Specific Process Knowledge/Thin film deposition/Deposition of NiV: Difference between revisions

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|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System Lesker]])
|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System Lesker]])
|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
|-  
|-  
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
| Sputter deposition of NiV
| Sputter deposition of NiV
| Sputter deposition of NiV
| Sputter deposition of NiV
| Sputter deposition of NiV
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|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
| none
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
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|About 10Å to 5000Å
|About 10Å to 5000Å
|About 10Å to 5000Å
|About 10Å to 5000Å
|About 10Å to 5000Å
|-
|-


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|Depending on process parameters(normally less than 1 A/sec).
|Depending on process parameters(normally less than 1 A/sec).
|Depending on process parameters(normally less than 1 A/sec).
|Depending on process parameters(normally less than 1 A/sec).
|Depending on process parameters(normally less than 1 A/sec).
|-
|-


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*1x4" wafer or
*1x4" wafer or
*1x6" wafer
*1x6" wafer
|
*Up to 10x4" or 6" wafers
*Many smaller pieces
|
|
*24x2" wafers or  
*24x2" wafers or  
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* Quartz wafers
* Quartz wafers
* Pyrex wafers(No substrate heating)  
* Pyrex wafers(No substrate heating)  
|
* Almost any that do not outgas.
|  
|  
* Silicon wafers  
* Silicon wafers  
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* Metals  
* Metals  
* Carbon
* Carbon
|
* Almost any that do not outgas.
|
|
* Silicon
* Silicon
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* Metals  
* Metals  
* Carbon  
* Carbon  
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Target size
! Target size


| 2 inch sputter target  
| 2 inch sputter target  
| 3 inch sputter target
(or in special cases 4 inch)
| 6 inch sputter target  
| 6 inch sputter target  
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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|  
|  
*Sputter target with NiV composition: Ni/V 93/7%
*Sputter target with NiV composition: Ni/V 93/7%
*Substrate rotation
*Substrate RF Bias (optional)
|
*Sputter target with NiV composition:  Ni/V 93/7%
*Substrate rotation
*Substrate rotation
*Substrate RF Bias (optional)
*Substrate RF Bias (optional)
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*No substrate rotation
*No substrate rotation
*No substrate RF Bias  
*No substrate RF Bias  
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"

Latest revision as of 09:27, 9 June 2023

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Sputtering of Nickel Vanadium

Nickel Vanadium may be sputter deposited in either Sputter-system (Lesker) or Wordentec. The following pages show both process parameters and data on surface roughness of the deposited films


In the chart below you can compare the different deposition equipment.

Sputter deposition (Sputter-System Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) Sputter deposition (Wordentec)
General description Sputter deposition of NiV Sputter deposition of NiV Sputter deposition of NiV
Pre-clean RF Ar clean RF Ar clean none
Layer thickness About 10Å to 5000Å About 10Å to 5000Å About 10Å to 5000Å
Deposition rate Depending on process parameters(normally less than 1 A/sec). Depending on process parameters(normally less than 1 A/sec). Depending on process parameters(normally less than 1 A/sec).
Batch size
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
Allowed substrates
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers(No substrate heating)
  • Almost any that do not outgas.
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
  • Almost any that do not outgas.
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon


Target size 2 inch sputter target 3 inch sputter target

(or in special cases 4 inch)

6 inch sputter target


Comment
  • Sputter target with NiV composition: Ni/V 93/7%
  • Substrate rotation
  • Substrate RF Bias (optional)
  • Sputter target with NiV composition: Ni/V 93/7%
  • Substrate rotation
  • Substrate RF Bias (optional)
  • Sputter target with NiV composition: Ni/V 93/7%
  • No substrate rotation
  • No substrate RF Bias
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