Specific Process Knowledge/Etch/DRIE-Pegasus/processC: Difference between revisions
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<!--Checked for updates on 14/5-2018 - ok/jmli --> | <!--Checked for updates on 14/5-2018 - ok/jmli --> | ||
== Process C == | == Process C == | ||
{{contentbydryetch}} | |||
<!--Checked for updates on 2/02-2023 - ok/jmli --> | |||
Process C is | Process C is intended to be used on features in the sub 2-3 µm range. The recipe was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %. | ||
The 100 mm wafers had an Al mask made by lift-off: | The 100 mm wafers had an Al mask made by lift-off: | ||
# 80 nm of spin coated ZEP520A E-beam resist | # 80 nm of spin coated ZEP520A E-beam resist | ||
# Patterned by E-beam | # Patterned by E-beam lithography | ||
# 20 nm Al deposited and patterned by lift-off | # 20 nm Al deposited and patterned by lift-off | ||
# ~ 99 % etch load | # ~ 99 % etch load | ||
| Line 20: | Line 22: | ||
! Average result | ! Average result | ||
|- | |- | ||
! Etch rate ( | ! Etch rate (nm/min) | ||
| Not specified | | Not specified | ||
| | | | ||
|- | |- | ||
! Etched depth ( | ! Etched depth (nm) | ||
| 300 | | 300 | ||
| | | | ||
| Line 37: | Line 39: | ||
|- | |- | ||
! Selectivity to resist | ! Selectivity to resist | ||
| Not | | Not specified | ||
| | | | ||
|- | |- | ||
| Line 79: | Line 81: | ||
|- | |- | ||
! Common | ! Common | ||
| colspan="4" | Temperature 10 | | colspan="4" | Temperature 10 degsree, HBC 10 torr, long funnel, with baffle & 100 mm spacers | ||
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Latest revision as of 12:02, 28 June 2023
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Process C
Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab
Process C is intended to be used on features in the sub 2-3 µm range. The recipe was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.
The 100 mm wafers had an Al mask made by lift-off:
- 80 nm of spin coated ZEP520A E-beam resist
- Patterned by E-beam lithography
- 20 nm Al deposited and patterned by lift-off
- ~ 99 % etch load
| Parameter | Specification | Average result |
|---|---|---|
| Etch rate (nm/min) | Not specified | |
| Etched depth (nm) | 300 | |
| Scallop size (nm) | < 30 | |
| Profile (degs) | 85 +/- 5 | |
| Selectivity to resist | Not specified | |
| Undercut (nm) | < 30 | |
| Uniformity (%) | < 3.5 | |
| Repeatability (%) | <4 |
| Parameter | Etch | |||
|---|---|---|---|---|
| Gas flow (sccm) | SF6 38 C4F8 70 | |||
| Process time (mm:ss) | 01:30 | |||
| Pressure (mtorr) | 4 | |||
| Coil power (W) | 450 | |||
| Platen power (W) | 100 | |||
| Common | Temperature 10 degsree, HBC 10 torr, long funnel, with baffle & 100 mm spacers | |||
