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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker click here]'''
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker click here]'''
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


[[Category: Equipment|Thin film Sputter deposition Lesker]]
[[Category: Equipment|Thin film Sputter deposition Lesker]]
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== LESKER Sputter Tool==
== LESKER Sputter Tool==


The purpose of the "Sputter-system (Lesker)" is to deposit magnetic metals and dielectrica on a single 4" or 6" wafer at a time.
The purpose of the Sputter-System (Lesker) is to deposit magnetic metals and dielectrica on a single 4" or 6" wafer at a time.


It can be a problem to take wafers from the sputter system and into the other machines in the cleanroom since the sputter system is not very clean. In principle sputtering should therefore be the last step before you take your wafers out of the cleanroom. If you need to process your wafers further please contact the Thin Film group so they can help you.
It can be a problem to take wafers from the sputter system and into the other machines in the cleanroom since the sputter system is not very clean. In principle sputtering should therefore be the last step before you take your wafers out of the cleanroom. If you need to process your wafers further please contact the Thin Film group so they can help you.
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|-
|-
|}
|}
==Overview of the performance of Sputter-System(Lesker) and some process related parameters==
{| border="2" cellspacing="0" cellpadding="10"
|-
!style="background:silver; color:black;" align="left"|Purpose
|style="background:LightGrey; color:black"|Deposition of magnetic metals and dielectrica ||style="background:WhiteSmoke; color:black"|
*Sputtering of magnetic metals and Silicon
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
*Material dependent but generally up to hundreds of nm
|-
|style="background:LightGrey; color:black"|Deposition rates
|style="background:WhiteSmoke; color:black"|
*See [[#Relative Sputter rates |table]] below
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
* usually room temp
* Sample can be heated to more than 400&deg;C *
|-
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
*3-10 mTorr
|-
|style="background:LightGrey; color:black"|Process Gases
|style="background:WhiteSmoke; color:black"|
*Ar
*N<math>_2</math>
*O<math>_2</math>
*2%O<math>_2</math> in Ar
* mixtures of the above
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*chips
*4"
*6"
|-
| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:WhiteSmoke; color:black"|
*Silicon wafers
*and almost any other
|-
| style="background:LightGrey; color:black"|Material allowed on the substrate
|style="background:WhiteSmoke; color:black"|
*almost any
|-
|}
''*'' For temperatures above 400&deg;C, please contact thinfilm@danchip.dtu.dk, as higher temperatures may damage the machine.


==Film quality optimization==
==Film quality optimization==
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|-
|-
|Au||   0,125"|| 99,999% || 314 || 20
|Au||   0,125"|| 99,999% || 314 || 20
|-
|Co|| 0,0625"|| 99,95% || 126 || 10
|-
|-
|Cr||   0,125"|| 99,95% || 251 || 20
|Cr||   0,125"|| 99,95% || 251 || 20
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|-
|-
|Al/Cu99,5/0,5%||   0,250"|| 99,99% || 314 || 20
|Al/Cu99,5/0,5%||   0,250"|| 99,99% || 314 || 20
|-
|Co/Fe  50/50%||   0,0625"|| 99,95% || 126 || 10
|-
|Co/Fe  80/20%||   0,0625"|| 99,95% || 126 || 10
|-
|Co/Fe  90/10%||   0,0625"|| 99,95% || 126 || 10
|-
|-
|Cr2O3||   0,125" + Cu backing plate|| 99,8% || 63 || 0.5
|Cr2O3||   0,125" + Cu backing plate|| 99,8% || 63 || 0.5
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|-
|-
|Ni/Co50/50%|| 0,0625"|| 99,95% || 126 || 20
|Ni/Co50/50%|| 0,0625"|| 99,95% || 126 || 20
|-
|Ni/Co  50/50%|| 0,125"|| 99,95% || 126 || 20
|-
|-
|Ni/Fe    80/20%|| 0.125"|| 99,95% || 126 || 20
|Ni/Fe    80/20%|| 0.125"|| 99,95% || 126 || 20
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|style=background:WhiteSmoke; color:black|'''magn.'''
|style=background:WhiteSmoke; color:black|'''magn.'''
|style=background:WhiteSmoke; color:black|'''Relative depostion rate'''
|style=background:WhiteSmoke; color:black|'''Relative depostion rate'''
|-
|Co||Cobalt||Low||0.73
|-
|-
|Cr||Chromium||Med||0.87
|Cr||Chromium||Med||0.87
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|Ni80Fe20||Permalloy||High||0.80
|Ni80Fe20||Permalloy||High||0.80
|}
|}
==Overview of the performance of Sputter-System(Lesker) and some process related parameters==
{| border="2" cellspacing="0" cellpadding="10"
|-
!style="background:silver; color:black;" align="left"|Purpose
|style="background:LightGrey; color:black"|Deposition of various materials ||style="background:WhiteSmoke; color:black"|
* Metals including alloys and magnetic materials
* Dielectrica including silica and alumina.
* Semiconductors including silicon
* See tables above and ask staff if there is a material you would like to deposit which you do not see listed.
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
*Material dependent but generally up to hundreds of nm
|-
|style="background:LightGrey; color:black"|Deposition rates
|style="background:WhiteSmoke; color:black"|
*See [[#Relative Sputter rates |table]] above
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
* usually room temp
* We used to have sample heating to to more than 400&deg;. However, this is not possible at the moment.
* For sputtering with sample heating, please see [[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3) ]]
|-
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
*3-10 mTorr
|-
|style="background:LightGrey; color:black"|Process Gases
|style="background:WhiteSmoke; color:black"|
*Ar
*N<sub>2</sub>
*O<sub>2</sub>
*2 % O<sub>2</sub> in Ar
* mixtures of the above
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*chips
*4"
*6"
|-
| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:WhiteSmoke; color:black"|
*Silicon wafers
*and almost any other as long as it does not degas.
*See cross-contamination sheet [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=244]
|-
| style="background:LightGrey; color:black"|Material allowed on the substrate
|style="background:WhiteSmoke; color:black"|
*almost any as long as it does not degas.
|-
|}
==Maximum Power Calculation==
* <math>PD</math> - Power density (fundamental constant given by a supplier)
* <math>P(W)</math> - Power (W) from power supply
* <math>A(inch^2)</math> - Area of the target
------------------------------------------------------------------------------------------------------------
<math> PD=\frac{P(W)}{A(inch^2)}</math>  &#8658;    <math>P(W)=PD\cdot A(inch^2)=PD\cdot\frac{\pi d^2}{4}</math>
<ul>
<li><p> <b><span style="color: green">d=2" (2-inch target)</span></b> <math>P(W)=3.14\cdot PD</math>  </p></li>
<li><p> <b><span style="color: green">d=3" (3-inch target)</span></b> <math>P(W)=7.065\cdot PD</math>  </p></li>
<li><p> <b><span style="color: green">d=4" (4-inch target)</span></b> <math>P(W)=12.56\cdot PD</math>  </p></li>
<li><p> <b><span style="color: green">d=6" (6-inch target)</span></b> <math>P(W)=28.26\cdot PD</math>  </p></li>
</ul>
--------------------------------------------------
Value of the <math>PD</math> is material dependent and can be found on KJLC homepage
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