Specific Process Knowledge/Thin film deposition/Deposition of Chromium: Difference between revisions
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<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i> | |||
== Studies of Cr deposition processes == | |||
[[/Deposition of Chromium|Uniformity of Cr layers]] - ''Uniformity of Cr layers deposited with different methods and settings'' | |||
[[/Sputtering of Cr in Wordentec|Sputtering of Cr in Wordentec]] - ''Settings and deposition rates'' | |||
[[/Sputtering of Cr in Sputter System (Lesker)|Sputtering of Cr in Sputter system (Lesker)]] - ''Settings and deposition rates'' | |||
[[/Sputtering of Cr in Cluster Lesker PC1|Sputtering of Cr in Sputter-system Metal-Oxide (PC1)]] - ''Settings and deposition rates'' | |||
[[/Sputtering of Cr in Cluster Lesker PC3|Sputtering of Cr in Sputter-system Metal-Nitride (PC3)]] - ''Settings and deposition rates'' | |||
[[/Thermal evaporation of Cr in Thermal evaporator|Thermal evaporation of Cr in Thermal evaporator]] - ''Settings and deposition results'' | |||
[[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cr:_High_tensile_stress|Stress in sputtered Cr films]] - ''Extremely high tensile stress in Cr films deposited at high temperature'' | |||
== Chromium deposition == | == Chromium deposition == | ||
Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment. | Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment. | ||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! E-beam evaporation and sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! E-beam evaporation and sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]]) | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Pre-clean | ! Pre-clean | ||
|Ar ion | |Ar ion gun (only in E-beam evaporator Temescal) | ||
|RF Ar clean | |RF Ar clean | ||
| | | | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Deposition rate | ! Deposition rate | ||
| | |1 Å/s to 10 Å/s | ||
| | |1 Å/s to 10 Å/s (e-beam) | ||
Sputtering: Depends on process parameters. See [[Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Sputtering of Cr in Wordentec|here]] and process log. | Sputtering: Depends on process parameters. See [[Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Sputtering of Cr in Wordentec|here]] and process log. | ||
|1 Å/s | |1 Å/s | ||
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*6x6" wafers | *6x6" wafers | ||
| | | | ||
* | *4x 2" wafer or | ||
*1x 4" wafers or | *1x 4" wafers or | ||
*1x6" wafer or | |||
*Several smaller pieces | *Several smaller pieces | ||
*In theory up to 8" wafer (or 2x4" wafer) but uniformity will be bad | |||
| | | | ||
*1x6" wafers | *1x6" wafers | ||
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|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Allowed | ! Allowed materials | ||
| | | | ||
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]. | |||
| | |||
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet]. | |||
| | | | ||
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet]. | |||
| | | | ||
* Silicon wafers | * Silicon wafers | ||
* | * and almost any | ||
| | | | ||
* | *Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3] | ||
* Special carrier for III-V materials. | |||
* | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Comment | ! Comment | ||
| Takes approx. 20 min to pump down | | Takes approx. 20 min to pump down | ||
| Takes approx. 1 hour to pump down | | Takes approx. 1 hour to pump down | ||
| | | Takes approx. 20 min to pump down | ||
| | | | ||
| Takes approx. 5 min to pump down load lock and 6 min for transfer to processing chamber | | Takes approx. 5 min to pump down load lock and 6 min for transfer to processing chamber | ||
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|} | |} | ||
'''*''' ''For thicknesses above | '''*''' ''For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material.'' | ||
Latest revision as of 14:26, 19 January 2024
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
Studies of Cr deposition processes
Uniformity of Cr layers - Uniformity of Cr layers deposited with different methods and settings
Sputtering of Cr in Wordentec - Settings and deposition rates
Sputtering of Cr in Sputter system (Lesker) - Settings and deposition rates
Sputtering of Cr in Sputter-system Metal-Oxide (PC1) - Settings and deposition rates
Sputtering of Cr in Sputter-system Metal-Nitride (PC3) - Settings and deposition rates
Thermal evaporation of Cr in Thermal evaporator - Settings and deposition results
Stress in sputtered Cr films - Extremely high tensile stress in Cr films deposited at high temperature
Chromium deposition
Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment.
E-beam evaporation E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) | E-beam evaporation and sputter deposition (Wordentec) | Thermal evaporation (Thermal evaporator) | Sputter deposition (Lesker sputterer) | Sputter deposition ((Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ) | |
---|---|---|---|---|---|
General description | E-beam deposition of Chromium | E-beam and sputter deposition of Chromium | Thermal deposition of Chromium | Sputter deposition of Chromium | Sputter deposition of Chromium |
Pre-clean | Ar ion gun (only in E-beam evaporator Temescal) | RF Ar clean | RF Ar clean | RF Ar clean | |
Layer thickness | 10Å to 1µm* | 10Å to 1µm* | 80 nm | at least up to 200 nm | at least up to 200 nm |
Deposition rate | 1 Å/s to 10 Å/s | 1 Å/s to 10 Å/s (e-beam)
Sputtering: Depends on process parameters. See here and process log. |
1 Å/s | Depends on process parameters. At least up to 1.48 Å/s. See process log. | Depends on process parameters. |
Batch size |
|
|
|
|
|
Allowed materials |
Almost any that does not degas. See the cross-contamination sheet. |
Almost any that does not degas. See the cross-contamination sheet. |
Almost any that does not degas. See the cross-contamination sheet. |
|
|
Comment | Takes approx. 20 min to pump down | Takes approx. 1 hour to pump down | Takes approx. 20 min to pump down | Takes approx. 5 min to pump down load lock and 6 min for transfer to processing chamber |
* For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material.