Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride: Difference between revisions

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== Deposition of Titanium nitride ==
== Deposition of Titanium Nitride ==
Thin films of titanium nitride can only be deposited in the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]] at the moment. More information about the process can be found [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiN deposition using ALD2|here]].


==Only method at the moment for the deposition of titanium nitride.==
Thin films of Titanium Nitride (TiN) can be deposited by either [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD]] or reactive sputtering. If sputtering is used, the target is Ti and nitrogen (N<sub>2</sub>) is added as reactive gas to the chamber resulting the formation of Titanium Nitride on the sample. The process information is available below:
 
*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiN deposition using ALD2|TiN deposition using ALD]].
 
*[[Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride/Deposition of Titanium Nitride using Lesker sputter tool|TiN deposition with reactive sputtering using Lesker sputter tool]].
 
*[[Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride/Deposition of Titanium Nitride using Sputter-System Metal-Oxide (PC1)|TiN deposition with reactive sputtering using Sputter-System Metal-Oxide (PC1)]].
 
==Comparison between sputtering and ALD methods for deposition of Titanium Nitride.==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]
![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]
![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Oxide (PC1)/Sputter-System Metal-Nitride (PC3)]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]]
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|
|
*Atomic Layer Deposition
*Atomic Layer Deposition
|
*Reactive sputtering
*Pulsed DC reactive sputtering
*Reactive HIPIMS (high-power impulse magnetron sputtering)
|
*Reactive sputtering
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Stoichiometry
!Stoichiometry
|
|
*TiN
*TiN
|
*TiN (can be tuned)
|
*TiN (can be tuned)
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Film Thickness
!Film Thickness
|
|
* 0nm - 50nm
* 0 nm - 50 nm
|
* few nm - ? (hundreds of nm)
|
* few nm - 200 nm
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Deposition rate
!Deposition rate
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* 0.0173 nm/cycle on a flat sample
* 0.0173 nm/cycle on a flat sample
* 0.0232 nm/cycle on a high aspect ratio structures
* 0.0232 nm/cycle on a high aspect ratio structures
|
* about 0.12 nm/s, depends on sputtering parameters, check processlog in LabManager
|
* up to 0.0625 nm/s on a flat sample
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Step coverage
!Step coverage
|
|
*Very good
*Very good
|
*not known yet
|
*Not investigated
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Process Temperature
!Process Temperature
|
|
* 450<sup>o</sup>C
* 450 °C
|
* Up to 600 °C
|
* Up to 400 °C
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Substrate size
!Substrate size
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*1-5 100 mm wafers
*1-5 100 mm wafers
*1-5 150 mm wafer
*1-5 150 mm wafer
|
*Many small samples
*Up to 10x100 mm or 150 mm wafers
|
*Several small samples
*100 mm wafer
*150 mm wafer
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!Allowed materials
|
|
*Silicon  
*Silicon  
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*III-V materials (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
|
*Silicon
*Silicon oxide, silicon nitride
*Quartz/fused silica
*Metals
*III-V materials (use dedicated carrier wafer)
*Almost anything that is not toxic and does not outgas
|
*Silicon
*Silicon oxide, silicon nitride
*Quartz/fused silica
*Metals
*III-V materials (use dedicated carrier wafer)
*Almost anything that is not toxic
|-
|-
|}
|}

Latest revision as of 13:39, 2 June 2023

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All text by Nanolab staff

Deposition of Titanium Nitride

Thin films of Titanium Nitride (TiN) can be deposited by either ALD or reactive sputtering. If sputtering is used, the target is Ti and nitrogen (N2) is added as reactive gas to the chamber resulting the formation of Titanium Nitride on the sample. The process information is available below:

Comparison between sputtering and ALD methods for deposition of Titanium Nitride.

ALD2 Sputter-System Metal-Oxide (PC1)/Sputter-System Metal-Nitride (PC3) Sputter-System(Lesker)
Generel description
  • Atomic Layer Deposition
  • Reactive sputtering
  • Pulsed DC reactive sputtering
  • Reactive HIPIMS (high-power impulse magnetron sputtering)
  • Reactive sputtering
Stoichiometry
  • TiN
  • TiN (can be tuned)
  • TiN (can be tuned)
Film Thickness
  • 0 nm - 50 nm
  • few nm - ? (hundreds of nm)
  • few nm - 200 nm
Deposition rate
  • 0.0173 nm/cycle on a flat sample
  • 0.0232 nm/cycle on a high aspect ratio structures
  • about 0.12 nm/s, depends on sputtering parameters, check processlog in LabManager
  • up to 0.0625 nm/s on a flat sample
Step coverage
  • Very good
  • not known yet
  • Not investigated
Process Temperature
  • 450 °C
  • Up to 600 °C
  • Up to 400 °C
Substrate size
  • Several small samples
  • 1-5 50 mm wafers
  • 1-5 100 mm wafers
  • 1-5 150 mm wafer
  • Many small samples
  • Up to 10x100 mm or 150 mm wafers
  • Several small samples
  • 100 mm wafer
  • 150 mm wafer
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Metals
  • III-V materials (use dedicated carrier wafer)
  • Almost anything that is not toxic and does not outgas
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Metals
  • III-V materials (use dedicated carrier wafer)
  • Almost anything that is not toxic
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