Specific Process Knowledge/Etch/III-V RIE/III V RIE ETCHES: Difference between revisions
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==CHF3/O2 etch== | ==CHF3/O2 etch== | ||
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A plasma with a gas mixture of CHF<sub>3</sub> and O<sub>2</sub> is used to etch SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> dielectricas; flour radicals are responsible for etching the dielectrica while oxygen removes the polymer that is formed during the etch. The polymer deposition rate and SiO<sub>2</sub> etch rate are very sensitive to the flow ratio of CHF<sub>3</sub> and O<sub>2</sub> . The current processes have been optimized from this point of view. | A plasma with a gas mixture of CHF<sub>3</sub> and O<sub>2</sub> is used to etch SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> dielectricas; flour radicals are responsible for etching the dielectrica while oxygen removes the polymer that is formed during the etch. The polymer deposition rate and SiO<sub>2</sub> etch rate are very sensitive to the flow ratio of CHF<sub>3</sub> and O<sub>2</sub> . The current processes have been optimized from this point of view. | ||
There are | There are 4 standard programs: | ||
{| border="1" style="text-align: center; width: | {| border="1" style="text-align: center; width: 1000px; height: 350px;" | ||
! colspan="8" style="text-align: center;" style="background: #efefef;" | CHF<sub>3</sub>/O<sub>2</sub> etch rates, nm/min | ! colspan="8" style="text-align: center;" style="background: #efefef;" | CHF<sub>3</sub>/O<sub>2</sub> etch rates, nm/min | ||
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! width="10%" |ZEP520A | ! width="10%" |ZEP520A | ||
! width="10%" |Negative DUV: UVN 2030-0.5 | ! width="10%" |Negative DUV: UVN 2030-0.5 | ||
! width=" | ! width="60%" |Comments/links | ||
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!SiO2_602 | !SiO2_602 | ||
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|10.6 | |10.6 | ||
| | |[[/SiO2 DOE|Process Development]] ''dec2019/jan2020 by Qugig and bghe @nanolab'' | ||
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!Lower etch rate, medium selectivity to resist | !Lower etch rate, medium selectivity to resist | ||
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|~12 | |~12 | ||
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|[[/Details SiO2_100|Images and reproducibility]] | | [[/Details SiO2_100|Images and reproducibility]] ''dec2019/jan2020 by Qugig and bghe @nanolab'' | ||
|- | |- | ||
!Si3N4Ti | !Si3N4Ti |
Latest revision as of 10:21, 24 March 2023
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CHF3/O2 etch
A plasma with a gas mixture of CHF3 and O2 is used to etch SiO2 and Si3N4 dielectricas; flour radicals are responsible for etching the dielectrica while oxygen removes the polymer that is formed during the etch. The polymer deposition rate and SiO2 etch rate are very sensitive to the flow ratio of CHF3 and O2 . The current processes have been optimized from this point of view.
There are 4 standard programs:
CHF3/O2 etch rates, nm/min | |||||||
---|---|---|---|---|---|---|---|
Process Name | Process parameters | SiO2 | Si3N4 | AZ5206 | ZEP520A | Negative DUV: UVN 2030-0.5 | Comments/links |
SiO2_602 |
|
30{(1)} | 29{(2)} | 36{(3)} | |||
High selectivity to resist |
|
85 | 10.6 | Process Development dec2019/jan2020 by Qugig and bghe @nanolab | |||
Lower etch rate, medium selectivity to resist |
|
49-62 (depending on conditioning) | ~12 | Images and reproducibility dec2019/jan2020 by Qugig and bghe @nanolab | |||
Si3N4Ti |
|
38 |
(1) Measured with laser reflectometry 106 (?) nm on G360 fully etched after 3:30: 05-10-11 (2) From Dektak measurement on G360 2005-10-11 (3) From Dektak measurement on D002 (I & II) 2005-10-12. D002 is a pure InP-wafer. (4) Etch rate measured on 140nm wide holes
CH4/H2 etch
This plasma etch is used for etch of InP and InGaAs(P).
In order to ensure unchanged etching conditions during etch, the chamber needs to be primed before using this etch. There are 2 priming programs, clecond and precond. Clecond also cleans the chamber with Oxygen before priming it.
There are 2 standard etch programs for etching InP, InGaAs and InGaAsP: InPstd is for InP-etch while InGaAs1 is for InGaAs- and InGaAsP-etch.
The etch-rates for the CH4 / H2 etch depends highly on the total etching area and on the size of the structrures that are etched, eg ridges or small holes. All rates are given for a total etch area of 2 inches and for etching of ridges, if not otherwise commented. Dektak has been used for the measurement if nothing else is mentioned.
CH4/H2 etch rates, nm/min | ||||||
---|---|---|---|---|---|---|
Process Name | Process parameters | InP | InGaAs | GaAs | AlAs | SiO2 |
InPstd |
|
29 | 9 | 1 | ||
InGaAs1 |
|
29 | 9 |
BCB polymer and Resist etch
The BCB-etch is mainly a O2 etch but a small amount of CHF3 is added to remove Si. There are 3 standard processes: BCB_LP and BCB30LP are low pressure (anisotropic) medium power etches for planarization of BCB, while BCB100W is a high power etch to totally remove thick layers of BCB.
Other resists (ZEP520A, AZ-resists) can be etched by a O2 etch. The standard program is called ASH?m, where the process time is optional.
O2/CHF3 etch rates, nm/min | ||||
---|---|---|---|---|
Process Name | Process parameters | BCB | SiO2 | AZ5214 |
BCB_LP |
|
70 +/- ? | 6 +/- ? | |
BCB30LP |
|
127 | ||
BCB100W |
|
880 | 815 |
O2/ etch rates, nm/min | |||||
---|---|---|---|---|---|
Process Name | Process parameters | BCB | ZEP520A | AZ5214 | SiO2 |
ASH?m |
|
? | 98 | 70 | 6 +/- ? |
Chamber Cleaning
Cleaning of the chamber is very important to achieve reproducible etch results. After every etch the chamber should be cleaned. For most CHF3/O2 etch programs a simple clean procedure is sufficient. When BCB has been etched one must use cleanbcb, where CHF3 is added. If CH4 is used in the process (all programs etching III-V compounds) a vlclean procedure is necessary.
Cleaning programs | |||||
---|---|---|---|---|---|
Process Name | O2-flow (sccm) | Pressure (mTorr) | Power (W) | Vbias (V) | Time (min) |
clean | 50 | 10 | |||
Lclean | 50 | 20 | |||
vlclean | 50 | 30 | |||
cleanbcb | 50 | 100 | 100 | 10 |