Specific Process Knowledge/Back-end processing/Polishing machine: Difference between revisions

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'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
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== Polisher/Lapper ==
== Polisher/Lapper ==


[[image:Logitech pm5 1.jpg|400px|right|thumb|The Logitech PM5 Polisher/Lapper]]
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<!-- copyright issue rkc [[image:Logitech pm5 1.jpg|400px|right|thumb|The Logitech PM5 Polisher/Lapper]]
The Logitech Orbis Polisher (CMP) is for polishing wafers (removing material in the nm range) it is not for thinning down wafers or other substrates.  
Training is required before using th machine. The machine is equipped with a LabManager lock.-->


The Logitech PM5 Polisher/Lapper is for thinning down wafers and other substrates.


'''The user manual, user APV, technical information and contact information can be found in LabManager:'''  
'''The user manual, user APV, technical information and contact information can be found in LabManager:'''  
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==Equipment performance and process related parameters==
==Equipment performance and process related parameters==


[[File:IMG_20230228_113121.jpg|thumb|350px|PM5 lapper in Fume hood]]
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*Allowed material 3 -->
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[[File:IMG_20230228_113134.jpg|thumb|left|300px|lapping jig]]
[[File:IMG_20230228_113127.jpg|thumb|1000px|mounting/measuring space]]


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Latest revision as of 14:24, 28 February 2023

Feedback to this page: click here

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links Labmanager requires login.

Polisher/Lapper

The Logitech PM5 Polisher/Lapper is for thinning down wafers and other substrates.

The user manual, user APV, technical information and contact information can be found in LabManager:

The Logitech PM5 Polisher/Lapper in LabManager

Equipment performance and process related parameters

PM5 lapper in Fume hood
Equipment Polisher/Lapper
Purpose

Thinning of substrates of

  • InP
  • GaAs
  • Silicon
  • Metals
  • Glass/Quartz
Performance Thinning
  • Removal rate: 1-10µm/min
  • Thickness accuracy: +/- 10 µm
  • Thickness homogeneity: +/- 10 µm
  • Roughness: +/- ? µm
Polishing
  • Removal rate: ~1 µm/min
  • Thickness accuracy: ? µm
  • Thickness homogeneity: ? µm
  • Roughness: +/- ? µm
Process parameter range Polishing liquid
  • Al2O3 (alumina) powder: 3, 9 or 20 µm
  • Chemlox (for polishing)
  • SF1 Polishing Fluid (for polishing e.g. SiO2)
Polishing cloths
  • Chemcloth Polishing Cloths (for use with SF1 liquid)
Rotation speed
  • Thinning: 5-20 rpm
  • Polishing: 5-80 rpm
Arm sweep
  • Thinning: stationary
  • Polishing: 12% (inner) - 80% (outer)
Substrates Batch size
  • # small samples
  • one 50 mm wafer
  • one 100 mm wafer
Allowed materials
  • InP
  • GaAs
  • Silicon
  • Metals
  • Glass/Quartz
lapping jig
mounting/measuring space