Specific Process Knowledge/Etch: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch click here]'''
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=Wet etch or dry etch=
=Wet etch or dry etch=
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== Choose material to be etched ==
== Choose material to be etched ==
[[:File:Copy of 180612_ III-V_exoticall_MH (2).xlsx | Dry etching of III-V materials and exotic materials in some other European Cleanroom facility]]
[http://labmanager.dtu.dk/view_binary.php?class=MiscDocument&id=2&name=180612_III-V_exoticall_MH.xlsx Dry etching of III-V materials and exotic materials in some other European Cleanroom facility login required]  


{| {{table}}
{| {{table}}
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*[[/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]]
*[[/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]]
*[[/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]]
*[[/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]]
*[[/DRIE-Pegasus| DRIE-Pegasus systems]]  
*[[/DRIE-Pegasus| DRIE-Pegasus systems:]]  
**[[/DRIE-Pegasus/Pegasus-1| DRIE-Pegasus 1 (Si etching on 4" wafers)]]
**[[/DRIE-Pegasus/Pegasus-1| DRIE-Pegasus 1 (Si etching on 4" wafers)]]
**[[/DRIE-Pegasus/Pegasus-2| DRIE-Pegasus 2 (Tool dedicated to research)]]
**[[/DRIE-Pegasus/Pegasus-2| DRIE-Pegasus 2 (Dedicated for research applications)]]
**[[/DRIE-Pegasus/Pegasus-3| DRIE-Pegasus 3 (Si etching on 150 mm wafers)]]
**[[/DRIE-Pegasus/Pegasus-3| DRIE-Pegasus 3 (Si etching on 150 mm wafers)]]
**[[/DRIE-Pegasus/Pegasus-4| DRIE-Pegasus 4 (Etching of silicon based dielectrics on 150 mm wafers)]]
**[[/DRIE-Pegasus/Pegasus-4| DRIE-Pegasus 4 (Etching of silicon based dielectrics on 150 mm wafers)]]
*[[/ICP Metal Etcher|ICP Metal Etch]]
*[[/ICP Metal Etcher|ICP Metal Etch]]
*[[/III-V ICP|III-V ICP]]
*[[/III-V ICP|III-V ICP]]
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*[[/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
*[[/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
|style="background: #DCDCDC"|
|style="background: #DCDCDC"|
*[[/Overview of chemicals|Overview of Chemicals]]
*[[/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
*[[/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
*[[/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]]
*[[/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]]

Latest revision as of 13:54, 6 February 2023

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Unless otherwise stated, this page is written by DTU Nanolab internal

Wet etch or dry etch

Etching at Nanolab Fabrication can be done either with wet chemistry or in dry etch equipment. In general wet chemistry etches isotropically in most materials were as dry etch techniques can be optimized to transfer a given mask pattern with vertical sidewalls (anisotropically) to a given substrate.

Advantages of wet chemistry over dry etch techniques are:

  • An often high etch rate difference of different materials giving raise to a high selectivity of the material to be etched compared to underlaying layers or mask materials.
  • Time saving: You can often etch 25 wafers at a time in wet chemistry where as dry etch equipment can only handle one wafer at a time.
  • Easy to start up new etch solutions.

Advantages of dry etch over wet chemistry:

  • Anisotropic etch can be done.
  • The etch does not attack the backside of the sample.

Dry etch Tool Package Training

Choose material to be etched

Dry etching of III-V materials and exotic materials in some other European Cleanroom facility login required

Dielectrica Semicondutors Metals Alloys Polymers
  • No results, use IBE

Choose Method/Equipment for the Etch

A Dry Etch Equipment A Wet Etch