Specific Process Knowledge/Thin film deposition/Deposition of ITO: Difference between revisions

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==Deposition of ITO==
==Deposition of ITO==
ITO (indium tin oxide) can be deposited by sputtering here at Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O<sub>2</sub>.
ITO (indium tin oxide) can be deposited by sputtering here at DTU Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O<sub>2</sub>.
 
We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here:


*[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|Deposition conditions and a few results]] for ITO deposited for the acceptance test of the Sputter-System Metal-Oxide(PC1)
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)|Sputtering of ITO in Sputter-System Metal-Oxide (PC1)]].


==Comparison of the methods for deposition of ITO==
==Comparison of the methods for deposition of ITO==
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!Generel description
!Generel description
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*RF sputtering of an ITO target
*RF sputtering of an ITO target - reactive sputtering possible
*Reactive RF or DC sputtering of an ITO target
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*RF sputtering of an ITO target - reactive sputtering possible
*RF sputtering of an ITO target - reactive sputtering possible (not recommended due to arching)
*Pulsed DC sputtering of an ITO target - reactive sputtering possible
*Pulsed DC sputtering of an ITO target - reactive sputtering possible
*Reactive HIPIMS (high-power impulse magnetron sputtering) of an ITO target
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*Not known
*Not known
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*In:Sn:O ~ 39:3:58 in the [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|acceptance test]]. Can be tuned by altering deposition conditions.
*In:Sn:O ~ 39:3:58. Can be tuned by altering [[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Stoichiometry|deposition conditions]].
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* 0.5-2 nm/min
* 0.5-2 nm/min
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* at least up to ~ 12 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|see conditions]])
* at least up to ~ 10 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Deposition_rate|see conditions]])
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!Process Temperature
!Process Temperature
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* Up to 400 °C
* Up to 400 °C (tool limit)
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* Up to 600 °C
* Up to 600 °C (tool limit)
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Latest revision as of 10:38, 9 June 2023

Feedback to this page: click here

All contents by DTU Nanolab staff.


Deposition of ITO

ITO (indium tin oxide) can be deposited by sputtering here at DTU Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O2.

We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here:

Comparison of the methods for deposition of ITO

Sputter-System(Lesker) Sputter-System Metal-Oxide(PC1)
Generel description
  • RF sputtering of an ITO target - reactive sputtering possible
  • RF sputtering of an ITO target - reactive sputtering possible (not recommended due to arching)
  • Pulsed DC sputtering of an ITO target - reactive sputtering possible
Stoichiometry
  • Not known
Film Thickness
  • few nm - ~ 200 nm
  • few nm - ~ 1 μm
Deposition rate
  • 0.5-2 nm/min
Step coverage
  • unknown
  • unknown
Process Temperature
  • Up to 400 °C (tool limit)
  • Up to 600 °C (tool limit)
Substrate size
  • chips
  • 1x 100 mm wafer
  • 1x 150 mm wafer
  • chips
  • 10x 100 mm wafer
  • 10x 150 mm wafer
Allowed materials
  • almost any