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''All contents by DTU Nanolab staff.''
=Indium tin oxide (ITO)=
Indium tin oxide (ITO) is the canonical degenerate n‑type transparent conducting oxide, combining high visible transmittance with low sheet resistance and a mature, scalable manufacturing base.
It is deposited industrially by magnetron sputtering for uniform, low-resistivity films. ITO is the workhorse transparent electrode for displays and touch panels, OLED/LED emitters, and a wide range of photovoltaic technologies; oxygen stoichiometry is tuned to balance conductivity and transparency.
In photonics, heavily doped ITO exhibits an epsilon-near-zero response in the near-infrared (around the 1.55 µm telecom band), enabling compact electro-optic modulators, plasmonic waveguides, and absorbers, as well as strong nonlinear/ultrafast effects.
ITO can also become superconducting at cryogenic temperatures when strongly reduced or ion-intercalated, with reported critical temperatures ranging from sub-kelvin to a few kelvin, depending on the carrier density and processing.
Beyond semiconductors and optics, ITO supports transparent heaters, low-emissivity and EMI-shielding window coatings, and ENZ-enabled NIR photodetectors. When even lower resistance is required, it is often paired with ultrathin metals in hybrid stacks, while retaining high transparency.


==Deposition of ITO==
==Deposition of ITO==
ITO (indium tin oxide) can be deposited by sputtering here at Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O<sub>2</sub>.
ITO (indium tin oxide) can be deposited by sputtering here at DTU Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O<sub>2</sub>.
 
We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here:


*[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|Deposition conditions and a few results]] for ITO deposited for the acceptance test of the Sputter-System Metal-Oxide(PC1)
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)|Sputtering of ITO in Sputter-System Metal-Oxide (PC1)]].


==Comparison of the methods for deposition of ITO==
==Comparison of the methods for deposition of ITO==
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!Generel description
!Generel description
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*RF sputtering of an ITO target
*RF sputtering of an ITO target - reactive sputtering possible
*Reactive RF or DC sputtering of an ITO target
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*RF sputtering of an ITO target - reactive sputtering possible
*RF sputtering of an ITO target - reactive sputtering possible (not recommended due to arching)
*Pulsed DC sputtering of an ITO target - reactive sputtering possible
*Pulsed DC sputtering of an ITO target - reactive sputtering possible
*Reactive HIPIMS (high-power impulse magnetron sputtering) of an ITO target
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*Not known
*Not known
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*In:Sn:O ~ 39:3:58 in the [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|acceptance test]]. Can be tuned by altering deposition conditions.
*In:Sn:O ~ 39:3:58. Can be tuned by altering [[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Stoichiometry|deposition conditions]].
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* 0.5-2 nm/min
* 0.5-2 nm/min
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* at least up to ~ 12 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|see conditions]])
* at least up to ~ 10 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Deposition_rate|see conditions]])
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!Process Temperature
!Process Temperature
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* Up to 400 °C
* Up to 400 °C (tool limit)
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* Up to 600 °C
* Up to 600 °C (tool limit)
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