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[[Category: Equipment |Lithography descum]]
[[Category: Equipment|Lithography descum]]
[[Category: Lithography|Descum]]
[[Category: Lithography|Descum]]


==Descum results==
__TOC__
 
===[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip#Plasma_asher Plasma asher 1]===
 
[[image:Descum Results aug 2019.png|right|frame|400x400px| Descum results plasma asher 1]]
 


Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.
= Descum Comparison Table =
 
{| class="wikitable"
Note: Plasma asher was cold before use
 
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
! colspan="4" | Settings
! colspan="6" | Etched Thickness (nm)
|-
|-
| colspan="4" |
!
! colspan="6" | ashing time (min)
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
|- style="background:LightGrey"
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher 4|Plasma Asher 4 (Clean)]]
|| Recipe || O2 flow || N2 flow || Power
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
| 1 || 2 || 5 || 7 || 10 || 10
|-
|-
| 1 || 70 || 70 || 150 || 14,2 || 16,3 || 47,6 || 123,2 || 854,3 || 862,1
! scope=row style="text-align: left;" | Purpose
| Resist descum
|
*Resist stripping
*Resist descum
|
*Resist stripping
*Resist descum
|-
|-
| 2 || 500 || 0 || 200 ||  || 8,1 || 32,9 || 271,1 || 495,6 || 446,2
! scope=row style="text-align: left;" | Method
|-
| Plasma ashing
|}
| Plasma ashing
|}
| Plasma ashing
 
Conny Hjort & Jesper Hanberg
September 2019
 
Descum of different resists, AZ5214E, AZ701 MiR and AZ2020 nLOF, on a single 100mm wafer was tested. Wafer was placed vertically in the middle of glass carrier.
Recipe setting was the same as in previous test in September 2019: 70ml/min O2, 70 ml/min N2, power 150W, different ashing time 1, 2, 3, 5 and 7 min run. Plasma Asher was cold before use, we observed minor temperature rise during processing, but not more than 5 degrees. Starting chambers pressure was around 0, 5 mbar.
 
'''1,5 um AZ5214E resist'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
|-
|'''Etched Thickness (nm)'''|| 6,28 || 102,99 || 76,92 || N/A || N/A
|-
|-
|}
! scope=row style="text-align: left;" | Process gasses
|}
| O<sub>2</sub> (50 sccm)
'''1,5 um AZ5214E resist placed horizontally in the carrier'''
|
{| {{table}}
*O<sub>2</sub> (0-500 sccm)
| align="center" |  
*N<sub>2</sub> (0-500 sccm)
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|
*O<sub>2</sub> (0-500 sccm)
|- style="background:LightGrey"
*N<sub>2</sub> (0-500 sccm)
|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
*CF<sub>4</sub> (0-200 sccm)
|-  
|'''Etched Thickness (nm)'''|| 63,03 || 143,32 || 304,29  || 372,59 || N/A
|-
|-
|}
! scope=row style="text-align: left;" | Process power
|}
| 10-100 W (10-100%)
'''1,5 um AZ701MiR resist'''
| 150-1000 W
{| {{table}}
| 150-1000 W
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
|-  
|'''Etched Thickness (nm)'''|| 268,88 || 199,54 || 219,03 || 200,86 || 292,15
|-
|-
|}
! scope=row style="text-align: left;" | Substrate batch
|}
|
 
*Chips: several
'''1,5 um AZ 2020nLOF resist'''
*50 mm wafer: several
{| {{table}}
*100 mm wafer: 1
| align="center" |
|
{| border="1" cellspacing="1" cellpadding="2"  align="center"
*Chips: several
*50 mm wafer: several
|- style="background:LightGrey"
*100 mm wafer: 1-25
|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
*150 mm wafer: 1-25
|-  
*200 mm wafer: 1-25
|'''Etched Thickness (nm)'''|| 1,68 || 76,51 || 169,72 || 481,96 || 272,59
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|-
|-
! scope=row style="text-align: left;" | Substrate materials
|
*<span style="color:red">'''No polymer substrates'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*<span style="color:red">'''No III-V materials'''</span><br>
*Silicon substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
|}
<br clear="all" />
<br clear="all" />


{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher03}}


===[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_2 Plasma asher 2]===
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher04}}
[[image:descum_graf.jpg|right|frame|355x355px|Descum results plasma asher 2 - recipe 1]]
 
Descum of AZ  Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.
 
Experiment parameters:
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
| ||O2 flow|| N2 flow || Power
|-
|'''recipe 1''' || 100 || 100 || 150
|-
|'''recipe 2''' || 500 || 0 || 200
|-
|}
|}
 
 


'''recipe 1'''
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher05}}
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20
|-
|'''Etched Thickness (nm)'''|| 8,7 || 5,1 || 12,5 || 6,2 || 31,8 || 86,0 || 25,7 || 46,8 || 38,3 || 49,7 || 59,4 || 140,1 || 360,7
|-
|'''Initial temperature (°C)'''|| 28 || 21 || 31 || 21 || 22 || 28 || 25 || 24 || 21 || 24 || 24 || 22 || 22
|-
|}
|}


=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]


[[image:graf_descum-recipe2.png|right|frame|355x355px|Descum results plasma asher 2 - recipe 2]]


'''recipe 2'''
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1 ||2 ||3 ||4 ||5 ||6 ||7 ||8 ||10 ||12 ||15 ||20
|-
|'''Etched Thickness (nm)'''||8,1 ||9,4 ||16,8 ||55,2 ||44,0 ||47,5 ||42,5 ||55,1 ||85,3 ||122,4 ||184,8 ||305,9
|-
|'''Initial temperature (°C)'''||22 ||21 ||21 ||22 ||22 ||22 ||21 ||21 ||20 ||21 ||21 ||22
|-
|}
|}


We can observe linear dependance of etched material on time after etching 7 minutes and more (recipe 2).
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
 
<br clear="all" />
 
Jitka Urbánková & Jesper Hanberg
December 2019
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