Latest revision as of 22:21, 20 June 2025

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The Wordentec has been decomissioned in 2025. These results are kept for reference.

Silicon sputtering in the Wordentec

Silicon can be sputter deposited in the Wordentec as well as in the Sputter-System(Lesker) (details on sputtering Si in the Sputter-System Lesker here) and in the new Cluster Lesker (results here and here).

Parameters

Listed below are tried parameters, that can be used during Si deposition in the Wordentec. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness.

Do not use the power more than 180 W without consulting staff, since the Si target could break into a lot of small pieces.

	Settings 1	Settings 2
Process type	Sputtering	Sputtering
Power	130W	170W
Sputter pressure	5*10^-3 mbar	1*10^-2 mbar
Rate	About 0.7 Å/s	About 0.6 Å/s

@@ Line 1: / Line 1: @@
-== Silicon sputter==
+{{cc-nanolab}}
-Silicon can be sputter deposited in [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec.]]
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.labadviser.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Si_sputter_in_Wordentec click here]'''
+'''<p style="color:red;">The Wordentec has been decomissioned in 2025. These results are kept for reference.</p>'''
-'''Parameters'''
+= Silicon sputtering in the Wordentec=
-Listed below are tried parameters, that can be used during deposition. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness.
+Silicon can be sputter deposited in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] as well as in the [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] (details on sputtering Si in the Sputter-System Lesker [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker|here]]) and in the new [[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Cluster Lesker]] (results [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC1)|here]] and [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC3)|here]]).
-'''Please don´t use higher power than 180W''', since the target then could break into a lot of small pieces.
+==Parameters==
+Listed below are tried parameters, that can be used during Si deposition in the Wordentec. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness.
+'''Do not use the power more than 180 W without consulting staff''', since the Si target could break into a lot of small pieces.
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