Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8")

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Oxidation (8") furnace (E1)

Oxidation (8") furnace (E1). Positioned in cleanroom E-6/ Photo: DTU Nanolab internal

The Oxidation (8") furnace (E1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. Both 150 mm and 200 mm wafers can be processed in the furnace.

The Oxidation (8") furnace is the top furnace tube in the furnace E-stack, which positioned in cleanroom E-6. Most of wafers have to be RCA cleaned, before they enter the furnace. The only exceptions are brand new wafers, wafers from the A-stack furnaces, wafers from C1 furnace, wafers from the LPCVD furnaces (B- and other E-stack furnaces) and wafers from PECVD4 (not III-V materials). Please check the cross contamination information in LabManager, before you use the furnace.

Oxygen is using as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.

Annealing can be done for silicon wafers with layers of e.g. silicon oxide, silicon nitride, polysilicon or BPSG glass (deposited in PECVD4). The annealing recipes are named e.g. "ANN1000" (for annealing at 1000 ^oC).

The oxidation and annealing temperature can be up to 1100 ^oC.

The user manual, technical information and contact information can be found in LabManager:

Oxidation (8") furnace (E1)

Process knowledge

• Wet oxidation. More information can be found here
• Dry oxidation. More information can be found on the oxidation page
• Annealing. More information can be found on the annealing page

Overview of the performance of Oxidation (8") furnace and some process related parameters

Purpose	Oxidation of 150 mm and 200 mm wafers Annealing of 150 mm and 200 mm wafers	Annealing: Using N2 Oxidation: Dry oxidation using O2 Wet oxidation using DI water steam injection system (Bronkhorst)
Performance	Film thickness	Dry SiO2: ~ 0 nm to 300 nm (it takes too long to grow a thicker dry oxide layers) Wet SiO2: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 oC)
Process parameter range	Process Temperature	800 - 1100 oC
	Process pressure	1 atm (no vacuum)
	Gas flows	N2: 0 - 30 slm O2: 0 - 30 slm Steamer flow : 0 - 12.5 slm (9.5 slm in standard recipes)
Substrates	Batch size	1 - 50 150 mm wafers 1 - 50 200 mm wafers
	Substrate materials allowed	New silicon wafers Silicon wafers with layers of silicon oxide or silicon nitride (processed wafers should be RCA cleaned) Wafers from A-stack furnaces Wafers from C1 furnace Wafers from the LPCVD furnaces (B- and other E-stack furnaces) Wafers from PECVD4 (not III-V materials)