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'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/A3_Phosphor_Drive-in_furnace click here]'''
'''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/A3_Phosphor_Drive-in_furnace click here]'''
 
''This page is written by DTU Nanolab  internal''


[[Category: Equipment |Thermal A3]]
[[Category: Equipment |Thermal A3]]
[[Category: Thermal process|Furnace]]
[[Category: Thermal process|Furnace]]
[[Category: Furnaces|A3]]
[[Category: Furnaces|A3]]


==Phosphorus Drive-in furnace (A3)==
==Phosphorus Drive-in furnace (A3)==
[[Image:A3helstak.jpg|thumb|400x400px|Phosphorus Drive-in furnace (A3). Positioned in cleanroom B-1]]
[[Image:A3helstak.jpg|thumb|400x400px|Phosphorus Drive-in furnace (A3). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]


The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for thermal oxidation of silicon wafers. Furthermore, the furnace is used for phosphorus drive-in afte pre-deposition/doping or after boron ion implantation.
The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for thermal oxidation of silicon wafers. Furthermore, the furnace is used for phosphorus drive-in afte pre-deposition/doping or after boron ion implantation.
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==Process knowledge==
==Process knowledge==
*Phosphorus drive-in: look at the [[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]] page
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
*Phosphorus drive-in: look at the [[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]] page




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*[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=2847&mach=82 The QC procedure for Phosphorus drive-in furnace (A3)]<br>
*[http://labmanager.dtu.dk/d4Show.php?id=2847&mach=82 The QC procedure for Phosphorus drive-in furnace (A3)]<br>
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1988 The newest QC data for wet and dry oxide]<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=82 The newest QC data for wet and dry oxide]<br>


{| {{table}}
{| {{table}}
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! QC Recipe:
! QC Recipe:
! Wet1050
! WET1050
! Dry1050
! DRY1050
|-  
|-  
| H<sub>2</sub> flow
| H<sub>2</sub> flow
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|-  
|-  
|Temperature
|Temperature
|1050 C
|1050 <sup>o</sup>C
|1050 C
|1050 <sup>o</sup>C
|-
|-
|Oxidation time
|Oxidation time
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and over the boat)
and over the boat)
|-
|-
!Dry1050
!DRY1050
|110-116 nm
|110-116 nm
|3 %
|3 %
|-
|-
!Wet1050
!WET1050
|305-321 nm
|305-321 nm
|5 %
|5 %
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|}
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Numbers from March 2020
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==Overview of the performance of the phosphorus drive-in furnace and some process related parameters==
==Overview of the performance of the phosphorus drive-in furnace and some process related parameters==
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!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
*Drive-in of phosphorous
*Thermal oxidation of Si wafers
*Oxidation of silicon
*Driving-in pre-deposited or ion-implanted phosphorus
*Oxidation of phosphorous phase layers
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|Oxidation:
Thermal oxidation:
*Dry
*Dry oxidation using O<sub>2</sub>
*Wet: with torch (H<sub>2</sub>+O<sub>2</sub>)
*Wet oxidation using H<sub>2</sub>O vapour
Driving-in pre-deposited or ion-implanted phosphorus
*Dry or wet oxidation recipes are normally used for this purpose
|-
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!style="background:silver; color:black" align="center"|Performance
!style="background:silver; color:black" align="center"|Performance
|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness and quality
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Dry SiO<sub>2</sub>: 50 Å  to ~2000 Å (it takes too long to grow a thicker oxide layer)
*Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide)
*Wet SiO<sub>2</sub>: 50 Å to ~3 µm (it takes too long to grow a thicker oxide layer)
*Wet oxide: ~ 0 nm - 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers)  
* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/A3 furnace break-down voltage measurement results|Break-down voltage measurement results]]
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*800-1150 <sup>o</sup>C
*800 <sup>o</sup>C - 1150 <sup>o</sup>C
|-
|-
|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 atm
*1 atm (no vacuum)
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|style="background:LightGrey; color:black"|Gasses on the system
|style="background:LightGrey; color:black"|Gasses on the system
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*O<sub>2</sub>, N<sub>2</sub> and H<sub>2</sub>
*N<sub>2</sub>
*O<sub>2</sub>
*H<sub>2</sub> (in a torch, H<sub>2</sub> and O<sub>2</sub> burns into H<sub>2</sub>O for wet oxidation)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
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|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon wafers (RCA cleaned)
*Silicon wafers (RCA cleaned)
*Wafers from the the Phosphorus Pre-dep furnace can go directly into the furnace
*Wafers coming from the Phosphorus Pre-dep furnace that have been BHF etched in the dedicated bath in the RCA bench can go directly into the furnace
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