Jump to content

Specific Process Knowledge/Etch/DryEtchProcessing/Comparison: Difference between revisions

← Older edit
VisualWikitext
Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,565 edits
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,301 edits
No edit summary
 
(28 intermediate revisions by 2 users not shown)
Line 3: Line 3:


== Hardware and option comparison of the dry etchers ==
== Hardware and option comparison of the dry etchers ==
{{Template:Contentbydryetch}}
<!--Checked for updates on 3/2-2023 - ok/jmli -->


The table below compares the hardware and the options.
The table below compares the hardware and the options.


{| border="2" cellspacing="0" cellpadding="0" align="left"  
{| border="2" cellspacing="0" cellpadding="0" align="left"  
! colspan="2" style="background:silver; color:black" rowspan="2" |
! colspan="2" style="background:silver; color:black" rowspan="2" |
! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)| ASE]]
! style="background:silver; color:black" rowspan="2" align="center" | [[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)| ASE]]
! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/AOE_(Advanced_Oxide_Etch)| AOE]]
! style="background:silver; color:black" rowspan="2"  align="center"| [[Specific Process Knowledge/Etch/AOE_(Advanced_Oxide_Etch)| AOE]]
! style="background:silver; color:black" colspan="2" | [[Specific Process Knowledge/Etch/DRIE-Pegasus| DRIE-Pegasi]]
! style="background:silver; color:black" colspan="4" align="center"| [[Specific Process Knowledge/Etch/DRIE-Pegasus| DRIE-Pegasi]]
! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/ICP_Metal_Etcher| ICP Metal etch ]]
! style="background:silver; color:black" rowspan="2"  align="center"| [[Specific Process Knowledge/Etch/ICP_Metal_Etcher| ICP Metal etch ]]
! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/III-V RIE |III-V RIE ]]
! style="background:silver; color:black" rowspan="2"  align="center"| [[Specific Process Knowledge/Etch/III-V RIE |III-V RIE ]]
! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]]
! style="background:silver; color:black" rowspan="2"  align="center"| [[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]]
! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
! style="background:silver; color:black" rowspan="2"  align="center"| [[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
|- valign="top"
|- valign="top"
! style="background:silver; color:black"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-1|Pegasus 1]]   
! style="background:silver; color:black"  align="center"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-1|Pegasus 1]]   
! style="background:silver; color:black"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2|Pegasus 2]]
! style="background:silver; color:black"  align="center"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2|Pegasus 2]]
! style="background:silver; color:black" align="center"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-3|Pegasus 3]] 
! style="background:silver; color:black" align="center"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4|Pegasus 4]]
|- valign="top"
|- valign="top"
! rowspan="2" style="background:silver; color:black" width="120" |Purpose
! rowspan="2" style="background:silver; color:black" |Purpose
! style="background:WhiteSmoke; color:black" | Primary uses
! style="background:WhiteSmoke; color:black" | Primary uses
| style="background:WhiteSmoke; color:black"| Formerly the primary silicon etcher; now polymers, Silicon oxides and nitrides may also be etched. 5% metal on the surface is allowed.
| style="background:WhiteSmoke; color:black"| Formerly the primary silicon etcher; now polymers, Silicon oxides and nitrides may also be etched. 5% metal on the surface is allowed.
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides on 4" wafers
| style="background:WhiteSmoke; color:black" colspan="2" | Silicon etching
| style="background:WhiteSmoke; color:black"| Silicon etching of 4" wafers
| style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo
| style="background:WhiteSmoke; color:black"| Research tool into silicon etching - only a few special recipes!
| style="background:WhiteSmoke; color:black"| Silicon etching of 6" wafers on 6" wafers
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides on 6" wafers
| style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it!
| style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates
| style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates
| style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs
| style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs
| style="background:WhiteSmoke; color:black"| Physical Etching of all materials
| style="background:WhiteSmoke; color:black"| Physical Etching of all materials
|- valign="top"
|- valign="top"
! style="background:lightgrey; color:black" | Alternative/backup uses
! style="background:lightgrey; color:black" | Alternative or backup uses
| style="background:lightgrey; color:black" | Backup silicon etcher
| style="background:lightgrey; color:black" | Backup silicon etcher
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" colspan="2" | Barc etch
| style="background:lightgrey; color:black" | Barc etch
| style="background:lightgrey; color:black" |
| style="background:lightgrey; color:black" colspan="2"|  
| style="background:lightgrey; color:black" | Silicon etcher
| style="background:lightgrey; color:black" | Silicon etcher
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" |  
Line 42: Line 53:
| style="background:WhiteSmoke; color:black" |  Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" |  Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" |  Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" |  Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" colspan="2" | Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator
| style="background:WhiteSmoke; color:black" colspan="4" | Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" | Parallel plate capacitor setup with RF power between the two electrodes
| style="background:WhiteSmoke; color:black" | Parallel plate capacitor setup with RF power between the two electrodes
Line 49: Line 60:


|-valign="top"
|-valign="top"
! style="background:lightgrey; color:black" | Substrate cooling/temperature
! style="background:lightgrey; color:black" | Substrate cooling and temperature
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 20<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 20<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 60<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 60<sup>o</sup>C  
| style="background:lightgrey; color:black" colspan="2" | The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C  
| style="background:lightgrey; color:black" colspan="4" | The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 50<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 50<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled: Fixed at 20<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled: Fixed at 20<sup>o</sup>C
Line 59: Line 70:


|-valign="top"
|-valign="top"
! style="background:WhiteSmoke; color:black" | Clamping/wafer size
! style="background:WhiteSmoke; color:black" | Clamping and wafer size
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (semco electrode)<br> Wafer size 4"
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (semco electrode)<br> Wafer size 4"
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)<br> Wafer size 4"
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)<br> Wafer size 4"
| style="background:WhiteSmoke; color:black" colspan="2" | Electrostatic clamping (TDESC)<br> Wafer size 4"
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)<br> Wafer size 4"
| style="background:WhiteSmoke; color:black" colspan="3" | Electrostatic clamping (TDESC)<br> Wafer size 6"
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)<br> Wafer size 6"
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)<br> Wafer size 6"
| style="background:WhiteSmoke; color:black" | No clamping<br> Sample size up to 4"
| style="background:WhiteSmoke; color:black" | No clamping<br> Sample size up to 4"
Line 91: Line 103:
| He
| He
|}
|}
|style="background:lightgrey; color:black" colspan="2" |  
|style="background:lightgrey; color:black" |  
{|
{|
| SF<sub>6</sub>
| SF<sub>6</sub>
Line 99: Line 111:
| Ar
| Ar
|}
|}
| style="background:lightgrey; color:black" |  
|style="background:lightgrey; color:black" |  
{|
{|
| SF<sub>6</sub>
| SF<sub>6</sub>
| O<sub>2</sub>
| O<sub>2</sub>
| C<sub>4</sub>F<sub>8</sub>
| N<sub>2</sub>
|-
|-
| Ar
| Ar
| CF<sub>4</sub>
| He
| H<sub>2</sub>
|-
| BCl<sub>3</sub>
| Cl<sub>2</sub>
| HBr
 
|}
|}
| style="background:lightgrey; color:black" |
|style="background:lightgrey; color:black" |  
{|
| O<sub>2</sub>
| CHF<sub>3</sub>
| CH<sub>4</sub>
|-
| Ar
| H<sub>2</sub>
|}
| style="background:lightgrey; color:black" |  
{|
{|
| SF<sub>6</sub>
| SF<sub>6</sub>
| O<sub>2</sub>
| O<sub>2</sub>
| CF<sub>4</sub>
| C<sub>4</sub>F<sub>8</sub>
|-
|-
| Ar
| Ar
| CH<sub>4</sub>
| H<sub>2</sub>
|-
| HBr
| BCl<sub>3</sub>
| Cl<sub>2</sub>
|N<sub>2</sub>
|}
|}
| style="background:lightgrey; color:black" |
{|
| Ar
| O<sub>2</sub>
| CHF<sub>3</sub>
|}
|-valign="top"
!  style="background:WhiteSmoke; color:black" | RF generators
|  style="background:WhiteSmoke; color:black" |
* Coil generator
* Platen generator
|  style="background:WhiteSmoke; color:black" |
* Coil generator
* Platen generator
|  style="background:WhiteSmoke; color:black" colspan="2"|
* Coil generator
* Platen generator
* Low frequency platen generator
|  style="background:WhiteSmoke; color:black" |
* Coil generator
* Platen generator
|  style="background:WhiteSmoke; color:black" |
* RF generator
|  style="background:WhiteSmoke; color:black" |
* Coil generator
* Platen generator
|  style="background:WhiteSmoke; color:black" |
* Coil generator on plama chamber
* 3 accelerator grids between plasma chamber and process chamber
|-valign="top"
! style="background:lightgrey; color:black" | Substrate loading
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock or via atmospheric cassette loader
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Manual loading directly into process chamber
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Automatic loading via load lock
|-valign="top"
!  style="background:WhiteSmoke; color:black" | Options
| style="background:WhiteSmoke; color:black" |
* Bosch multiplexing
* Parameter ramping
|  style="background:WhiteSmoke; color:black" |
|  style="background:WhiteSmoke; color:black" |
* Bosch multiplexing
* Parameter ramping
* SOI option
* Claritas endpoint detection
|  style="background:WhiteSmoke; color:black" |
* Bosch multiplexing
* Parameter ramping
* SOI option
* Optical endpoint detection
|  style="background:WhiteSmoke; color:black" |
* Parameter ramping
* Optical endpoint detection
|  style="background:WhiteSmoke; color:black" |
* Laser endpoint detection
|  style="background:WhiteSmoke; color:black" |
* Parameter ramping
* Bosch multiplexing
* Optical endpoint detection
* Laser endpoint detection
|  style="background:WhiteSmoke; color:black" |
* SIMS endpoint detection
|-valign="top"
! style="background:silver; color:black"| Allowed materials
| style="background:lightgrey; color:black" |
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
* Resists
* Some polymers
*<5% metal on the suface (for 4")
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
* Resists
* Al,(Cr) as masking materials
| style="background:lightgrey; color:black" colspan="2"|
* Silicon
* Fused silica
* Sapphire
* SiC
* Resists
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
* Al, Cr, Ti, W, Mo, Nb
* Resists
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
* GaAs, GaN, InP, with epitaxial layers
* Resists (at low temperature processing)
| style="background:lightgrey; color:black" |
* Silicon
* Aluminium
* Fused silica
* Sapphire
* SiC
* GaAs, GaN, InP, with epitaxial layers
* Resists (at low temperature processing)
|style="background:lightgrey; color:black" |  
|style="background:lightgrey; color:black" |  
* Almost any material, see LabManager
|-
|}
{| border="2" cellspacing="0" cellpadding="0" align="left"
! colspan="2" style="background:silver; color:black" rowspan="2" |
! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)| ASE]]
! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/AOE_(Advanced_Oxide_Etch)| AOE]]
! style="background:silver; color:black" colspan="2" | [[Specific Process Knowledge/Etch/DRIE-Pegasus| DRIE-Pegasi]]
! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/ICP_Metal_Etcher| ICP Metal etch ]]
! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/III-V RIE |III-V RIE ]]
! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]]
! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
|- valign="top"
! style="background:silver; color:black"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-1|Pegasus 1]] 
! style="background:silver; color:black"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2|Pegasus 2]]
|- valign="top"
! rowspan="2" style="background:silver; color:black" width="120" |Purpose
! style="background:WhiteSmoke; color:black" | Primary uses
| style="background:WhiteSmoke; color:black"| Formerly the primary silicon etcher; now polymers, Silicon oxides and nitrides may also be etched. 5% metal on the surface is allowed.
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides
| style="background:WhiteSmoke; color:black" colspan="2" | Silicon etching
| style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo
| style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates
| style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs
| style="background:WhiteSmoke; color:black"| Physical Etching of all materials
|- valign="top"
! style="background:lightgrey; color:black" | Alternative/backup uses
| style="background:lightgrey; color:black" | Backup silicon etcher
| style="background:lightgrey; color:black" |
| style="background:lightgrey; color:black" colspan="2" | Barc etch
| style="background:lightgrey; color:black" | Silicon etcher
| style="background:lightgrey; color:black" |
| style="background:lightgrey; color:black" |
| style="background:lightgrey; color:black" |
|- valign="top"
! rowspan="7" style="background:silver; color:black" | General description
! style="background:WhiteSmoke; color:black" | Plasma source
| style="background:WhiteSmoke; color:black" |  Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" |  Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" colspan="2" | Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" | Parallel plate capacitor setup with RF power between the two electrodes
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" | Ion beam etcher - sputter etches with argon ions
|-valign="top"
! style="background:lightgrey; color:black" | Substrate cooling/temperature
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 20<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 60<sup>o</sup>C
| style="background:lightgrey; color:black" colspan="2" | The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 50<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled: Fixed at 20<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20<sup>o</sup>C to 180<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 5<sup>o</sup>C to 60?<sup>o</sup>C
|-valign="top"
! style="background:WhiteSmoke; color:black" | Clamping/wafer size
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (semco electrode)<br> Wafer size 4"
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)<br> Wafer size 4"
| style="background:WhiteSmoke; color:black" colspan="2" | Electrostatic clamping (TDESC)<br> Wafer size 4"
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)<br> Wafer size 6"
| style="background:WhiteSmoke; color:black" | No clamping<br> Sample size up to 4"
| style="background:WhiteSmoke; color:black" | Mechanical clamping (weighted clamp with ceramic fingers)<br> Wafer size 4"
| style="background:WhiteSmoke; color:black" | Mechanical clamping <br> Wafer sizes 2"/4"/6"/8"
|-valign="top"
! style="background:lightgrey; color:black" | Gasses
| style="background:lightgrey; color:black" |
{|
{|
| SF<sub>6</sub>
| SF<sub>6</sub>
Line 332: Line 135:
|-
|-
| Ar
| Ar
| CF<sub>4</sub>
| CHF<sub>3</sub>
| H<sub>2</sub>
| He
| He
|}
| style="background:lightgrey; color:black" |
{|
| SF<sub>6</sub>
| O<sub>2</sub>
| C<sub>4</sub>F<sub>8</sub>
|-
| H<sub>2</sub>
| CF<sub>4</sub>
| CF<sub>4</sub>
| He
|}
|style="background:lightgrey; color:black" colspan="2" |
{|
| SF<sub>6</sub>
| O<sub>2</sub>
| C<sub>4</sub>F<sub>8</sub>
|-
| Ar
|}
|}
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" |  
{|
{|
Line 409: Line 193:
* Coil generator
* Coil generator
* Platen generator
* Platen generator
|  style="background:WhiteSmoke; color:black"|
* Coil generator
* Platen generator
* Low frequency platen generator
|  style="background:WhiteSmoke; color:black"|
* Platen generator
* Low frequency platen generator
|  style="background:WhiteSmoke; color:black" colspan="2"|  
|  style="background:WhiteSmoke; color:black" colspan="2"|  
* Coil generator
* Coil generator
Line 431: Line 222:
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock or via atmospheric cassette loader
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock or via atmospheric cassette loader
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" colspan="2"| Loading via two cassette loading stations pumped down at vacuum
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Manual loading directly into process chamber
| style="background:lightgrey; color:black" | Manual loading directly into process chamber
Line 446: Line 238:
* SOI option
* SOI option
* Claritas endpoint detection
* Claritas endpoint detection
|  style="background:WhiteSmoke; color:black"|
* Bosch multiplexing
* Parameter ramping
* SOI option
* Optical endpoint detection
|  style="background:WhiteSmoke; color:black" |  
|  style="background:WhiteSmoke; color:black" |  
* Bosch multiplexing
* Bosch multiplexing
Line 451: Line 248:
* SOI option
* SOI option
* Optical endpoint detection
* Optical endpoint detection
|  style="background:WhiteSmoke; color:black" |
* Bosch multiplexing
* Parameter ramping
* SOI option
|  style="background:WhiteSmoke; color:black" |  
|  style="background:WhiteSmoke; color:black" |  
* Parameter ramping
* Parameter ramping
Line 464: Line 265:
* SIMS endpoint detection
* SIMS endpoint detection
|-valign="top"
|-valign="top"
! style="background:silver; color:black"| Allowed materials
 
! style="background:silver; color:black" rowspan="2"| Allowed materials
! style="background:lightgrey; color:black" | Materials
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" |
* Silicon, Silicon oxide, silicon nitride
* Silicon
* Fused silica
* Fused silica
* Sapphire
* Sapphire
Line 475: Line 277:
*<5% metal on the suface (for 4")
*<5% metal on the suface (for 4")
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" |  
* Silicon
* Silicon, Silicon oxide, silicon nitride
* Fused silica
* Fused silica
* Sapphire
* Sapphire
Line 481: Line 283:
* Resists
* Resists
* Al,(Cr) as masking materials
* Al,(Cr) as masking materials
| style="background:lightgrey; color:black" colspan="2"|
| style="background:lightgrey; color:black" colspan="4"|
* Silicon
* Silicon, Silicon oxide, silicon nitride
* Fused silica
* Fused silica
* Sapphire
* Sapphire
Line 488: Line 290:
* Resists
* Resists
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" |  
* Silicon
* Silicon, Silicon oxide, silicon nitride
* Fused silica
* Fused silica
* Sapphire
* Sapphire
Line 495: Line 297:
* Resists
* Resists
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" |  
* Silicon
* Silicon, Silicon oxide, silicon nitride
* Fused silica
* Fused silica
* Sapphire
* Sapphire
Line 502: Line 304:
* Resists (at low temperature processing)
* Resists (at low temperature processing)
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" |  
* Silicon
* Silicon, Silicon oxide, silicon nitride
* Aluminium
* Aluminium
* Fused silica
* Fused silica
Line 510: Line 312:
* Resists (at low temperature processing)
* Resists (at low temperature processing)
|style="background:lightgrey; color:black" |  
|style="background:lightgrey; color:black" |  
* Almost any material, see LabManager
* Almost any material
 
|-
! style="background:WhiteSmoke; color:black" | Cross contamination sheet
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=105 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=115 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=265 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=398 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=455 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=456 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=266 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=155 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=268 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=267 Link]
|-
|-
|}
|}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DryEtchProcessing/Comparison"