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Specific Process Knowledge/Etch/III-V RIE/III V RIE ETCHES: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labnanolab.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_RIE/III_V_RIE_ETCHES  click here]'''<br>


==CHF3/O2 etch==
==CHF3/O2 etch==
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A plasma with a gas mixture of CHF<sub>3</sub> and O<sub>2</sub> is used to etch SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> dielectricas; flour radicals are responsible for etching the dielectrica while oxygen removes the polymer that is formed during the etch. The polymer deposition rate and SiO<sub>2</sub>  etch rate are very sensitive to the flow ratio of CHF<sub>3</sub>  and O<sub>2</sub> . The current processes have been optimized from this point of view.
A plasma with a gas mixture of CHF<sub>3</sub> and O<sub>2</sub> is used to etch SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> dielectricas; flour radicals are responsible for etching the dielectrica while oxygen removes the polymer that is formed during the etch. The polymer deposition rate and SiO<sub>2</sub>  etch rate are very sensitive to the flow ratio of CHF<sub>3</sub>  and O<sub>2</sub> . The current processes have been optimized from this point of view.


There are 3 standard programs:
There are 4 standard programs:




{| border="1" style="text-align: center; width: 600px; height: 350px;"
{| border="1" style="text-align: center; width: 1000px; height: 350px;"
! colspan="6" style="text-align: center;" style="background: #efefef;" | CHF<sub>3</sub>/O<sub>2</sub> etch rates, nm/min
! colspan="8" style="text-align: center;" style="background: #efefef;" | CHF<sub>3</sub>/O<sub>2</sub> etch rates, nm/min
|-
|-
! scope="row" width="15%" |Process Name
! scope="row" width="15%" |Process Name
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! width="10%" |AZ5206
! width="10%" |AZ5206
! width="10%" |ZEP520A
! width="10%" |ZEP520A
! width="10%" |Negative DUV: UVN 2030-0.5
! width="60%" |Comments/links
|-
|-
!SiO2_602  
!SiO2_602  
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|29'''<sup>{(2)}</sup>'''
|29'''<sup>{(2)}</sup>'''
|36'''<sup>{(3)}</sup>'''
|36'''<sup>{(3)}</sup>'''
|&nbsp;
|&nbsp;
|-
|-
!?1
!High selectivity to resist
!
!
*CHF<sub>3</sub>-flow: 16 sccm,  
*CHF<sub>3</sub>-flow: 17 sccm,  
*O<sub>2</sub>-flow: 2 sccm,
*O<sub>2</sub>-flow: 0 sccm,
*Power = 60 W,
*Power = 150 W,
*Vbias = 325 V,
*Vbias = ? V,
*Process pressure = 100 mTorr
*Process pressure = 150 mTorr
|30'''<sup>{(1)}</sup>'''
|85
|&nbsp;
|&nbsp;
|&nbsp;
|&nbsp;
|29'''<sup>{(2)}</sup>'''
|10.6
|36'''<sup>{(3)}</sup>'''
|[[/SiO2 DOE|Process Development]] ''dec2019/jan2020 by Qugig and bghe @nanolab''
|-
|-
!?2
!Lower etch rate, medium selectivity to resist
!
!
*CHF<sub>3</sub>-flow: 16 sccm,  
*CHF<sub>3</sub>-flow: 17 sccm,  
*O<sub>2</sub>-flow: 2 sccm,
*O<sub>2</sub>-flow: 0 sccm,
*Power = 60 W,
*Power = 100 W,
*Vbias = 325 V,
*Vbias = ? V,
*Process pressure = 100 mTorr
*Process pressure = 20 mTorr
|30'''<sup>{(1)}</sup>'''
|49-62 (depending on conditioning)
|&nbsp;
|&nbsp;
|~12
|&nbsp;
|&nbsp;
|29'''<sup>{(2)}</sup>'''
| [[/Details SiO2_100|Images and reproducibility]] ''dec2019/jan2020 by Qugig and bghe @nanolab''
|36'''<sup>{(3)}</sup>'''
|-
|-
!Si3N4Ti
!Si3N4Ti
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|&nbsp;
|&nbsp;
|38
|38
|&nbsp;
|&nbsp;
|&nbsp;
|&nbsp;
|&nbsp;
|&nbsp;
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