Specific Process Knowledge/Thin film deposition/Deposition of ITO: Difference between revisions

Latest revision as of 10:38, 9 June 2023

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All contents by DTU Nanolab staff.

Deposition of ITO

ITO (indium tin oxide) can be deposited by sputtering here at DTU Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O₂.

We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here:

Sputtering of ITO in Sputter-System Metal-Oxide (PC1).

Comparison of the methods for deposition of ITO

	Sputter-System(Lesker)	Sputter-System Metal-Oxide(PC1)
Generel description	RF sputtering of an ITO target - reactive sputtering possible	RF sputtering of an ITO target - reactive sputtering possible (not recommended due to arching) Pulsed DC sputtering of an ITO target - reactive sputtering possible
Stoichiometry	Not known	In:Sn:O ~ 39:3:58. Can be tuned by altering deposition conditions.
Film Thickness	few nm - ~ 200 nm	few nm - ~ 1 μm
Deposition rate	0.5-2 nm/min	at least up to ~ 10 nm/min (see conditions)
Step coverage	unknown	unknown
Process Temperature	Up to 400 °C (tool limit)	Up to 600 °C (tool limit)
Substrate size	chips 1x 100 mm wafer 1x 150 mm wafer	chips 10x 100 mm wafer 10x 150 mm wafer
Allowed materials	almost any	almost any that does not degas. Note special carrier for III-V materials. See cross-contamination sheet.

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+''All contents by DTU Nanolab staff.''
 ==Deposition of ITO==
-ITO (indium tin oxide) can be deposited by sputtering here at Nanolab. An ITO target is used and it may be sputtered either by non-reactively in Ar or reactively in a mixture of Ar and O<sub>2</sub>.
+ITO (indium tin oxide) can be deposited by sputtering here at DTU Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O<sub>2</sub>.
+We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here:
-*[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|Deposition conditions and a few results]] for ITO deposited for the acceptance test of the Sputter-System Metal-Oxide(PC1)
+*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)|Sputtering of ITO in Sputter-System Metal-Oxide (PC1)]].
 ==Comparison of the methods for deposition of ITO==
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 !Generel description
 |
-*RF sputtering of an ITO target
+*RF sputtering of an ITO target - reactive sputtering possible
-*Reactive RF or DC sputtering of an ITO target
 |
-*RF sputtering of an ITO target - reactive sputtering possible
+*RF sputtering of an ITO target - reactive sputtering possible (not recommended due to arching)
 *Pulsed DC sputtering of an ITO target - reactive sputtering possible
-*Reactive HIPIMS (high-power impulse magnetron sputtering) of an ITO target
 |-
@@ Line 36: / Line 38: @@
 *Not known
 |
-*In:Sn:O ~ 39:3:58 in the [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|acceptance test]]. Can be tuned by altering deposition conditions.
+*In:Sn:O ~ 39:3:58. Can be tuned by altering [[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Stoichiometry|deposition conditions]].
 |-
@@ Line 54: / Line 56: @@
 * 0.5-2 nm/min
 |
-* at least up to ~ 12 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|see conditions]])
+* at least up to ~ 10 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Deposition_rate|see conditions]])
 |-
@@ Line 69: / Line 71: @@
 !Process Temperature
 |
-* Up to 400 °C
+* Up to 400 °C (tool limit)
 |
-* Up to 600 °C
+* Up to 600 °C (tool limit)
 |-