Specific Process Knowledge/Etch/DryEtchProcessing/Bonding: Difference between revisions
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== Carriers for dry etching: Temporary bonding of samples or carriers for none bonded samples == | == Carriers for dry etching: Temporary bonding of samples or carriers for none bonded samples == | ||
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=== Purpose === | === Purpose === | ||
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<ol> | <ol> | ||
<li>Find a carrier wafer that has the right size. Keep in mind that it matters a great deal if the surface will be etched or not, i.e. if it has oxide or not. </li> | <li>Find a carrier wafer that has the right size. Keep in mind that it matters a great deal if the surface will be etched or not, i.e. if it has oxide or not. </li> | ||
<li>Take a piece of crystalbond from the shelf in cleanroom 1. </li> | <li>Take a piece of crystalbond from the shelf in cleanroom A-1. </li> | ||
<li>Take your items (substrate, carrier wafer, crystalbond and tweezers) to the hotplate in cleanroom 1. </li> | <li>Take your items (substrate, carrier wafer, crystalbond and tweezers) to the hotplate in cleanroom C-1. </li> | ||
[[image:bonding-n01x.jpg]] | [[image:bonding-n01x.jpg]] | ||
<li>Put the carrier wafer on the hotplate. A 6" wafer will fit not in the recess but it will get sufficiently hot if you leave it there for some seconds longer. </li> | <li>Put the carrier wafer on the hotplate. <!-- A 6" wafer will fit not in the recess but it will get sufficiently hot if you leave it there for some seconds longer. --> </li> | ||
<li>Apply a very thin layer of crystalbond in a circular motion so that it covers some 70 % of the area to be covered by your substrate. Do not apply too much! Little does it.. </li> | <li>Apply a very thin layer of crystalbond in a circular motion so that it covers some 70 % of the area to be covered by your substrate. Do not apply too much! Little does it.. </li> | ||
<li>Gently put your wafer on the crystalbond. </li> | <li>Gently put your wafer on the crystalbond. </li> | ||