Specific Process Knowledge/Etch/DRIE-Pegasus/processC: Difference between revisions

Latest revision as of 12:02, 28 June 2023

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Process C

Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab

Process C is intended to be used on features in the sub 2-3 µm range. The recipe was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.

The 100 mm wafers had an Al mask made by lift-off:

80 nm of spin coated ZEP520A E-beam resist
Patterned by E-beam lithography
20 nm Al deposited and patterned by lift-off
~ 99 % etch load

**Process C specifications**
Parameter	Specification	Average result
Etch rate (nm/min)	Not specified
Etched depth (nm)	300
Scallop size (nm)	< 30
Profile (degs)	85 +/- 5
Selectivity to resist	Not specified
Undercut (nm)	< 30
Uniformity (%)	< 3.5
Repeatability (%)	<4

**Process C recipe**
Parameter	Etch
Gas flow (sccm)	SF₆ 38 C₄F₈ 70
Process time (mm:ss)	01:30
Pressure (mtorr)	4
Coil power (W)	450
Platen power (W)	100
Common	Temperature 10 degsree, HBC 10 torr, long funnel, with baffle & 100 mm spacers

@@ Line 2: / Line 2: @@
 <!--Checked for updates on 14/5-2018 - ok/jmli -->
 == Process C ==
+{{contentbydryetch}}
+<!--Checked for updates on 2/02-2023 - ok/jmli -->
-Process C is labelled Nano silicon etch. In the acceptance test the process was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.
+Process C is intended to be used on features in the sub 2-3 µm range. The recipe was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.
 The 100 mm wafers had an Al mask made by lift-off:
@@ Line 20: / Line 22: @@
 ! Average result
 |-
-! Etch rate (µm/min)
+! Etch rate (nm/min)
 | Not specified
 |
 |-
-! Etched depth (µm)
+! Etched depth (nm)
 | 300
 |