Specific Process Knowledge/Thin film deposition/Deposition of Niobium: Difference between revisions

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<i> This page is written by <b>DTU Nanolab staff</b></i>


== Deposition of Nb ==
== Deposition of Nb ==
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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|E-beam deposition of Nb
|E-beam deposition of Nb
(line-of-sight deposition)
(line-of-sight deposition)
|Sputter deposition of Nb
(not line-of-sight deposition)
|Sputter deposition of Nb
|Sputter deposition of Nb
(not line-of-sight deposition)
(not line-of-sight deposition)
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!Pre-clean
!Pre-clean
|Ar ion bombardment
|Ar ion bombardment
|RF Ar clean
|RF Ar clean
|RF Ar clean


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!Layer thickness
!Layer thickness
|10Å to 1µm*
|10Å to 200 nm*
|10Å to 1µm**  
|10Å to 600 nm**  
|''ask staff, probably similar to old Lesker sputter system''


|-
|-
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! Deposition rate
! Deposition rate
|0.5Å/s to 3Å/s
|0.5Å/s to 5Å/s
| ~1Å/s
| ~1Å/s
| ? Probably similar to old Lesker sputter system
|-
|-


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*smaller pieces
*smaller pieces
*Up to 1x6" wafers
*Up to 1x6" wafers
|
*Up to 10x4" or 6" wafers
*Many smaller pieces
|-
|-


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* SU-8  
* SU-8  
* Metals  
* Metals  
|
* Almost any that do not outgas.


  |-style="background:WhiteSmoke; color:black"
  |-style="background:WhiteSmoke; color:black"
! Comment
! Comment
| Substrates will get heated during a longer deposition. During a 100 nm deposition at 2 Å/s, the substrate reached about 105 °C.
| Substrates get heated during the deposition.  
For 100 nm Nb at 2 Å/s, the substrate reached about 105 °C.
|
|
|
|}
|}


'''**''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)''
'''*''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''


'''*''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)''
'''**''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''

Latest revision as of 09:33, 9 June 2023

Feedback to this page: click here

This page is written by DTU Nanolab staff

Deposition of Nb

Niobium can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the deposition equipment.

E-beam evaporation (Temescal) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Nb

(line-of-sight deposition)

Sputter deposition of Nb

(not line-of-sight deposition)

Sputter deposition of Nb

(not line-of-sight deposition)

Pre-clean Ar ion bombardment RF Ar clean RF Ar clean
Layer thickness 10Å to 200 nm* 10Å to 600 nm** ask staff, probably similar to old Lesker sputter system
Deposition rate 0.5Å/s to 5Å/s ~1Å/s ? Probably similar to old Lesker sputter system
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller pieces
  • smaller pieces
  • Up to 1x6" wafers
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Almost any that do not outgas.


Comment Substrates get heated during the deposition.

For 100 nm Nb at 2 Å/s, the substrate reached about 105 °C.

* To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)

** To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)

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