Specific Process Knowledge/Etch/III-V RIE/III V RIE ETCHES: Difference between revisions
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==CHF3/O2 etch== | ==CHF3/O2 etch== | ||
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A plasma with a gas mixture of CHF<sub>3</sub> and O<sub>2</sub> is used to etch SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> dielectricas; flour radicals are responsible for etching the dielectrica while oxygen removes the polymer that is formed during the etch. The polymer deposition rate and SiO<sub>2</sub> etch rate are very sensitive to the flow ratio of CHF<sub>3</sub> and O<sub>2</sub> . The current processes have been optimized from this point of view. | A plasma with a gas mixture of CHF<sub>3</sub> and O<sub>2</sub> is used to etch SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> dielectricas; flour radicals are responsible for etching the dielectrica while oxygen removes the polymer that is formed during the etch. The polymer deposition rate and SiO<sub>2</sub> etch rate are very sensitive to the flow ratio of CHF<sub>3</sub> and O<sub>2</sub> . The current processes have been optimized from this point of view. | ||
There are | There are 4 standard programs: | ||
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|10.6 | |10.6 | ||
|''dec2019/jan2020 by Qugig and bghe @nanolab'' | |[[/SiO2 DOE|Process Development]] ''dec2019/jan2020 by Qugig and bghe @nanolab'' | ||
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!Lower etch rate, medium selectivity to resist | !Lower etch rate, medium selectivity to resist | ||