LabAdviser/Technology Research/Quantitative electron microscopy of 2D materials: Difference between revisions
Created page with "='' Quantitative electron microscopy of 2D materials ''= *'''Project type:''' Ph.D project *'''Project responsible:''' Anton Bay Andersen *'''Supervisors:''' Thomas Willum Han..." |
|||
| (3 intermediate revisions by 2 users not shown) | |||
| Line 4: | Line 4: | ||
*'''Supervisors:''' Thomas Willum Hansen, Tim Booth, Shima Kadkhodazadeh | *'''Supervisors:''' Thomas Willum Hansen, Tim Booth, Shima Kadkhodazadeh | ||
*'''Partners involved:''' DTU Physics | *'''Partners involved:''' DTU Physics | ||
*'''Project start''':yyyy-mm-dd | |||
*Link to final thesis: | |||
=Project description= | |||
In this project 2D semiconductors, transition metal dichalcogenides, will be characterized both spatially and spectrally using state‐of‐the‐art scanning electron microscopy and aberration corrected transmission electron microscopy. The research is focused on quantitative electron microscopy with atomic accuracy to examine both the atomic structure of the 2D materials, devices made of stacks of these materials and spectral properties of these structures (electronic structure excitations). These results will come from STEM/STEM‐EELS and TEM experiments designed and performed often prepared with the in‐situ lift-out method. The expected outcomes of the experiments are information of the atomic structure of the 2D materials and the effect of how stacking and patterning affect the structure along with the electronic structure. | In this project 2D semiconductors, transition metal dichalcogenides, will be characterized both spatially and spectrally using state‐of‐the‐art scanning electron microscopy and aberration corrected transmission electron microscopy. The research is focused on quantitative electron microscopy with atomic accuracy to examine both the atomic structure of the 2D materials, devices made of stacks of these materials and spectral properties of these structures (electronic structure excitations). These results will come from STEM/STEM‐EELS and TEM experiments designed and performed often prepared with the in‐situ lift-out method. The expected outcomes of the experiments are information of the atomic structure of the 2D materials and the effect of how stacking and patterning affect the structure along with the electronic structure. | ||
= Publications = | |||
== First author == | |||
== Co-author == | |||
= Conference contributions = | |||
== Presentation == | |||
== Poster == | |||
= Further information = | |||
* Description how to prepare a FIB lamella in the FEI Helios Dualbeam: [[LabAdviser/314/Preparation 314-307/Solid-matter/FIB-lamella|[CLICK]]] | |||
Latest revision as of 13:15, 25 November 2020
Quantitative electron microscopy of 2D materials
- Project type: Ph.D project
- Project responsible: Anton Bay Andersen
- Supervisors: Thomas Willum Hansen, Tim Booth, Shima Kadkhodazadeh
- Partners involved: DTU Physics
- Project start:yyyy-mm-dd
- Link to final thesis:
Project description
In this project 2D semiconductors, transition metal dichalcogenides, will be characterized both spatially and spectrally using state‐of‐the‐art scanning electron microscopy and aberration corrected transmission electron microscopy. The research is focused on quantitative electron microscopy with atomic accuracy to examine both the atomic structure of the 2D materials, devices made of stacks of these materials and spectral properties of these structures (electronic structure excitations). These results will come from STEM/STEM‐EELS and TEM experiments designed and performed often prepared with the in‐situ lift-out method. The expected outcomes of the experiments are information of the atomic structure of the 2D materials and the effect of how stacking and patterning affect the structure along with the electronic structure.
Publications
First author
Co-author
Conference contributions
Presentation
Poster
Further information
- Description how to prepare a FIB lamella in the FEI Helios Dualbeam: [CLICK]