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== Post CMP Cleaner) ==
== Post CMP Cleaner) ==


[[image:Cmp_picture.jpg|400px|right|thumb|The Post CMP CLeaner in cleanroom A-5]]
[[image:post cmp cleaner.jpg|400px|right|thumb|The Post CMP CLeaner in cleanroom A-5]]


The post CMP Cleaner is designed for removing slurry residues from polishing wafers. After the Post CMP cleaner is the recommended cleaning tool after using the '''[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Back-end_processing/Polisher_CMP Polisher CMP]'''.
The post CMP Cleaner is designed for removing slurry residues from polishing wafers. The Post CMP cleaner is the recommended cleaning tool after using the '''[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Back-end_processing/Polisher_CMP Polisher CMP]'''.




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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>Polisher/Lapper</b>
|style="background:WhiteSmoke; color:black"|<b>Post CMP Cleaner</b>
<!-- |style="background:WhiteSmoke; color:black"|<b>Equipment 2</b> -->
<!-- |style="background:WhiteSmoke; color:black"|<b>Equipment 2</b> -->
|-
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"|  
|style="background:LightGrey; color:black"|  
Polishing of
Cleaning of
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon
*Samples from the CMP
*SiO2
<!-- |style="background:WhiteSmoke; color:black"|
<!-- |style="background:WhiteSmoke; color:black"|
*Purpose 1
*Purpose 1
Line 36: Line 37:
*Purpose 3 -->
*Purpose 3 -->
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
 
|style="background:LightGrey; color:black"| 20x20mm substrate
|style="background:WhiteSmoke; color:black"|
*Removal rate: 400nm/min
*Thickness accuracy: +/- ? µm
*Thickness homogeneity: +/- ? µm
*Roughness: +/- ? µm
<!-- |style="background:WhiteSmoke; color:black"|
*Performance range 1
*Performance range 2
*Performance range 3 -->
|-
|style="background:LightGrey; color:black"|100mm substrate
|style="background:WhiteSmoke; color:black"|
*Removal rate: ~ 60 nm/min
*Thickness accuracy: ? µm
*Thickness homogeneity: ? µm
*Roughness: +/- ? µm
<!-- |style="background:WhiteSmoke; color:black"|
*Performance range -->
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range
|style="background:LightGrey; color:black"|Polishing liquid
|style="background:WhiteSmoke; color:black"|
*SF1 Polishing Fluid
|-
|-
|style="background:LightGrey; color:black"|Polishing cloths
|style="background:LightGrey; color:black"|Mechanical Cleaning
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Chemcloth Polishing Cloths
*Brush Cleaning
|-
|-
|style="background:LightGrey; color:black"|Rotation
|style="background:LightGrey; color:black"|Power
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Plate
*Megasonic Power from 0-40 W (in water)
*Head/Puck
|-
|-
|style="background:LightGrey; color:black"|Arm sweep
|style="background:LightGrey; color:black"|Arm sweep
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Polishing: 20% (inner) - 100% (outer)
*4" and 6" (20x20mm and 2" run with a 4" sweep)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
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|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon
*Silicon
*Polysilicon
*Silicon Oxide
*Glass/Quartz
*Glass/Quartz
<!-- |style="background:WhiteSmoke; color:black"|
<!-- |style="background:WhiteSmoke; color:black"|

Latest revision as of 16:06, 10 June 2025

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

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Post CMP Cleaner)

The Post CMP CLeaner in cleanroom A-5

The post CMP Cleaner is designed for removing slurry residues from polishing wafers. The Post CMP cleaner is the recommended cleaning tool after using the Polisher CMP.


The user manual, user APV, technical information and contact information can be found in LabManager:

The Post CMP Cleaner in LabManager

Equipment performance and process related parameters

Equipment Post CMP Cleaner
Purpose

Cleaning of

  • Samples from the CMP
Process parameter range
Mechanical Cleaning
  • Brush Cleaning
Power
  • Megasonic Power from 0-40 W (in water)
Arm sweep
  • 4" and 6" (20x20mm and 2" run with a 4" sweep)
Substrates Sample size
  • one 20x20mm piece
  • one 50 mm wafer
  • one 2" wafer
  • one 100 mm wafer
  • one 150 mm wafer
Allowed materials
  • Silicon
  • Polysilicon
  • Silicon Oxide
  • Glass/Quartz


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