Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum: Difference between revisions
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== Molybdenum deposition == | == Molybdenum deposition == | ||
Molybdenum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment. | Molybdenum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment. | ||
==Sputtering of Molybdenum== | |||
Molybdenum may be sputter deposited in either the single-chamber sputter-system ("Sputter System Lesker") or the cluster-based sputter system ("[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-System Metal-Oxide(PC1)]]" and "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-System Metal-Nitride(PC3)]]"). See more in link here and the chart below. | |||
*[[Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum/Mo Sputtering in Cluster Lesker PC1|Mo Sputtering in Sputter-System Metal-Oxide(PC1)]] | |||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
| Line 11: | Line 19: | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
| Line 16: | Line 25: | ||
| E-beam deposition of Mo | | E-beam deposition of Mo | ||
(line-of-sight deposition) | (line-of-sight deposition) | ||
| Sputter deposition of Mo | |||
(not line-of-sight) | |||
| Sputter deposition of Mo | | Sputter deposition of Mo | ||
(not line-of-sight) | (not line-of-sight) | ||
| Line 22: | Line 33: | ||
! Pre-clean | ! Pre-clean | ||
|Ar ion source | |Ar ion source | ||
| | |||
|RF Ar clean | |RF Ar clean | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10Å to | |10Å to 600 nm * | ||
|10Å to 500 Å | |10Å to 500 Å | ||
|10Å to at least 100 nm (discuss with staff) | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Deposition rate | ! Deposition rate | ||
|1Å/s to 10Å/s | | 1Å/s to 10Å/s | ||
| Depends on process parameters, roughly about 1 Å/s | | Depends on process parameters, roughly about 1 Å/s | ||
| At least up to 4 Å/s. See process log. | |||
|- | |- | ||
|- | |- | ||
| Line 45: | Line 59: | ||
* 1x4" wafer or | * 1x4" wafer or | ||
* 1x6" wafer | * 1x6" wafer | ||
| | |||
*Up to 10x4" or 6" wafers | |||
*Many smaller pieces | |||
|- | |- | ||
| Line 68: | Line 85: | ||
* Mylar | * Mylar | ||
* SU-8 | * SU-8 | ||
| | |||
Almost any as long as it does not outgas. | |||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Comment | ! Comment | ||
| | | | ||
| Sputter target size 2". | |||
| Sputter target size 3-4" (usually 3"). So far (June 2025) Mo has been deposited in PC1. See process log for details. | |||
|- | |- | ||
| Line 78: | Line 98: | ||
'''*''' '' | '''*''' ''Please send a request to us if you wish to deposit more than 600 nm (write to metal@nanolab.dtu.dk)'' | ||
Latest revision as of 22:51, 16 July 2025
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
Molybdenum deposition
Molybdenum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.
Sputtering of Molybdenum
Molybdenum may be sputter deposited in either the single-chamber sputter-system ("Sputter System Lesker") or the cluster-based sputter system ("Sputter-System Metal-Oxide(PC1)" and "Sputter-System Metal-Nitride(PC3)"). See more in link here and the chart below.
| E-beam evaporation (Temescal) | Sputter deposition (Lesker) | Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
|---|---|---|---|
| General description | E-beam deposition of Mo
(line-of-sight deposition) |
Sputter deposition of Mo
(not line-of-sight) |
Sputter deposition of Mo
(not line-of-sight) |
| Pre-clean | Ar ion source | RF Ar clean | |
| Layer thickness | 10Å to 600 nm * | 10Å to 500 Å | 10Å to at least 100 nm (discuss with staff) |
| Deposition rate | 1Å/s to 10Å/s | Depends on process parameters, roughly about 1 Å/s | At least up to 4 Å/s. See process log. |
| Batch size |
|
|
|
| Allowed materials |
|
|
Almost any as long as it does not outgas. |
| Comment | Sputter target size 2". | Sputter target size 3-4" (usually 3"). So far (June 2025) Mo has been deposited in PC1. See process log for details. |
* Please send a request to us if you wish to deposit more than 600 nm (write to metal@nanolab.dtu.dk)