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Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec: Difference between revisions

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== Silicon sputter==
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Silicon can be sputter deposited in [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec.]]
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.labadviser.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Si_sputter_in_Wordentec click here]'''


'''<p style="color:red;">The Wordentec has been decomissioned in 2025. These results are kept for reference.</p>'''


'''Parameters'''
= Silicon sputtering in the Wordentec=


Listed below are tried parameters, that can be used during deposition. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness.
Silicon can be sputter deposited in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] as well as in the [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] (details on sputtering Si in the Sputter-System Lesker [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker|here]]) and in the new [[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Cluster Lesker]] (results [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC1)|here]] and [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC3)|here]]).  


'''Please don´t use higher power than 180W''', since the target then could break into a lot of small pieces.  
 
==Parameters==
 
Listed below are tried parameters, that can be used during Si deposition in the Wordentec. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness.
 
'''Do not use the power more than 180 W without consulting staff''', since the Si target could break into a lot of small pieces.  


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| Rate
| Rate
| About 0,7 Å/s  
| About 0.7 Å/s  
| About 0,6 Å/s  
| About 0.6 Å/s  
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|-
|}
|}