Specific Process Knowledge/Characterization/Lifetime scanner MDPmap: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap click here]''' | '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap click here]''' | ||
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[[image:Lifetimescanner04.jpg|400x400px|right|thumb|Lifetime scanner MPDmap, positioned in cleanroom F-2.]] | |||
[[image:Lifetimescanner04.jpg|400x400px|right|thumb|Lifetime scanner MPDmap, positioned in cleanroom | |||
== Microwave Detected Photoconductivity (MDP) == | == Microwave Detected Photoconductivity (MDP) == | ||
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length, L, can be measured also at very low injection levels with a spatial resolution limited | length, L, can be measured also at very low injection levels with a spatial resolution limited | ||
only by the diffusion length of the charge carriers. | only by the diffusion length of the charge carriers. | ||
'''The user manual, the APV and contact information can be found in LabManager:''' | |||
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=338 Lifetime scanner MPDmap info page in LabManager], | |||
== Performance information == | |||
'''Range of lifetimes''': 20 ns to several ms | '''Range of lifetimes''': 20 ns to several ms | ||
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'''Material''': Silicon, epitaxial layers, partially or fully processed wafers, compound semiconductors and beyond. | '''Material''': Silicon, epitaxial layers, partially or fully processed wafers, compound semiconductors and beyond. | ||
'''Measureable properties''': Carrier lifetime (steady state or non equilibrium (µ -PCD) selectable), photoconductivity (steady state) microwave Photoconductance Decay (µ-PCD) | '''Measureable properties''': Carrier lifetime (steady state or non equilibrium (µ -PCD) selectable), photoconductivity (steady state) microwave Photoconductance Decay (µ-PCD) | ||
==Equipment performance and process related parameters== | ==Equipment performance and process related parameters== | ||
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Latest revision as of 08:32, 10 May 2023
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Microwave Detected Photoconductivity (MDP)
Topographic visualisation of electrically active defects or materiel properties at almost any production stage, allows for process optimization and performance prediction of devices.
MDP is a contact less, non destructive measurement technology for the electrical characterization of a large variety of semiconductors. The mapping and visualization of so far not detectable defects was achieved by improving the sensitivity of a microwave detection system by several orders of magnitude. Electrical properties such as lifetime, τ, mobility, μ, and diffusion length, L, can be measured also at very low injection levels with a spatial resolution limited only by the diffusion length of the charge carriers.
The user manual, the APV and contact information can be found in LabManager:
Lifetime scanner MPDmap info page in LabManager,
Performance information
Range of lifetimes: 20 ns to several ms
The resistivity range for lifetime measurements 0.2 to 100 Ohm.cm, p/n
Material: Silicon, epitaxial layers, partially or fully processed wafers, compound semiconductors and beyond.
Measureable properties: Carrier lifetime (steady state or non equilibrium (µ -PCD) selectable), photoconductivity (steady state) microwave Photoconductance Decay (µ-PCD)
Equipment | Lifetime scanner MDPmap | |
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Instrument specifics | Detector |
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Laser |
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Substrates | Size |
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