '''Always consult with Nanolab staff.'''
}}
{{Template:Peg2configcontent1
|ItemName= Electrostatic clamping, chip bonding with Galden oil and helium backside cooling are no longer being used.
|ItemConfiguration= The processes run in Pegasus 2 operate at such low powers that they do not require very efficient cooling. It has therefore been decided that the following options/procedures
* Electrostatic clamping of carriers/substrates
* Helium backside cooling
* Using bonding procedures such as droplets of Galden oil to increase thermal contact between chips and carrier
will no longer be required.
|ItemComment= So far we have not seen any changes in the results but if you do, please contact Nanolab staff.
}}
{{Template:Peg2configcontent1
|ItemName= Background knowledge required for safe operation
|ItemConfiguration= The users and supervisors of Pegasus-2 must carefully read the 4 papers listed in the comments in order to have a correct understanding of the etch process and experimental procedure and how it relates to the Bosch etch performance.
|ItemComment= See the papers in the [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2#Publications_on_the_CORE_process |section below]].
}}
|}


==== Configuration valid from May 25 2022 to June 13 2022 ====
==== Configuration valid from May 25 2022 to June 13 2022 ====


{{Template:Peg2configheader1
{{Template:Peg2configheader1
|TableHeader= Currently valid from May 25 2022 onwards
|TableHeader= 5: Currently valid from May 25 2022 onwards
}}
}}
{{Template:Peg2configcontent1
{{Template:Peg2configcontent1
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|ItemName= Background knowledge required for safe operation
|ItemName= Background knowledge required for safe operation
|ItemConfiguration= The users and supervisors of Pegasus-2 must carefully read the 4 papers listed in the comments in order to have a correct understanding of the etch process and experimental procedure and how it relates to the Bosch etch performance.  
|ItemConfiguration= The users and supervisors of Pegasus-2 must carefully read the 4 papers listed in the comments in order to have a correct understanding of the etch process and experimental procedure and how it relates to the Bosch etch performance.  
|ItemComment= Papers:
|ItemComment= See the papers in the [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2/OldConfig#Publications_on_the_CORE_process | section below]].
*[[media:Black silicon on demand.pdf | On the formation of black silicon in SF6-O2 plasma: The clear, oxidize, remove, and etch (CORE) sequence and black silicon on demand]]
*[[media:The CORE sequence.pdf | The CORE Sequence: A Nanoscale Fluorocarbon-Free Silicon Plasma Etch Process Based on SF<sub>6</sub>/O<sub>2</sub> Cycles with Excellent 3D Profile Control at Room Temperature ]]
*[[media:Ultrahigh aspect ratio etching and Cr mask.pdf | Ultrahigh aspect ratio etching of silicon in SF<sub>6</sub>-O<sub>2</sub> plasma: The clear-oxidize-remove etch (CORE) sequence and chromium mask]]
*[[media:Cr and CrOx etching using SF6 and O2 plasma.pdf | Cr and CrO<sub>x</sub> etching using SF<sub>6</sub> and O2 plasma]]


}}
}}
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|}
|}


==== Configuration and setup valid September 13 2021 to May 25 2022====
==== Configuration and setup valid September 13 2021 to May 25 2022====
Line 102: Line 166:


{{Template:Peg2configheader1
{{Template:Peg2configheader1
|TableHeader= Currently valid from September 13 2021 onwards
|TableHeader= 4: Currently valid from September 13 2021 onwards
}}
}}
{{Template:Peg2configcontent1
{{Template:Peg2configcontent1
Line 158: Line 222:
|ItemName= Background knowledge required for safe operation
|ItemName= Background knowledge required for safe operation
|ItemConfiguration= The users and supervisors of Pegasus-2 must carefully read the 4 papers listed in the comments in order to have a correct understanding of the etch process and experimental procedure and how it relates to the Bosch etch performance.  
|ItemConfiguration= The users and supervisors of Pegasus-2 must carefully read the 4 papers listed in the comments in order to have a correct understanding of the etch process and experimental procedure and how it relates to the Bosch etch performance.  
|ItemComment= Papers:
|ItemComment=See the papers in the [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2/OldConfig#Publications_on_the_CORE_process | section below]].
*[[media:Black silicon on demand.pdf | On the formation of black silicon in SF6-O2 plasma: The clear, oxidize, remove, and etch (CORE) sequence and black silicon on demand]]
*[[media:The CORE sequence.pdf | The CORE Sequence: A Nanoscale Fluorocarbon-Free Silicon Plasma Etch Process Based on SF<sub>6</sub>/O<sub>2</sub> Cycles with Excellent 3D Profile Control at Room Temperature ]]
*[[media:Ultrahigh aspect ratio etching and Cr mask.pdf | Ultrahigh aspect ratio etching of silicon in SF<sub>6</sub>-O<sub>2</sub> plasma: The clear-oxidize-remove etch (CORE) sequence and chromium mask]]
*[[media:Cr and CrOx etching using SF6 and O2 plasma.pdf | Cr and CrO<sub>x</sub> etching using SF<sub>6</sub> and O2 plasma]]
 
}}
}}


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|}
|}


==== Configuration and setup valid August 17 2021 to September 13 2021 ====
==== Configuration and setup valid August 17 2021 to September 13 2021 ====
Line 241: Line 298:
|ItemName= Background knowledge required for safe operation
|ItemName= Background knowledge required for safe operation
|ItemConfiguration= The users and supervisors of Pegasus-2 must carefully read the 4 papers listed in the comments in order to have a correct understanding of the etch process and experimental procedure and how it relates to the Bosch etch performance.  
|ItemConfiguration= The users and supervisors of Pegasus-2 must carefully read the 4 papers listed in the comments in order to have a correct understanding of the etch process and experimental procedure and how it relates to the Bosch etch performance.  
|ItemComment= Papers:
|ItemComment= See the papers in the [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2/OldConfig#Publications_on_the_CORE_process | section below]].
*[[media:Black silicon on demand.pdf | On the formation of black silicon in SF6-O2 plasma: The clear, oxidize, remove, and etch (CORE) sequence and black silicon on demand]]
*[[media:The CORE sequence.pdf | The CORE Sequence: A Nanoscale Fluorocarbon-Free Silicon Plasma Etch Process Based on SF<sub>6</sub>/O<sub>2</sub> Cycles with Excellent 3D Profile Control at Room Temperature ]]
*[[media:Ultrahigh aspect ratio etching and Cr mask.pdf | Ultrahigh aspect ratio etching of silicon in SF<sub>6</sub>-O<sub>2</sub> plasma: The clear-oxidize-remove etch (CORE) sequence and chromium mask]]
*[[media:Cr and CrOx etching using SF6 and O2 plasma.pdf | Cr and CrO<sub>x</sub> etching using SF<sub>6</sub> and O2 plasma]]
 
}}
}}
|}
|}
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|ItemName= Background knowledge required for safe operation
|ItemName= Background knowledge required for safe operation
|ItemConfiguration= Users and supervisors of Pegasus-2 should carefully read the 3 papers listed in the comments in order to have a correct understanding of the etch process and experimental procedure and how it relates to the Bosch etch performance.  
|ItemConfiguration= Users and supervisors of Pegasus-2 should carefully read the 3 papers listed in the comments in order to have a correct understanding of the etch process and experimental procedure and how it relates to the Bosch etch performance.  
|ItemComment= Papers:
|ItemComment= See the papers in the [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2/OldConfig#Publications_on_the_CORE_process | section below]].
*[[media:Black silicon on demand.pdf | On the formation of black silicon in SF6-O2 plasma: The clear, oxidize, remove, and etch (CORE) sequence and black silicon on demand]]
*[[media:The CORE sequence.pdf | The CORE Sequence: A Nanoscale Fluorocarbon-Free Silicon Plasma Etch Process Based on SF<sub>6</sub>/O<sub>2</sub> Cycles with Excellent 3D Profile Control at Room Temperature ]]
*[[media:Ultrahigh aspect ratio etching and Cr mask.pdf | Ultrahigh aspect ratio etching of silicon in SF<sub>6</sub>-O<sub>2</sub> plasma: The clear-oxidize-remove etch (CORE) sequence and chromium mask]]
}}
}}
|}
|}
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As of December 2020  there is not yet any old configurations.
As of December 2020  there is not yet any old configurations.


=== Access to Pegasus 2 configuration templates ===
=== Publications on the CORE process ===


; Nguyen, V. T. et al.: On the formation of black silicon in SF6-O2 plasma: The clear, oxidize, remove, and etch (CORE) sequence and black silicon on demand
: 2020 Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 38(4), [043004].
: https://doi.org/10.1116/6.0000196


'''Pegasus 2 configuration table version 1'''
; Vy Thi Hoang Nguyen et al.: The CORE Sequence: A Nanoscale Fluorocarbon-Free Silicon Plasma Etch Process Based on SF6/O2 Cycles with Excellent 3D Profile Control at Room Temperature
: 2020 ECS J. Solid State Sci. Technol. 9 024002
: https://doi.org/10.1149/2162-8777/ab61ed


* '''Table header''': [[Template:Peg2configheader1]]
; Vy Thi Hoang Nguyen et al.: Ultrahigh aspect ratio etching of silicon in SF<sub>6</sub>-O<sub>2</sub> plasma: The clear-oxidize-remove etch (CORE) sequence and chromium mask
: 2020 Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 38(5), [053002]
: https://doi.org/10.1116/6.0000357


* '''Table content''': [[Template:Peg2configcontent1]]
; Vy Thi Hoang Nguyen et al.: Cr and CrO<sub>x</sub> etching using SF<sub>6</sub> and O2 plasma
: 2021 Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 39(3), [032201]
: https://doi.org/10.1116/6.0000922
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