Specific Process Knowledge/Thermal Process/C2 Furnace III-V oxidation: Difference between revisions

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General Purpose Annealing furnace (C2)

The General Purpose Annealing furnace (C2) is a Tempress horizontal furnace located in the furnace C stack.

The furnace has from September 2024 become a general purpose annealing furnace. It means that it can be used for annealing of different samples and different materials, such as silicon substrates with metal layers.

Annealings can be performed in a nitrogen atmosphere, with an nitrogen flow up to 10 SLM.

An annealing temperature of maximum 600 C is allowed in the furnace, with a ramp rate of up to 10°C/min. The standby temperature is set to 250°C.

Samples must be able to tolerate the annealing temperature. A permission from the Thin Film group is also required, before samples are annealed in the furnace.

Please also check the cross contamination information in LabManager, before you use the furnace. And note that samples that have been annealed in the furnace are considered "dirty" or "contaminated with metal traces" and are therefore not allowed in any other furnaces afterwards.

4" wafers can be placed horizontally in a quartz boat in the furnace, and up to two 6" wafer can be placed horizontally on two boats. Small sample are placed on a 6" carrier wafer (with or without a recess) on a quartz boat.

The motor for automatic opening and closing of furnace door is broken, and the door therefore has to be opened and closed manually.

The user manual and contact information can be found in LabManager:

General Purpose Annealing furnace (C2)

Overview of the performance of the General Purpose Annealing furnace and some process related parameters

Purpose		Annealing of different samples and sample materials
Process parameter range	Annnealing temperature	Up to 600 ^oC, temperature ramp rate up to 10 ^oC/s
	Standby temperature	250 ^oC/s
	Process pressure	1 atm
	Gases on the system	N₂, max flow 10 SLM
Substrates	Batch size	Up to 30 4" wafers 1-2 6" wafers (placed horizontally on the boats) Several smaller samples (placed horizontally on a 6" carrier wafer placed on the boat)
Substrates	Substrate materials allowed	Most materials, but samples must be able to tolerate the annealing temperature, and a permission from the Thin Film group is required

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+{{cc-nanolab}}
-=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>=
+'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C2_Furnace_III-V_oxidation click here]'''
+<br>
+<br>
+==General Purpose Annealing furnace (C2) ==
-==III-V Oxidation furnace (C2)==
+The General Purpose Annealing furnace (C2) is a Tempress horizontal furnace located in the furnace C stack.
-The III-V Oxidaiont furnace (C2) is being use on August 2019 for wet thermal oxidation of III-V devices instead of the III-V ovn, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.
+The furnace has from September 2024 become a general purpose annealing furnace. It means that it can be used for annealing of different samples and different materials, such as silicon substrates with metal layers.
-The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded.
+Annealings can be performed in a nitrogen atmosphere, with an nitrogen flow up to 10 SLM.
+An annealing temperature of maximum 600 C is allowed in the furnace, with a ramp rate of up to 10°C/min. The standby temperature is set to 250°C.
+Samples must be able to tolerate the annealing temperature. A permission from the Thin Film group is also required, before samples are annealed in the furnace.
+Please also check the cross contamination information in LabManager, before you use the furnace. And note that samples that have been annealed in the furnace are considered "dirty" or "contaminated with metal traces" and are therefore not allowed in any other furnaces afterwards.
+" wafers can be placed horizontally in a quartz boat in the furnace, and up to two 6" wafer can be placed horizontally on two boats. Small sample are placed on a 6" carrier wafer (with or without a recess) on a quartz boat.
+The motor for automatic opening and closing of furnace door is broken, and the door therefore has to be opened and closed manually.
-Before use, samples have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.
-Please check the cross contamination information in LabManager before you use the furnace.
 '''The user manual and contact information can be found in LabManager:'''
-'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=88  III-V Oxidation furnace (C2)]'''
+'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=88  General Purpose Annealing furnace (C2)]'''
-==Process knowledge==
-*[[Specific_Process_Knowledge/Thermal_Process/Oxidation/Oxidation_on_III-V_oxidation_furnace_(C2)|Standard wet oxidation recipe on the III-V oxidation furnace]]
-==Overview of the performance of the III-V Oven and some process related parameters==
+==Overview of the performance of the General Purpose Annealing furnace and some process related parameters==
@@ Line 28: / Line 35: @@
 |style="background:LightGrey; color:black"|
 |style="background:WhiteSmoke; color:black"|
-*Wet oxidation of III-V dvices
+*Annealing of different samples and sample materials
 |-
-!style="background:silver; color:black" align="center"|Performance
+!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range
-|style="background:LightGrey; color:black"|Lateral oxidation rate
+|style="background:LightGrey; color:black"|Annnealing temperature
 |style="background:WhiteSmoke; color:black"|
-*Very sample dependent
+*Up to 600 <sup>o</sup>C, temperature ramp rate up to 10 <sup>o</sup>C/s
 |-
-!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
+|style="background:LightGrey; color:black"|Standby temperature
-|style="background:LightGrey; color:black"|Process temperature
 |style="background:WhiteSmoke; color:black"|
-*420 <sup>o</sup>C
+*250 <sup>o</sup>C/s
 |-
 |style="background:LightGrey; color:black"|Process pressure
@@ Line 44: / Line 50: @@
 *1 atm
 |-
-|style="background:LightGrey; color:black"|Gasses on the system
+|style="background:LightGrey; color:black"|Gases on the system
 |style="background:WhiteSmoke; color:black"|
-*N<sub>2</sub> (bobler)
+*N<sub>2</sub>, max flow 10 SLM
-*N<sub>2</sub>
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*Several smaller samples (placed vertically on a quartz plate)
+*Up to 30 4" wafers
+*1-2 6" wafers (placed horizontally on the boats)
+*Several smaller samples (placed horizontally on a 6" carrier wafer placed on the boat)
 |-
 | style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
-*III-V devices
+*Most materials, but samples must be able to tolerate the annealing temperature, and a permission from the Thin Film group is required
-*Silicon
 |-
 |}