Specific Process Knowledge/Etch/Aluminum Oxide: Difference between revisions

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Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.  
Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.  
Chemical etching can be done using HF (160nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al.  
Chemical etching can be done using BHF (60nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al.  
We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.
We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.



Latest revision as of 16:36, 6 February 2023

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.

Feedback to this page: click here

Etching Al2O3 can be done both chemically (wet) and by dry etching. Chemical etching can be done using BHF (60nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al. We have done some test of Al2O3 in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.