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'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Descum click here]'''
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==Descum results==
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Descum click here]'''


===Plasma asher 1 ===
[[Category: Equipment|Lithography descum]]
[[Category: Lithography|Descum]]


[[image:Descum Results aug 2019.png|right|frame| Descum results]]
__TOC__
 
=Plasma Asher 1=
[[File:Descum Results aug 2019.png|640px|thumb|right|Descum results plasma asher 1. September 2019]]
 
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=55 LabManager] - '''requires login'''


Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.


'''Recipe 1:'''<br>
Note: Plasma asher was cold before use
Note: Plasma asher was cold before use
*O2 flow: 70 ml/min
*N2 flow: 70 ml/min
*Power: 150 W
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 5 || 7 || 10 || 10 
|-
|'''Etched Thickness (nm)'''|| 14.2 || 16.3 || 47.6 || 123.2 || 854.3 || 862.1
|-
|}
|}


'''Recipe 2:'''<br>
Note: Plasma asher was cold before use
*O2 flow: 500 ml/min
*N2 flow: 0 ml/min
*Power: 500 W
{| {{table}}
{| {{table}}
| align="center" |  
| align="center" |  
{| border="1" cellspacing="1" cellpadding="2" align="center"
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
! colspan="4" | Settings
|- style="background:LightGrey"
! colspan="6" | Etched Thickness (nm)  
|'''Ashing time (min)'''|| 1|| 2 || 5 || 7 || 10 || 10 
|-
|'''Etched Thickness (nm)'''|| - || 8.1 || 32.9 || 271.1 || 495.6 || 446.2
|-
|-
| colspan="4" |
|}
! colspan="6" | ashing time (min)  
|}
<br clear="all" />
==Descum tests on UV resists==
''Conny Hjort & Jesper Hanberg, September 2021''
[[Image:PA1_descum.jpg|640px|thumb|Descum results plasma asher 1. August 2021]]
 
Descum of different resists, AZ5214E, AZ701 MiR and AZ2020 nLOF, on a single 100mm wafer was tested. Wafer was placed vertically in the middle of glass carrier.
 
'''Recipe settings:'''<br>
Note: plasma Asher was cold before use.
*O2 flow: 70 ml/min
*N2 flow: 70 ml/min
Power: 150 W
 
Minor temperature rise during processing was observed, but not more than 5 degrees. Starting chamber pressure was around 0.5 mbar.
 
 
'''1,5 um AZ5214E resist:'''
{| {{table}}
| align="center" |  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
   
|- style="background:LightGrey"
|- style="background:LightGrey"
|| Recipe || O2 flow || N2 flow || Power
|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
| 1 || 2 || 5 || 7 || 10 || 10
|-
|'''Etched Thickness (nm)'''|| 6,28 || 102,99 || 76,92 || N/A || N/A
|-
|-
| 1 || 70 || 70 || 150 || 14,2 || 16,3 || 47,6 || 123,2 || 854,3 || 862,1
|}
|-
|}
| 2 || 500 || 0 || 200 ||  || 8,1 || 32,9 || 271,1 || 495,6 || 446,2
 
 
'''1,5 um AZ5214E resist placed horizontally in the carrier:'''
{| {{table}}
| align="center" |  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
|-  
|'''Etched Thickness (nm)'''|| 63,03 || 143,32 || 304,29  || 372,59 || N/A
|-
|-
|}
|}
|}




Conny Hjort & Jesper Hanberg
'''1,5 um AZ701MiR resist:'''
September 2019
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
|-
|'''Etched Thickness (nm)'''|| 268,88 || 199,54 || 219,03 || 200,86 || 292,15
|-
|}
|}




'''1,5 um AZ 2020nLOF resist:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
|-
|'''Etched Thickness (nm)'''|| 1,68 || 76,51 || 169,72 || 481,96 || 272,59
|-
|}
|}
<br clear="all" />


=Plasma Asher 2=
''Jitka Urbánková & Jesper Hanberg, December 2019''
[[image:descum_graf.jpg|640px|thumb|Descum results plasma asher 2 - recipe 1]]


The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=200 LabManager] - '''requires login'''


Descum of AZ  Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.




'''recipe 1:'''
*O2 flow: 100 ml/min
*N2 flow: 100 ml/min
*Power: 150 W
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20
|-
|'''Etched Thickness (nm)'''|| 8,7 || 5,1 || 12,5 || 6,2 || 31,8 || 86,0 || 25,7 || 46,8 || 38,3 || 49,7 || 59,4 || 140,1 || 360,7
|-
|'''Initial temperature (°C)'''|| 28 || 21 || 31 || 21 || 22 || 28 || 25 || 24 || 21 || 24 || 24 || 22 || 22
|-
|}
|}


[[image:graf_descum-recipe2.png|640px|thumb|Descum results plasma asher 2 - recipe 2]]




'''recipe 2:'''
*O2 flow: 500 ml/min
*N2 flow: 0 ml/min
*Power: 200 W
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1 ||2 ||3 ||4 ||5 ||6 ||7 ||8 ||10 ||12 ||15 ||20
|-
|'''Etched Thickness (nm)'''||8,1 ||9,4 ||16,8 ||55,2 ||44,0 ||47,5 ||42,5 ||55,1 ||85,3 ||122,4 ||184,8 ||305,9
|-
|'''Initial temperature (°C)'''||22 ||21 ||21 ||22 ||22 ||22 ||21 ||21 ||20 ||21 ||21 ||22
|-
|}
|}


A linear time dependence was observed after etching 7 minutes or more (recipe 2).
<br clear="all" />


=Plasma Asher 3: Descum=
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''


Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time.
The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).




'''Ashing of  AZ MiR701 resist:'''<br>
You can use two different descum process developments: you can either change power settings or processing chamber pressure.




'''Testing different power settings:'''
[[image:AZMIR701_power_settings.png|640px|thumb|Descum results for different power settings]]


'''Recipe settings:'''
*O2 flow: 5 sccm
*N2 flow: 0
*Pressure: 0.2 mbar
*Power: Varied




'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Power
|-
|'''recipe 1''' || 50/0 || 52/31 || 50%
|-
|'''recipe 2''' || 100/0 || 53/31 || 100%
|-
|'''recipe 3''' || 20/0 || 51/34 || 20%
|-
|}
|}
<br clear="all" />




'''Testing different pressure settings:'''
[[image:AZMIR701_pressure_settings.png|640px|thumb|Descum results for different pressure settings]]


'''Recipe settings:'''
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)




'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 5 || 0,2
|-
|'''recipe 2''' || 100/0 || 37/38 || 45 || 0,8
|-
|}
|}
<br clear="all" />


'''Ashing of AZ5214E resist:'''
[[image:AZ5214E_pressure_settings.png|640px|thumb|Descum results for different pressure settings]]




----
'''Recipe settings:'''
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)


===Plasma asher 2 ===


[[Image:descum_graf.jpg|right|frame|Descum results]]
'''Experiment parameters:'''
{| {{table}}
| align="center" |  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 17 || 0,4
|-
|'''recipe 2''' || 100/0 || 37/39 || 45 || 0,8
|-
|}
|}
<br clear="all" />

Latest revision as of 13:55, 10 May 2023

The contents on this page, including all images and pictures, was created by DTU Nanolab staff unless otherwise stated.

Feedback to this page: click here

Plasma Asher 1

Descum results plasma asher 1. September 2019

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager - requires login

Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.


Recipe 1:
Note: Plasma asher was cold before use

  • O2 flow: 70 ml/min
  • N2 flow: 70 ml/min
  • Power: 150 W
Ashing time (min) 1 2 5 7 10 10
Etched Thickness (nm) 14.2 16.3 47.6 123.2 854.3 862.1


Recipe 2:
Note: Plasma asher was cold before use

  • O2 flow: 500 ml/min
  • N2 flow: 0 ml/min
  • Power: 500 W
Ashing time (min) 1 2 5 7 10 10
Etched Thickness (nm) - 8.1 32.9 271.1 495.6 446.2


Descum tests on UV resists

Conny Hjort & Jesper Hanberg, September 2021

Descum results plasma asher 1. August 2021

Descum of different resists, AZ5214E, AZ701 MiR and AZ2020 nLOF, on a single 100mm wafer was tested. Wafer was placed vertically in the middle of glass carrier.

Recipe settings:
Note: plasma Asher was cold before use.

  • O2 flow: 70 ml/min
  • N2 flow: 70 ml/min

Power: 150 W

Minor temperature rise during processing was observed, but not more than 5 degrees. Starting chamber pressure was around 0.5 mbar.


1,5 um AZ5214E resist:

Ashing time (min) 1 2 3 5 7
Etched Thickness (nm) 6,28 102,99 76,92 N/A N/A


1,5 um AZ5214E resist placed horizontally in the carrier:

Ashing time (min) 1 2 3 5 7
Etched Thickness (nm) 63,03 143,32 304,29 372,59 N/A


1,5 um AZ701MiR resist:

Ashing time (min) 1 2 3 5 7
Etched Thickness (nm) 268,88 199,54 219,03 200,86 292,15


1,5 um AZ 2020nLOF resist:

Ashing time (min) 1 2 3 5 7
Etched Thickness (nm) 1,68 76,51 169,72 481,96 272,59


Plasma Asher 2

Jitka Urbánková & Jesper Hanberg, December 2019

Descum results plasma asher 2 - recipe 1

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager - requires login

Descum of AZ Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.


recipe 1:

  • O2 flow: 100 ml/min
  • N2 flow: 100 ml/min
  • Power: 150 W
Ashing time (min) 1 2 3 4 6 7 8 9 10 12 14 15 20
Etched Thickness (nm) 8,7 5,1 12,5 6,2 31,8 86,0 25,7 46,8 38,3 49,7 59,4 140,1 360,7
Initial temperature (°C) 28 21 31 21 22 28 25 24 21 24 24 22 22
Descum results plasma asher 2 - recipe 2


recipe 2:

  • O2 flow: 500 ml/min
  • N2 flow: 0 ml/min
  • Power: 200 W
Ashing time (min) 1 2 3 4 5 6 7 8 10 12 15 20
Etched Thickness (nm) 8,1 9,4 16,8 55,2 44,0 47,5 42,5 55,1 85,3 122,4 184,8 305,9
Initial temperature (°C) 22 21 21 22 22 22 21 21 20 21 21 22

A linear time dependence was observed after etching 7 minutes or more (recipe 2).

Plasma Asher 3: Descum

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager - requires login

Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time. The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).


Ashing of AZ MiR701 resist:
You can use two different descum process developments: you can either change power settings or processing chamber pressure.


Testing different power settings:

Descum results for different power settings

Recipe settings:

  • O2 flow: 5 sccm
  • N2 flow: 0
  • Pressure: 0.2 mbar
  • Power: Varied


Experiment parameters:

FW/REV C2/C1 Power
recipe 1 50/0 52/31 50%
recipe 2 100/0 53/31 100%
recipe 3 20/0 51/34 20%



Testing different pressure settings:

Descum results for different pressure settings

Recipe settings:

  • O2 flow: varied
  • N2 flow: 0
  • Pressure: varied
  • Power: V100% (100 W)


Experiment parameters:

FW/REV C2/C1 Oxygen Pressure
recipe 1 100/0 53/31 5 0,2
recipe 2 100/0 37/38 45 0,8


Ashing of AZ5214E resist:

Descum results for different pressure settings


Recipe settings:

  • O2 flow: varied
  • N2 flow: 0
  • Pressure: varied
  • Power: V100% (100 W)


Experiment parameters:

FW/REV C2/C1 Oxygen Pressure
recipe 1 100/0 53/31 17 0,4
recipe 2 100/0 37/39 45 0,8


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