Specific Process Knowledge/Back-end processing/Polisher CMP: Difference between revisions

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'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
== Polisher (CMP) ==
 
== Polisher/Lapper ==


[[image:Logitech pm5 1.jpg|400px|right|thumb|The Logitech PM5 Polisher/Lapper]]
[[image:Cmp_picture.jpg|400px|right|thumb|The Logitech PM5 Polisher/Lapper in cleanroom A-5]]


The Logitech Orbis Polisher (CMP) is for polishing wafers (removing material in the nm range) it is not for thinning down wafers or other substrates.
The Logitech Orbis Polisher (CMP) is for polishing wafers (removing material in the nm range) it is not for thinning down wafers or other substrates. After CMP it is recommended to use the '''[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Wafer_cleaning/Post_CMP_Cleaner Post CMP Cleaner]''' to clean the sample for slurry residues left by the CMP.




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<!-- give the link to the equipment info page in LabManager: -->
<!-- give the link to the equipment info page in LabManager: -->
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=299 The Logitech PM5 Polisher/Lapper in LabManager]
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=430 The Logitech Orbis (CMP) in LabManager]
 
==Equipment performance and process related parameters==
 
{| border="2" cellspacing="0" cellpadding="2"
 
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"|<b>Polisher/Lapper</b>
<!-- |style="background:WhiteSmoke; color:black"|<b>Equipment 2</b> -->
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
Polishing of
|style="background:WhiteSmoke; color:black"|
*Silicon
*SiO2
<!-- |style="background:WhiteSmoke; color:black"|
*Purpose 1
*Purpose 2
*Purpose 3 -->
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"| 20x20mm substrate
|style="background:WhiteSmoke; color:black"|
*Removal rate: 400nm/min
*Thickness accuracy: +/- ? µm
*Thickness homogeneity: +/- ? µm
*Roughness: +/- ? µm
<!-- |style="background:WhiteSmoke; color:black"|
*Performance range 1
*Performance range 2
*Performance range 3 -->
|-
|style="background:LightGrey; color:black"|100mm substrate
|style="background:WhiteSmoke; color:black"|
*Removal rate: ~ 60 nm/min
*Thickness accuracy: ? µm
*Thickness homogeneity: ? µm
*Roughness: +/- ? µm
<!-- |style="background:WhiteSmoke; color:black"|
*Performance range -->
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range
|style="background:LightGrey; color:black"|Polishing liquid
|style="background:WhiteSmoke; color:black"|
*SF1 Polishing Fluid
|-
|style="background:LightGrey; color:black"|Polishing cloths
|style="background:WhiteSmoke; color:black"|
*Chemcloth Polishing Cloths
|-
|style="background:LightGrey; color:black"|Rotation
|style="background:WhiteSmoke; color:black"|
*Plate
*Head/Puck
|-
|style="background:LightGrey; color:black"|Arm sweep
|style="background:WhiteSmoke; color:black"|
*Polishing: 20% (inner) - 100% (outer)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Sample size
|style="background:WhiteSmoke; color:black"|
*<nowiki></nowiki> one 20x20mm piece
*one 50 mm wafer
*one 2" wafer
*one 100 mm wafer
*one 150 mm wafer
<!-- |style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers -->
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*Silicon
*Glass/Quartz
<!-- |style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Allowed material 2
*Allowed material 3 -->
|-
|}
 
<br clear="all" />

Latest revision as of 15:21, 6 February 2023

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.


Feedback to this page: click here



Polisher (CMP)

The Logitech PM5 Polisher/Lapper in cleanroom A-5

The Logitech Orbis Polisher (CMP) is for polishing wafers (removing material in the nm range) it is not for thinning down wafers or other substrates. After CMP it is recommended to use the Post CMP Cleaner to clean the sample for slurry residues left by the CMP.


The user manual, user APV, technical information and contact information can be found in LabManager:

The Logitech Orbis (CMP) in LabManager

Equipment performance and process related parameters

Equipment Polisher/Lapper
Purpose

Polishing of

  • Silicon
  • SiO2
Performance 20x20mm substrate
  • Removal rate: 400nm/min
  • Thickness accuracy: +/- ? µm
  • Thickness homogeneity: +/- ? µm
  • Roughness: +/- ? µm
100mm substrate
  • Removal rate: ~ 60 nm/min
  • Thickness accuracy: ? µm
  • Thickness homogeneity: ? µm
  • Roughness: +/- ? µm
Process parameter range Polishing liquid
  • SF1 Polishing Fluid
Polishing cloths
  • Chemcloth Polishing Cloths
Rotation
  • Plate
  • Head/Puck
Arm sweep
  • Polishing: 20% (inner) - 100% (outer)
Substrates Sample size
  • one 20x20mm piece
  • one 50 mm wafer
  • one 2" wafer
  • one 100 mm wafer
  • one 150 mm wafer
Allowed materials
  • Silicon
  • Glass/Quartz


Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Back-end_processing/Polisher_CMP&oldid=44469"