Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions
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'''Feedback to this page''': '''[mailto: | '''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/A3_Phosphor_Drive-in_furnace click here]''' | ||
''This page is written by DTU Nanolab internal'' | |||
[[Category: Equipment |Thermal A3]] | [[Category: Equipment |Thermal A3]] | ||
[[Category: Thermal process|Furnace]] | [[Category: Thermal process|Furnace]] | ||
[[Category: Furnaces|A3]] | [[Category: Furnaces|A3]] | ||
==Phosphorus Drive-in furnace (A3)== | ==Phosphorus Drive-in furnace (A3)== | ||
[[Image:A3helstak.jpg|thumb|400x400px|Phosphorus Drive-in furnace (A3). Positioned in cleanroom B-1]] | [[Image:A3helstak.jpg|thumb|400x400px|Phosphorus Drive-in furnace (A3). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]] | ||
The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for thermal oxidation of silicon wafers. Furthermore, the furnace is used for phosphorus drive-in afte pre-deposition/doping or after boron ion implantation. | The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for thermal oxidation of silicon wafers. Furthermore, the furnace is used for phosphorus drive-in afte pre-deposition/doping or after boron ion implantation. | ||
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'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=82 Phosphorus Drive-in furnace (A3)]''' | '''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=82 Phosphorus Drive-in furnace (A3)]''' | ||
==Process knowledge== | ==Process knowledge== | ||
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!style="background:silver; color:black" align="center"|Performance | !style="background:silver; color:black" align="center"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness and quality | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide) | *Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide) | ||
*Wet oxide: ~ 0 nm - 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers) | *Wet oxide: ~ 0 nm - 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers) | ||
* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/A3 furnace break-down voltage measurement results|Break-down voltage measurement results]] | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||