Jump to content

Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace: Difference between revisions

← Older edit
VisualWikitext
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,330 edits
No edit summary
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,330 edits
No edit summary
 
(3 intermediate revisions by 3 users not shown)
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Wet_oxidation_C1_furnace click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Wet_oxidation_C1_furnace click here]'''


The Anneal Oxide furnace (C1) is the used for annealing, wet and dry oxidation of 4" and 6" wafers.


Water vapour for wet oxidation is generated by use of a steamer ([[media:RASIRC_Steam_generator.pdf|RASIRC Steam Generator ]] ), which gives a very good oxide quality and uniformity.
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


RCA cleaning is not required for new silicon wafers. Wafers from the A-stack, B-stack and E-stack furnaces and wafers from PECVD4 can go directly into the furnace. All other processed wafers will have to be RCA cleaned, before they are allowed in the furnace.


The Anneal Oxide furnace (C1) is the used for annealing, and for dry and wet oxidation of 4" and 6" wafers.


Water vapour for wet oxidation is generated by use of a steamer, which gives a very good oxide quality and uniformity.


A new steamer has been installed in August 2024. The new steamer is from Bronkhorst and similar to the one on the E1. The old steamer was from Rasirc.
<!-- ([[media:RASIRC_Steam_generator.pdf|RASIRC Steam Generator ]] )-->


The wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer ([[media:RASIRC_Steam_generator.pdf|RASIRC Steam Generator ]] ), which gives a very good film uniformity. The advantage of this furnace is the brand new wafers no need RCA clean before.


==Calculation for wet oxidation==
==Calculation for wet oxidation==
<b><span style="color:Red">The information is this section is not up-to-date, because it is based on oxidation results obtained with the old Rasirc steamer. This steamer has been replaced with a Bronkhorst steamer in August 2024, and this has slightly affected the oxidation rate for wet oxide.</span></b>


The following links give an approximate oxide time/thickness based on prediction equations from the following experiments:
The following links give an approximate oxide time/thickness based on prediction equations from the following experiments:
Line 19: Line 24:


==Test of the wet oxidation by steamer==   
==Test of the wet oxidation by steamer==   
''by Patama Pholprasit @danchip in October 2014''
 
<b><span style="color:Red">The information is this section is not up-to-date, because it is based on oxidation results obtained with the old Rasirc steamer. This steamer has been replaced with a Bronkhorst steamer in August 2024, and this has slightly affected the oxidation rate for wet oxide.</span></b>
 
''by Patama Pholprasit @nanolab in October 2014''
'''
'''
'''
'''
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/Oxidation/Wet_oxidation_C1_furnace"