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= Sample imaging =


== Sample imaging ==
In the cleanroom at DTU Nanolab a number of instruments are available for sample imaging, including several optical microscopes, and optical profiler, a number of SEMs (scanning electron microscopes), an AFM (atomic force microscope) and two stylus profilers (Dektak).


A Danchip a number of instruments are available for sample imaging, including several optical microscopes, and optical profiler, a number of SEMs (scanning electron microscopes), an AFM (atomic force microscope) and two stylus profilers (Dektak).  
The optical microscopes provide fast and easy information about most samples without sample preparation. The resolution is limited by the objectives and wavelength of the light. Also the depth of focus is limited, especially for higher magnifications.  


The optical microscopes provide fast and easy information about most samples without sample preparation. The resolution is limited by the objectives and wavelenght of the light. Also the depth of focus is limited, especially for higher magnifications.
The main purpose of the optical profiler is to obtain 3D images of different samples and to measure surface roughness or step heights, also for structures with high aspect ratio. Two different types of measurements can be done - confocal and interference (phase shift and vertical scanning interference) measurements. It is possible to measurement height aspect ratio structures. The resolution is limited by the objectives and the pixel size on the screen.
 
The main purpose of the optical profiler is to obtain 3D images of different samples and to measure surface roughness or step heights, also for structures with high aspect ratio. Two different types of measurements can be done - confocal and interference (phase shift and vertical scanning interference) measurements. It is possible to measurement hight aspect ratio structures. The resolution is limited by the objectives and the pixel size on the screen.


The SEMs are used for inspection of different sample. The resolution is very good - It is possible to obtaion good images of structures smaller then 100 nm with all SEMs in the cleanroom. Samples can be either flat or tilted.
The SEMs are used for inspection of different sample. The resolution is very good - It is possible to obtaion good images of structures smaller then 100 nm with all SEMs in the cleanroom. Samples can be either flat or tilted.
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'''Imaging Equipment:'''
*[[Specific_Process_Knowledge/Characterization/Optical_microscope|Optical Microscopes]]


*[[Specific_Process_Knowledge/Characterization/Optical_microscope|Sample imaging using optical microscopes]]
*[[Specific_Process_Knowledge/Characterization/Sensofar S Neox|Optical Profiler (e.g. ''Sensofar S Neox'')]]
 
*[[Specific_Process_Knowledge/Characterization/Profiler#Optical_Profiler_.28Sensofar.29|Sample imaging using optical profiler (Sensofar)]]


*[[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy|Sample imaging using SEM]]
*[[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy|Scanning Electron Microscopy (SEM)]]


*[[Specific_Process_Knowledge/Characterization/AFM:_Atomic_Force_Microscopy|Sample imaging using AFM (NanoMan)]]
*[[Specific_Process_Knowledge/Characterization/AFM:_Atomic_Force_Microscopy|Atomic Force Microscopy (AFM)]]


*[[Specific_Process_Knowledge/Characterization/Profiler#Dektak_XTA_new_stylus_profiler|Sample imaging using stylus profiler (Dektak)]]
*[[Specific_Process_Knowledge/Characterization/Dektak XTA|Stylus Profiler (e.g ''Dektak XTA'')]]


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==Comparison of optical microscope, optical profiler, SEM, AFM and stylus profiler for sample imaging==
==Comparison of optical microscope, optical profiler, SEM, AFM and stylus profiler for sample imaging==


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!
!
![[Specific_Process_Knowledge/Characterization/Optical_microscope|Optical microscopes]]
![[Specific_Process_Knowledge/Characterization/Optical_microscope|Optical microscopes]]
![[Specific_Process_Knowledge/Characterization/Profiler#Optical_Profiler_.28Sensofar.29|Optical profiler]]
![[Specific_Process_Knowledge/Characterization/Sensofar S Neox|Optical profiler]]
![[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy|SEM]]
![[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy|SEM]]
![[Specific_Process_Knowledge/Characterization/AFM:_Atomic_Force_Microscopy|AFM]]
![[Specific_Process_Knowledge/Characterization/AFM:_Atomic_Force_Microscopy|AFM]]
![[Specific_Process_Knowledge/Characterization/Profiler#Dektak_XTA_new_stylus_profiler|Stylus profiler]]
![[Specific_Process_Knowledge/Characterization/Dektak XTA|Stylus profiler]]
|-
|-


<!--
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:LightGrey; color:black"
!Generel description
!Generel description
|Optical microscope  
|Optical microscope  
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[[Specific_Process_Knowledge/Characterization/SEM_Supra_2| SEM Supra 2]],  
[[Specific_Process_Knowledge/Characterization/SEM_Supra_2| SEM Supra 2]],  
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3| SEM Supra 3]],  
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3| SEM Supra 3]],  
[[Specific_Process_Knowledge/Characterization/SEM_LEO| SEM Leo]],
[[Specific_Process_Knowledge/Characterization/SEM_Tabletop_1| SEM Tabletop 1]])
[[Specific_Process_Knowledge/Characterization/SEM_Tabletop_1| SEM Tabletop 1]])


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(NanoMan)
(NanoMan)
|Stylus profiler  
|Stylus profiler  
(Dektak 8, Dektak XTA)
(Dektak XTA, Dektak 150, Dektak ST)
|-
|-
!-->


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
!Operation priciple
!Operation priciple
|Light
|Light
|Light
|Light
|
|
Detection of
*Secondary electrons
*Secondary electrons
*Backscattered electrons
*Backscattered electrons
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|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:LightGrey; color:black"
!Sample information
!Sample information
|
|
|3D surface topgraphy
|3D surface topography
*Step height
*Step height
*Surface roughness
*Surface roughness
*Film thickness
*Film thickness
|
|
*Structure dimensions
*Surface topography
*Material composition
|3D surface topography
|3D surface topography
|3D surface topography (if you make a map scan)
|3D surface topography (if you make a map scan)
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|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
!Vertical resolution
!Vertical resolution
|
|
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*PSI: 0.01 nm
*PSI: 0.01 nm
*VSI: 1 nm
*VSI: 1 nm
|1-20 nm
|1-100 nm (lowest resolution for the SEM Tabletop 1)
Depends on what SEM you use
Depends on what SEM you use
|< 1Å  
|< 1Å  
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|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:LightGrey; color:black"
!Horizontal resolution
!Horizontal resolution
|
|
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*10x objective: 4.95 &mu;m  
*10x objective: 4.95 &mu;m  
*100x objective: 0.495 &mu;m
*100x objective: 0.495 &mu;m
|1-20 nm
|1-100 nm  
Depends on what SEM you use
Depends on what SEM you use
|Down to 1.4 nm
|Down to 1.4 nm
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|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
!Resolution limitations
!Resolution limitations
|Objectives and wavelenght of light
|Objectives and wavelength of light
|Objectives and pixel size on the screen
|Objectives and pixel size on the screen
|Interaction volume
|Interaction volume
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|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:LightGrey; color:black"
!Magnification
!Magnification
|
|
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|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
!XY range/field of view
!XY range/field of view
|
|
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|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:LightGrey; color:black"
!Z range
!Z range
|
|
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|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
!Working distance
!Working distance
|Few mm
|Few mm
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|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:LightGrey; color:black"
!Sampling speed
!Sampling speed
|
|
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|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
!Sample requirements  
!Sample requirements  
|None
|None
|
|
|Samples have to be (semi)conducting, but may have a thin (> ~ 5 µm) layers of non-conducting materials on top.
|Samples have to be (semi)conducting, but may have a thin (> ~ 5 µm) layers of non-conducting materials on top.
Non-conducting samples can be studied using VP (variable pressure) mode in the SEM Suora 1, 2 and 3
|Sample dimensions have to be smaller than stylus dimensions
|Sample dimensions have to be smaller than stylus dimensions
|Sample dimensions have to be smaller than tip dimensions
|Sample dimensions have to be smaller than tip dimensions
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|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:LightGrey; color:black"
!Batch size
!Batch size
|
|
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*One 100 mm wafer  
*One 100 mm wafer  
*One 150 mm wafer  
*One 150 mm wafer  
*One 2000 mm wafer  
:(not possible to inspect entire wafer in SEM Supra 1 and 3)
:(only Supra 2, not possible to inspect entire wafer)
*One 200 mm wafer  
:(only SEM Supra 2, not possible to inspect entire wafer)
|
|
*One small sample
*One small sample
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|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!'''Allowed materials'''
|
|
*All standard cleanroom materials (optical measument)
*All standard cleanroom materials (optical measurement)
|
|
*All standard cleanroom materials (optical measurement)
*All standard cleanroom materials (optical measurement)
|
|
*All sample materials, expect:  
*All sample materials, expect:  
Samples that may disintegrate, produce dust/particles or degas (e.g. wet polymers and powders. Samples with resist or polymer should be properly baked and outgassed before SEM inspection
:Samples that may disintegrate, produce dust/particles or degas (e.g. wet polymers and powders). Samples with resist or polymer should be properly baked and outgassed before SEM inspection
|
|
*All standard cleanroom materials, except samples that might damage or stick to the tip.
*All standard cleanroom materials, except samples that might damage or stick to the tip.
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|-
|-
|}
|}
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<br>


 
== Optical Microscopes ==
 
 
 
 
 
The list of instruments for sample imaging available at Danchip includes 6 [[Specific Process Knowledge/Characterization/Optical microscope|optical microscopes]] , three [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|scanning electron microscopes]] (SEM's) and an [[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|atomic force microscope]] (AFM). These instruments cover a wide range of applications.
 
=== The optical microscopes ===


There is a lot of [[Specific Process Knowledge/Characterization/Optical microscope|optical microscopes]] scattered around in the cleanroom because they are in great need. They are useful if, for instance, you need to
There is a lot of [[Specific Process Knowledge/Characterization/Optical microscope|optical microscopes]] scattered around in the cleanroom because they are in great need. They are useful if, for instance, you need to
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Using the different options such as bright/dark field, polarizer or transmitted/reflected light one can find a better signal for a specific need. Some of them have a camera that allows you to capture and store images.
Using the different options such as bright/dark field, polarizer or transmitted/reflected light one can find a better signal for a specific need. Some of them have a camera that allows you to capture and store images.


One of the advantages of the optical microscopes is that they provide fast and easy accessible information about any sample without any kind of sample preparation. They do, however, also have some limitations. Since the depth of focus is quite limited, especially at high magnifications, one will experience problems when trying to image strucutures that have been etched more than some 10 µm: One cannot focus on both the top and the bottom at the same time. Another disadvantage is the physical limit to the resolution that makes it impossible to image structures below 1 µm.
One of the advantages of the optical microscopes is that they provide fast and easy accessible information about any sample without any kind of sample preparation. They do, however, also have some limitations. Since the depth of focus is quite limited, especially at high magnifications, one will experience problems when trying to image structures that have been etched more than some 10 µm: One cannot focus on both the top and the bottom at the same time. Another disadvantage is the physical limit to the resolution that makes it impossible to image structures below 1 µm.
<br>
<br>


=== [[Specific Process Knowledge/Characterization/Profiler#Optical_Profiler_(Sensofar)|The optical profiler (Sensofar)]] ===
== Optical Profilers ==


The optical profiler provides standard microscope imaging, confocal imaging, confocal profiling, PSI (Phase Shift Interferometry), VSI (Vertical Scanning Interferometry) and high resolution thin film thickness measurement on a single instrument.  
An optical profiler, f.ex. [[Specific Process Knowledge/Characterization/Sensofar S Neox|Sensofar S Neox]], provides standard microscope imaging, confocal imaging, confocal profiling, PSI (Phase Shift Interferometry), VSI (Vertical Scanning Interferometry) and high resolution thin film thickness measurement on a single instrument.  


The main purpose is 3D topographic imaging of surfaces, Step height measurements in smaller trenches/holes than can be obtained with standard stylus method, roughness measurements with larger FOV than the AFM, but less horisontal resolution.
The main purpose is 3D topographic imaging of surfaces, Step height measurements in smaller trenches/holes than can be obtained with standard stylus method, roughness measurements with larger FOV than the AFM, but less horisontal resolution.
<br>
<br>


=== The scanning electron microscopes ===
== Scanning Electron Microscopes (SEM)==


Both shortcomings of the optical microscopes mentioned above are addressed by the use of a beam of electrons (as you do in a SEM) instead of light. The depth of focus and the resolution of a [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|scanning electron microscope]] are at least one order of magnitude better. The list of advantages of a SEM compared to an optical microscope includes:
Both shortcomings of the optical microscopes mentioned above are addressed by the use of a beam of electrons (as you do in a SEM) instead of light. The depth of focus and the resolution of a [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|scanning electron microscope]] are at least one order of magnitude better. The list of advantages of a SEM compared to an optical microscope includes:
* Much better depth of focus: Depending on the image setup it may be on the order of milimeters.
* Much better depth of focus: Depending on the image setup it may be on the order of millimeters.
* Much better resolution: Down to a few nanometers.
* Much better resolution: Down to a few nanometers.
* Much higher magnifications possible: Up to 500.000 times on some samples.
* Much higher magnifications possible: Up to 500.000 times on some samples.
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* Hardware: In order to work the SEM needs a chamber under vacuum and sophisticated electronics.
* Hardware: In order to work the SEM needs a chamber under vacuum and sophisticated electronics.
* Sample preparation and mounting: You may have to prep your sample in several ways, either coating, cleaving or mounting on specific sample holders.
* Sample preparation and mounting: You may have to prep your sample in several ways, either coating, cleaving or mounting on specific sample holders.
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=== The atomic force microscope ===
== Atomic Force Microscope (AFM)==


The [[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|atomic force microscope]] has limited use as a sample imaging instrument. In some cases the resolution of the SEM is not enough:
The [[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|atomic force microscope]] has limited use as a sample imaging instrument. In some cases the resolution of the SEM is not enough:

Latest revision as of 10:49, 28 May 2025

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Sample imaging

In the cleanroom at DTU Nanolab a number of instruments are available for sample imaging, including several optical microscopes, and optical profiler, a number of SEMs (scanning electron microscopes), an AFM (atomic force microscope) and two stylus profilers (Dektak).

The optical microscopes provide fast and easy information about most samples without sample preparation. The resolution is limited by the objectives and wavelength of the light. Also the depth of focus is limited, especially for higher magnifications.

The main purpose of the optical profiler is to obtain 3D images of different samples and to measure surface roughness or step heights, also for structures with high aspect ratio. Two different types of measurements can be done - confocal and interference (phase shift and vertical scanning interference) measurements. It is possible to measurement height aspect ratio structures. The resolution is limited by the objectives and the pixel size on the screen.

The SEMs are used for inspection of different sample. The resolution is very good - It is possible to obtaion good images of structures smaller then 100 nm with all SEMs in the cleanroom. Samples can be either flat or tilted.

The optical profiler provides standard microscope imaging, confocal imaging, confocal profiling, PSI (Phase Shift Interferometry), VSI (Vertical Scanning Interferometry) and high resolution thin film thickness measurement on a single instrument. The main purpose is 3D topographic imaging of surfaces, step height measurements in smaller trenches/holes than can be obtained with standard stylus method, roughness measurements with larger FOV than the AFM, but less horisontal resolution.

The AFM is used for inspection of nanoscale structures and for surface roughness measurements. The vertical resolution is very good. The horizontal resolution is limited by the tip, but it is possible to buy special tips for high aspect ratio structures. The scan speed is slow, and the field of view is very limited, so it is only possible to get information about a small area of the sample.

The Dektak is is stylus profiler. A step height measurement can be done very fast in a line scan. The vertical resolution is very good, but the horizontal resolution and the aspect ratio you can measure are limited by the tip. Stress measurements can also be done with the Dektak.


Imaging Equipment:


Comparison of optical microscope, optical profiler, SEM, AFM and stylus profiler for sample imaging

Optical microscopes Optical profiler SEM AFM Stylus profiler
Operation priciple Light Light

Detection of

  • Secondary electrons
  • Backscattered electrons
Atomic forces between tip and sample surface Contact
Sample information 3D surface topography
  • Step height
  • Surface roughness
  • Film thickness
  • Structure dimensions
  • Surface topography
  • Material composition
3D surface topography 3D surface topography (if you make a map scan)
Vertical resolution Confocal measurements:
  • 10x objective: <50 nm
  • 50x objective, NA 0.95: <1 nm

Interference measurements:

  • PSI: 0.01 nm
  • VSI: 1 nm
1-100 nm (lowest resolution for the SEM Tabletop 1)

Depends on what SEM you use

< 1Å
Horizontal resolution Three times pixel-to-pixel distance:
  • 10x objective: 4.95 μm
  • 100x objective: 0.495 μm
1-100 nm

Depends on what SEM you use

Down to 1.4 nm
Resolution limitations Objectives and wavelength of light Objectives and pixel size on the screen Interaction volume Tip shape (standard tips: width 10 nm, angle 45o). It is possible to buy Super Sharp tips and High Aspect Ratio tips Stylus shape (width 5 μm, angle 45o)
Magnification
XY range/field of view
  • 10x magnification: 1.27 × 0.995 mm
  • 100x magnification: 0.127 × 0.095 mm
Depending on detector, working distance and magnification Camera: 150 × 675 μm

X-Y scan range: Up to 90 × 90 μm

Z range 1 µm (can go up to 6µm with special settings)
Working distance Few mm

Depends on what objective you use

  • 10x objective: 17.5 mm
  • 50x objective, NA 0.95: 0.3 mm
3 mm - 20 mm Contact/tapping measurement Contact measurement
Sampling speed Depends on FOV and image resolution:
  • FOV: 10-90 µm ~8:30 min (256x256 pixels)
  • FOV: -10 µm ~4:15 min (256x256 pixels)
Sample requirements None Samples have to be (semi)conducting, but may have a thin (> ~ 5 µm) layers of non-conducting materials on top.

Non-conducting samples can be studied using VP (variable pressure) mode in the SEM Suora 1, 2 and 3

Sample dimensions have to be smaller than stylus dimensions Sample dimensions have to be smaller than tip dimensions
Batch size
  • Small samples
  • One 50 mm wafer
  • One 100 mm wafer
  • One 150 mm wafer
  • One 200 mm wafer

Stage size depends on what microscope you use

  • Small samples
  • One 50 mm wafer
  • One 100 mm wafer
  • One 150 mm wafer
  • Small samples
  • One 50 mm wafer
  • One 100 mm wafer
  • One 150 mm wafer
(not possible to inspect entire wafer in SEM Supra 1 and 3)
  • One 200 mm wafer
(only SEM Supra 2, not possible to inspect entire wafer)
  • One small sample
  • One 50 mm wafer
  • One 100 mm wafer
  • One 150 mm wafer
  • One small sample
  • One 50 mm wafer
  • One 100 mm wafer
  • One 150 mm wafer
Allowed materials
  • All standard cleanroom materials (optical measurement)
  • All standard cleanroom materials (optical measurement)
  • All sample materials, expect:
Samples that may disintegrate, produce dust/particles or degas (e.g. wet polymers and powders). Samples with resist or polymer should be properly baked and outgassed before SEM inspection
  • All standard cleanroom materials, except samples that might damage or stick to the tip.
  • All standard cleanroom materials, expect samples that might damage or stick to the tip.



Optical Microscopes

There is a lot of optical microscopes scattered around in the cleanroom because they are in great need. They are useful if, for instance, you need to

  • inspect the quality of UV exposed photoresist when doing photolithography,
  • check for particles on wafers that have been processed in the furnaces or the PECVD's,
  • check the quality of KOH etched structures or
  • generally verify any in batch process.

Using the different options such as bright/dark field, polarizer or transmitted/reflected light one can find a better signal for a specific need. Some of them have a camera that allows you to capture and store images.

One of the advantages of the optical microscopes is that they provide fast and easy accessible information about any sample without any kind of sample preparation. They do, however, also have some limitations. Since the depth of focus is quite limited, especially at high magnifications, one will experience problems when trying to image structures that have been etched more than some 10 µm: One cannot focus on both the top and the bottom at the same time. Another disadvantage is the physical limit to the resolution that makes it impossible to image structures below 1 µm.

Optical Profilers

An optical profiler, f.ex. Sensofar S Neox, provides standard microscope imaging, confocal imaging, confocal profiling, PSI (Phase Shift Interferometry), VSI (Vertical Scanning Interferometry) and high resolution thin film thickness measurement on a single instrument.

The main purpose is 3D topographic imaging of surfaces, Step height measurements in smaller trenches/holes than can be obtained with standard stylus method, roughness measurements with larger FOV than the AFM, but less horisontal resolution.

Scanning Electron Microscopes (SEM)

Both shortcomings of the optical microscopes mentioned above are addressed by the use of a beam of electrons (as you do in a SEM) instead of light. The depth of focus and the resolution of a scanning electron microscope are at least one order of magnitude better. The list of advantages of a SEM compared to an optical microscope includes:

  • Much better depth of focus: Depending on the image setup it may be on the order of millimeters.
  • Much better resolution: Down to a few nanometers.
  • Much higher magnifications possible: Up to 500.000 times on some samples.
  • Quantification: As a metrology instrument the SEM is absolutely necessary.
  • The stage: It allows you to image your sample from almost any angle.
  • Tunability: One can tune the image in a number of ways in order to enhance topography or material contrast.
  • Elemental analysis: The EDX detector allows you to make detailed investigation of the sample composition.

The SEM is, however, much more complicated in terms of

  • Operation: You need training and it takes some experience and skill to obtain good images.
  • Hardware: In order to work the SEM needs a chamber under vacuum and sophisticated electronics.
  • Sample preparation and mounting: You may have to prep your sample in several ways, either coating, cleaving or mounting on specific sample holders.


Atomic Force Microscope (AFM)

The atomic force microscope has limited use as a sample imaging instrument. In some cases the resolution of the SEM is not enough:

  • Nanometer sized particles on a surface
  • If you need to know the exact height (z) of some surface structures. The SEM only measures lateral (x,y) distances precisely.
  • Surface roughness