Specific Process Knowledge/Etch/DRIE-Pegasus/DUVetch: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/DUVetch click here]'''
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<!--Checked for updates on 14/5-2018 - ok/jmli -->
<!--Checked for updates on 14/5-2018 - ok/jmli -->
<!--Checked for updates on 24/8-2021. ok/ jmli-->


== Etch processes designed for stepper resists ==  
== Etch processes designed for stepper resists ==  
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= dfasdf =
= With units =


{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
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| sccm
| sccm
| W
| W
| W| W| W
| W
 
| W
| W
|-
|-
! NBoost04  <!--recipe name  -->
! NBoost04  <!--recipe name  -->
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|+ '''Process parameters'''
|+ '''Process parameters'''
|-
|-
! rowspan="2" width="100"| Recipe
! rowspan="3" width="100"| Recipe
! rowspan="2" width="20"| Step
! rowspan="3" width="20"| Step
! rowspan="2" width="20"| Temp.
! rowspan="2" width="20"| Temp.
! colspan="6" | Deposition step
! colspan="6" | Deposition step
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! width="40" | Coil  
! width="40" | Coil  
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters#Platen power|Platen]]  
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters#Platen power|Platen]]  
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters#Hardware | HW]]  
| rowspan="2" | [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters#Hardware | HW]]  
! width="40" | Runs
! width="40" rowspan="2" | Runs
! width="300" | Key words
! width="300" rowspan="2" | Key words
|-
| degs
| s
| mt
| sccm
| sccm
| sccm
| W
| s
| mt
| sccm
| sccm
| sccm
| W
| W
|-
|-
! polySOI-10    <!-- recipe name -->
! polySOI-10    <!-- recipe name -->

Latest revision as of 15:14, 24 August 2021

Feedback to this page: click here

Etch processes designed for stepper resists

The stepper produces features down to 200 nm. Here, etch processes especially designed for stepper patterns and resists are described. We intend to develop them continuously so keep an eye on this page. The best ones so far are:

Process parameters
Recipe Step Temp. Deposition step Etch step Process
Time Pressure C4F8 SF6 O2 Coil Time Pressure C4F8 SF6 O2 Coil Platen HW Runs Keywords
B M B M B M B M B M B M B M
NBoost04 A 20 2.8 5 60 0 0 500 1.5 3.5 30% 5 0 20 100 100 0 0 500 500 50 10 LF+B100 2 VERY nice: scallops, straight sidewalls


Process parameters
Recipe Step Temp. Deposition step Etch step Process observations
Time Pressure C4F8 SF6 O2 Coil Time Pressure C4F8 SF6 O2 Coil Platen HW Runs Key words
polySOI-10 etch 20 2.5 10 50 0 0 600 5 10 20 60 5 400 40 - 5 very nice, blurred scallops
polySOI-10a etch 20 2.5 10 50 0 0 600 5 10 10 70 5 400 40 - 200+ Works only with limited open area - probably less than 20 %, very stable, excellent and extensive track record


With units

Process parameters
Recipe Step Temp. Deposition step Etch step Process
Time Pressure C4F8 SF6 O2 Coil Time Pressure C4F8 SF6 O2 Coil Platen HW Runs Keywords
B M B M B M B M B M B M B M
degs s mt sccm sccm sccm W s s % mt sccm sccm sccm sccm sccm sccm W W W W
NBoost04 A 20 2.8 5 60 0 0 500 1.5 3.5 30% 5 0 20 100 100 0 0 500 500 50 10 LF+B100 2 VERY nice: scallops, straight sidewalls


Process parameters
Recipe Step Temp. Deposition step Etch step Process observations
Time Pressure C4F8 SF6 O2 Coil Time Pressure C4F8 SF6 O2 Coil Platen HW Runs Key words
degs s mt sccm sccm sccm W s mt sccm sccm sccm W W
polySOI-10 etch 20 2.5 10 50 0 0 600 5 10 20 60 5 400 40 - 5 very nice, blurred scallops
polySOI-10a etch 20 2.5 10 50 0 0 600 5 10 10 70 5 400 40 - 200+ Works only with limited open area - probably less than 20 %, very stable, excellent and extensive track record
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