Specific Process Knowledge/Back-end processing/Polisher CMP: Difference between revisions

From LabAdviser
Rkch (talk | contribs)
Rkch (talk | contribs)
No edit summary
 
(4 intermediate revisions by 2 users not shown)
Line 1: Line 1:
'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
'''All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.'''
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Back-end_processing/Polisher_CMP click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Back-end_processing/Polisher_CMP click here]'''  


Line 6: Line 11:
== Polisher (CMP) ==
== Polisher (CMP) ==


[[image:Cmp_picture.jpg|400px|right|thumb|The Logitech PM5 Polisher/Lapper]]
[[image:Cmp_picture.jpg|400px|right|thumb|The Logitech PM5 Polisher/Lapper in cleanroom A-5]]


The Logitech Orbis Polisher (CMP) is for polishing wafers (removing material in the nm range) it is not for thinning down wafers or other substrates.
The Logitech Orbis Polisher (CMP) is for polishing wafers (removing material in the nm range) it is not for thinning down wafers or other substrates. After CMP it is recommended to use the '''[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Wafer_cleaning/Post_CMP_Cleaner Post CMP Cleaner]''' to clean the sample for slurry residues left by the CMP.




Line 16: Line 21:
<!-- give the link to the equipment info page in LabManager: -->
<!-- give the link to the equipment info page in LabManager: -->
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=430 The Logitech Orbis (CMP) in LabManager]
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=430 The Logitech Orbis (CMP) in LabManager]


==Equipment performance and process related parameters==
==Equipment performance and process related parameters==
Line 38: Line 42:
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"| Thinning
|style="background:LightGrey; color:black"| 20x20mm substrate
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Removal rate: 1-10µm/min
*Removal rate: 400nm/min
*Thickness accuracy: +/- 10 µm
*Thickness accuracy: +/- ? µm
*Thickness homogeneity: +/- 10 µm
*Thickness homogeneity: +/- ? µm
*Roughness: +/- ? µm
*Roughness: +/- ? µm
<!-- |style="background:WhiteSmoke; color:black"|
<!-- |style="background:WhiteSmoke; color:black"|
Line 49: Line 53:
*Performance range 3 -->
*Performance range 3 -->
|-
|-
|style="background:LightGrey; color:black"|Polishing
|style="background:LightGrey; color:black"|100mm substrate
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Removal rate: ~1 µm/min
*Removal rate: ~ 60 nm/min
*Thickness accuracy: ? µm
*Thickness accuracy: ? µm
*Thickness homogeneity: ? µm
*Thickness homogeneity: ? µm

Latest revision as of 15:21, 6 February 2023

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.


Feedback to this page: click here



Polisher (CMP)

The Logitech PM5 Polisher/Lapper in cleanroom A-5

The Logitech Orbis Polisher (CMP) is for polishing wafers (removing material in the nm range) it is not for thinning down wafers or other substrates. After CMP it is recommended to use the Post CMP Cleaner to clean the sample for slurry residues left by the CMP.


The user manual, user APV, technical information and contact information can be found in LabManager:

The Logitech Orbis (CMP) in LabManager

Equipment performance and process related parameters

Equipment Polisher/Lapper
Purpose

Polishing of

  • Silicon
  • SiO2
Performance 20x20mm substrate
  • Removal rate: 400nm/min
  • Thickness accuracy: +/- ? µm
  • Thickness homogeneity: +/- ? µm
  • Roughness: +/- ? µm
100mm substrate
  • Removal rate: ~ 60 nm/min
  • Thickness accuracy: ? µm
  • Thickness homogeneity: ? µm
  • Roughness: +/- ? µm
Process parameter range Polishing liquid
  • SF1 Polishing Fluid
Polishing cloths
  • Chemcloth Polishing Cloths
Rotation
  • Plate
  • Head/Puck
Arm sweep
  • Polishing: 20% (inner) - 100% (outer)
Substrates Sample size
  • one 20x20mm piece
  • one 50 mm wafer
  • one 2" wafer
  • one 100 mm wafer
  • one 150 mm wafer
Allowed materials
  • Silicon
  • Glass/Quartz