File:RIE1 150nitride bgenitr 3.5min.tif: Difference between revisions

Latest revision as of 11:35, 21 September 2009

RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees.

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	Date/Time	Thumbnail	Dimensions	User	Comment
current	11:35, 21 September 2009		1,024 × 768 (71 KB)	Pvl (talk \| contribs)	RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees.
	11:24, 21 September 2009		1,024 × 768 (71 KB)	Pvl (talk \| contribs)	RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees.
	11:17, 21 September 2009	No thumbnail	1,024 × 768 (769 KB)	Pvl (talk \| contribs)	RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees.
	16:03, 7 September 2009	No thumbnail	1,024 × 768 (769 KB)	Pvl (talk \| contribs)	RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees.

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Revision as of 16:03, 7 September 2009 view source Pvl (talk \| contribs) Bureaucrats, danchip, Administrators 516 edits RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees.	Latest revision as of 11:35, 21 September 2009 view source Pvl (talk \| contribs) Bureaucrats, danchip, Administrators 516 edits uploaded a new version of "Image:RIE1 150nitride bgenitr 3.5min.tif": RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been
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