Specific Process Knowledge/Bonding/Eutectic bonding: Difference between revisions
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==Eutectic Bonding== | ==Eutectic Bonding== | ||
Latest revision as of 11:35, 6 February 2023
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Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.
Eutectic Bonding
Eutectic bonding depends on a formation of an eutecticum in the bond interphase. This makes bonding of two substates by use of eg. a AuSi eutecticum possible at temperatures much lower than the actual melting points of either of the two (in this case bonding can be done at around 390oC). The bonding strecth is quite good, but far from as good as anodic bonding. Different eutectica have a different eutectic (bonding) temperature
| Eutecticum | Eutectic temperature | Bonding temperature in Wafer Bonder 02 |
|---|---|---|
| AuSi | 365oC | 390oC |
| AuSn | <300oC | 300oC |
| AuSnNi | . | . |