Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1: Difference between revisions

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<!--Checked for updates on 24/8-2021. ok/ jmli-->
= XPS analysis of ALD deposited layers =
= XPS analysis of ALD deposited layers =


This section assumes that you are familiar with the basic operations of data processing in Avantage. If not, then press [[Specific Process Knowledge/Characterization/XPS/Processing/Basics|'''HERE''']] and go through this part first.
This section assumes that you are familiar with the basic operations of data processing in Avantage. If not, then press [[Specific Process Knowledge/Characterization/XPS/Processing/Basics|'''HERE''']] and go through this part first.


This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al<sub>2</sub>O<sub>3</sub>, 15 nm of TiO<sub>2</sub> and 16 nm of HfO<sub>2</sub>.
This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al<sub>2</sub>O<sub>3</sub>, 15 nm of TiO<sub>2</sub> and 16 nm of HfO<sub>2</sub>. In the XPS an experiment with three points of analysis has been set up to analyse this sandwiched structure:
# Point: snapshot
## Depth profile: 2keVHigh20secs
### Hf4f Snap
### Al2p Snap
### Si2p Snap
### C1s Snap
### Ti2p Snap
### O1s Snap
# Point: Scanned
## Depth profile: 2keVHigh20secs
### XPS survey
### Hf4f Scan
### Al2p Scan
### Si2p Scan
### C1s Scan
### Ti2p Scan
### O1s Scan
# Point: Extended +20eV end, 0.2 eV step
## Depth profile: 2keVHigh20secs
### XPS survey
### Hf4f Scan
### Al2p Scan
### Si2p Scan
### C1s Scan
### Ti2p Scan
### O1s Scan
 
The three points are distributed in such a way on the sample holder plate as to minimise the redeposition of one depth profile onto another. They serve different purposes:
* The second point labelled 'Scanned' is the slow and time consuming analysis using scanned spectra and includes survey spectra. It will take roughly 7.5 hours to do 35 levels.
* The first point labelled 'snapshot' only records the fast snapshots (no survey) and therefore only takes about 30 minutes. The question is if one can obtain the same information as the scanned version.
* The last point labelled 'Extended +20eV end, 0.2 eV step' is intended to be used for Quases analysis.


== Guidelines on data processing ==
== Guidelines on data processing ==
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==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/1Open|1. Open the experiment and prepare processing grids]] ====
==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/1Open|1. Open the experiment and prepare processing grids]] ====


==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/2Survey|2. Survey spectra procesing]] ====
==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/2Survey|2. Survey spectra processing]] ====
 
==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/3scanned|3. High resolution scan processing]]====

Latest revision as of 15:00, 24 August 2021


XPS analysis of ALD deposited layers

This section assumes that you are familiar with the basic operations of data processing in Avantage. If not, then press HERE and go through this part first.

This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al2O3, 15 nm of TiO2 and 16 nm of HfO2. In the XPS an experiment with three points of analysis has been set up to analyse this sandwiched structure:

  1. Point: snapshot
    1. Depth profile: 2keVHigh20secs
      1. Hf4f Snap
      2. Al2p Snap
      3. Si2p Snap
      4. C1s Snap
      5. Ti2p Snap
      6. O1s Snap
  2. Point: Scanned
    1. Depth profile: 2keVHigh20secs
      1. XPS survey
      2. Hf4f Scan
      3. Al2p Scan
      4. Si2p Scan
      5. C1s Scan
      6. Ti2p Scan
      7. O1s Scan
  3. Point: Extended +20eV end, 0.2 eV step
    1. Depth profile: 2keVHigh20secs
      1. XPS survey
      2. Hf4f Scan
      3. Al2p Scan
      4. Si2p Scan
      5. C1s Scan
      6. Ti2p Scan
      7. O1s Scan

The three points are distributed in such a way on the sample holder plate as to minimise the redeposition of one depth profile onto another. They serve different purposes:

  • The second point labelled 'Scanned' is the slow and time consuming analysis using scanned spectra and includes survey spectra. It will take roughly 7.5 hours to do 35 levels.
  • The first point labelled 'snapshot' only records the fast snapshots (no survey) and therefore only takes about 30 minutes. The question is if one can obtain the same information as the scanned version.
  • The last point labelled 'Extended +20eV end, 0.2 eV step' is intended to be used for Quases analysis.

Guidelines on data processing

Click HERE to see some general guidelines on data processing in Avantage.

How to get the data used in the example below

The wiki does not allow uploading of *.zip data files so the zipped data file has been renamed to a *.xls file. Therefore, do the following:

  1. Download this File:Experiment 2.xls.
  2. Rename the downloaded file Experiment_2.xls to Experiment_2.zip
  3. Extract to a folder on a local drive (right click and select 'Extract all'). Avantage will not work on network drives.

Data processing

1. Open the experiment and prepare processing grids

2. Survey spectra processing

3. High resolution scan processing

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