Specific Process Knowledge/Etch/III-V RIE/III V RIE ETCHES: Difference between revisions
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==CHF3/O2 etch== | ==CHF3/O2 etch== | ||
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A plasma with a gas mixture of CHF<sub>3</sub> and O<sub>2</sub> is used to etch SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> dielectricas; flour radicals are responsible for etching the dielectrica while oxygen removes the polymer that is formed during the etch. The polymer deposition rate and SiO<sub>2</sub> etch rate are very sensitive to the flow ratio of CHF<sub>3</sub> and O<sub>2</sub> . The current processes have been optimized from this point of view. | A plasma with a gas mixture of CHF<sub>3</sub> and O<sub>2</sub> is used to etch SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> dielectricas; flour radicals are responsible for etching the dielectrica while oxygen removes the polymer that is formed during the etch. The polymer deposition rate and SiO<sub>2</sub> etch rate are very sensitive to the flow ratio of CHF<sub>3</sub> and O<sub>2</sub> . The current processes have been optimized from this point of view. | ||
There are | There are 4 standard programs: | ||
{| border="1" style="text-align: center; width: | {| border="1" style="text-align: center; width: 1000px; height: 350px;" | ||
! colspan=" | ! colspan="8" style="text-align: center;" style="background: #efefef;" | CHF<sub>3</sub>/O<sub>2</sub> etch rates, nm/min | ||
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! scope="row" width="15%" |Process Name | ! scope="row" width="15%" |Process Name | ||
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! width="10%" |ZEP520A | ! width="10%" |ZEP520A | ||
! width="10%" |Negative DUV: UVN 2030-0.5 | ! width="10%" |Negative DUV: UVN 2030-0.5 | ||
! width="60%" |Comments/links | |||
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!SiO2_602 | !SiO2_602 | ||
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|29'''<sup>{(2)}</sup>''' | |29'''<sup>{(2)}</sup>''' | ||
|36'''<sup>{(3)}</sup>''' | |36'''<sup>{(3)}</sup>''' | ||
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|10.6 | |10.6 | ||
|[[/SiO2 DOE|Process Development]] ''dec2019/jan2020 by Qugig and bghe @nanolab'' | |||
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!Lower etch rate, medium selectivity to resist | !Lower etch rate, medium selectivity to resist | ||
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|~12 | |~12 | ||
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| [[/Details SiO2_100|Images and reproducibility]] ''dec2019/jan2020 by Qugig and bghe @nanolab'' | |||
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!Si3N4Ti | !Si3N4Ti | ||
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|38 | |38 | ||
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